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FF200R12KE3 [EUPEC]

IGBT-Module; IGBT -模块

FF200R12KE3


元器件型号：	FF200R12KE3
生产厂家：	EUPEC GMBH
描述和应用：	IGBT-Module IGBT -模块晶体晶体管双极性晶体管栅局域网
PDF文件：	总8页 (文件大小：251K)
下载文档：	下载PDF数据表文档文件
型号参数：FF200R12KE3参数

FF200R12KE4HOSA1

Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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5 INFINEON

FF200R12KE4P

Insulated Gate Bipolar Transistor,

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4 INFINEON

FF200R12KF

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048

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105 ETC

FF200R12KF2

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HD5.6

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58 ETC

FF200R12KL

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048

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27 ETC

FF200R12KS4

62mm C-Series module with the fast IGBT2 for high-frequency switching

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314 INFINEON

FF200R12KS4

Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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31 INFINEON

FF200R12KS4HOSA1

Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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1 INFINEON

FF200R12KT4

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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58 INFINEON

FF200R12KT4HOSA1

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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8 INFINEON

FF200R17KE3

62mm C-series module with trench/fieldstop IGBT and EmCon diode

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107 EUPEC

FF200R17KE3

IGBT-Modules

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229 EUPEC

FF200R17KE3_07

62mm C-series module with trench/fieldstop IGBT and EmCon diode

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12 EUPEC

FF200R17KE3HOSA1

Insulated Gate Bipolar Transistor, 390A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

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3 INFINEON

FF200R17KE4

62mm C-Series module with fast trench/fieldstop IGBT4 and Emitter Controlled 4 diode

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99 INFINEON

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