EFA720AV-CP083 [EXCELICS]

Low Distortion GaAs Power FET; 低失真功率的GaAs FET
EFA720AV-CP083
型号: EFA720AV-CP083
厂家: EXCELICS SEMICONDUCTOR, INC.    EXCELICS SEMICONDUCTOR, INC.
描述:

Low Distortion GaAs Power FET
低失真功率的GaAs FET

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EFA720AV-CP083  
UPDATED 01/30/2006  
Low Distortion GaAs Power FET  
FEATURES  
NON-HERMETIC SURFACE MOUNT  
160MIL METAL CERAMIC PACKAGE  
+33.5dBm OUTPUT POWER  
17.0 dB TYPICAL POWER GAIN AT 2 GHz  
0.5x4800 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE  
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH  
RELIABILITY  
All Dimensions in mil  
Tolerance: ± 3 mil  
Caution! ESD sensitive device.  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
SYMBOL  
PARAMETER/TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression  
f = 2.0 GHz  
f = 4.0 GHz  
f = 2.0 GHz  
f = 4.0 GHz  
33.5  
35.5  
35.5  
17.0  
12.0  
P1dB  
dBm  
dB  
Vds = 8 V, Ids=50% Idss  
Gain at 1dB Compression  
Vds = 8 V, Ids=50% Idss  
15.5  
G1dB  
Power Added Efficiency at 1dB Compression  
PAE  
IDSS  
36  
2040  
1100  
-2.0  
-15  
%
Vds = 8 V, Ids=50% Idss  
f = 2.0 GHz  
Saturated Drain Current  
VDS = 3 V, VGS = 0 V  
1200  
840  
2640  
-3.5  
mA  
GM  
Transconductance  
V
V
DS = 3 V, VGS = 0 V  
mS  
V
VP  
Pinch-off Voltage  
DS = 3 V, IDS = 10 mA  
BVGD  
BVGS  
RTH*  
Drain Breakdown Voltage  
Source Breakdown Voltage  
Thermal Resistance  
I
GD = 7.2 mA  
GS = 7.2 mA  
-13  
-7  
V
I
-14  
V
6*  
oC/W  
Notes: * Overall Rth depends on case mounting.  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
Vds  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Forward Gate Current  
Reserve Gate Current  
Input Power  
ABSOLUTE1  
CONTINUOUS2  
8V  
12V  
-5V  
Vgs  
-3V  
Igsf  
32.4 mA  
5.4 mA  
32.5 dBm  
175oC  
-65/175oC  
20 W  
10.8 mA  
1.8 mA  
Igsr  
Pin  
@ 3dB Compression  
175oC  
Tch  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tstg  
Pt  
-65/175oC  
20 W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 1  
Revised January 2006  

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