EFA040A-70 [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET![EFA040A-70](http://pdffile.icpdf.com/pdf1/p00173/img/icpdf/EFA04_972072_icpdf.jpg)
型号: | EFA040A-70 |
厂家: | ![]() |
描述: | Low Distortion GaAs Power FET |
文件: | 总2页 (文件大小:23K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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EFA040A-70
Excelics
DATA SHEET
Low Distortion GaAs Power FET
44
19
•
•
•
•
•
•
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+22.0dBm TYPICAL OUTPUT POWER
8.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
20
4
D
G
S
S
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
20.0
22.0
22.0
8.0
P1dB
dBm
dB
f=18GHz
f=12GHz
f=18GHz
6.5
G1dB
PAE
5.0
%
f=12GHz
33
Idss
Gm
Saturated Drain Current Vds=3V, Vgs=0V
60
45
105
160
-3.5
mA
mS
V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
60
-2.0
-15
Vp
Vds=3V, Ids=1.0 mA
BVgd
BVgs
Rth
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
-10
-6
V
-14
V
250*
oC/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
10V
CONTINUOUS2
Vds
Vgs
Ids
6V
-6V
-4V
Idss
75mA
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
10mA
1.5mA
21dBm
175oC
-65/175oC
@ 3dB Compression
150 oC
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/150 oC
550mW
445mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA040A-70
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
6V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG
1.0 0.971 -30.2
2.0 0.908 -59.1
3.0 0.842 -84.8
4.0 0.782 -109.8
5.0 0.726 -133.4
6.0 0.686 -152.0
7.0 0.652 -172.6
8.0 0.626 167.7
9.0 0.631 140.1
10.0 0.652 117.8
11.0 0.659 103.2
MAG ANG
4.747 154.4
4.348 130.0
3.860 108.4
MAG ANG MAG
ANG
-14.0
-29.1
-42.1
-52.4
-62.1
-74.9
-86.4
-96.6
0.021
0.037
0.047
0.052
0.055
0.055
0.055
0.054
0.057
0.063
0.073
0.083
0.088
72.3 0.714
55.5 0.681
42.9 0.651
33.0 0.626
24.9 0.592
20.6 0.558
16.8 0.543
16.2 0.517
17.8 0.511 -104.6
14.5 0.497 -118.4
9.8 0.485 -137.9
2.8 0.480 -157.0
-6.5 0.463 -173.7
3.516
3.212
2.939
2.687
2.492
2.292
88.8
70.4
53.7
37.1
21.4
4.2
2.096 -12.5
2.002 -28.6
1.899 -45.5
1.706 -61.4
1.513 -76.5
1.400 -94.1
1.269 -113.2
1.103 -126.3
1.043 -138.6
0.928 -155.5
0.854 -171.7
0.801 173.6
0.760 160.1
0.695 142.7
0.633 124.1
0.617 107.6
12.0 0.681
13.0 0.739
14.0 0.776
15.0 0.787
16.0 0.798
17.0 0.789
18.0 0.803
19.0 0.821
86.0
69.3
55.3
41.1
25.7
15.5
7.3
0.091 -16.1 0.465
0.095 -29.4 0.498
0.094 -44.6 0.518
0.092 -50.4 0.516
0.101 -67.9 0.574
0.085 -83.5 0.604
0.080 -98.6 0.657
0.076 -113.9 0.654
0.076 -129.4 0.650
0.075 -147.4 0.629
0.078 -168.0 0.617
0.089 176.3 0.618
0.117 161.8 0.599
168.8
144.8
120.3
105.9
93.1
75.9
59.9
47.1
38.6
20.9
0.1
-7.7
20.0 0.846 -19.7
21.0 0.829 -28.2
22.0 0.795 -39.9
23.0 0.808 -56.6
24.0 0.819 -69.7
25.0 0.756 -84.3
26.0 0.754 -103.8
-14.7
-30.8
0.634
90.8
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