EIB1415-4P [EXCELICS]

14.40-15.35GHz 4W Internally Matched Power FET; 14.40-15.35GHz 4W内部匹配功率场效应管


型号：	EIB1415-4P
厂家：	EXCELICS SEMICONDUCTOR, INC.
描述：	14.40-15.35GHz 4W Internally Matched Power FET 14.40-15.35GHz 4W内部匹配功率场效应管
文件：	总1页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EIB1415-2P

UPDATED 06/14/06

14.40-15.35GHz 2W Internally Matched Power FET

FEATURES

•

14.40-15.35 GHz Bandwidth

EIB1415-2P

Input/Output Impedance Matched to 50 Ohms

+33.0 dBm Output Power at 1dB Compression

7.5 dB Power Gain at 1dB Compression

24% Power Added Efficiency

-46 dBc IM3 at PO = 22.0 dBm SCL

Non-Hermetic Metal Flange Package

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

Caution! ESD sensitive device.

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

V_DS= 8 V, I_DSQ≈ 800mA

Gain at 1dB Compression

_DS= 8 V, I_DSQ≈ 800mA

Gain Flatness

_DS= 8 V, I_DSQ≈ 800mA

Power Added Efficiency at 1dB Compression

f = 14.40-15.35GHz

32.0

33.0

dBm

6.50

7.50

G_1dB

±0.6

960

∆G

PAE

Id_1dB

V_DS= 8 V, I_DSQ≈ 800mA

f = 14.40-15.35GHz

Drain Current at 1dB Compression

f = 14.40-15.35GHz

850

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 22.0 dBm S.C.L²

-43

-46

dBc

IM3

V_DS= 8 V, I_DSQ≈ 65% IDSS

f = 15.35GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

1360

-2.5

8.0

1700

-3.5

9.0

^oC/W

I_DSS

V_P

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 12 mA

R_TH

Note: 1) Tested with 100 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Drain-Source Voltage

10V

-5

-4V

Vds

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

Vgs

21.6mA

-3.6mA

32.0dBm

175 ^oC

7.2mA

Igsf

-1.2mA

Igsr

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

16W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 1

Revised June 2006

相关型号：