EIB1718A-1P [EXCELICS]

17.3-18.1GHz, 1W Internally Matched Power FET; 17.3-18.1GHz ， 1W内部匹配功率场效应管


型号：	EIB1718A-1P
厂家：	EXCELICS SEMICONDUCTOR, INC.
描述：	17.3-18.1GHz, 1W Internally Matched Power FET 17.3-18.1GHz ， 1W内部匹配功率场效应管
文件：	总1页 (文件大小：26K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EIA/EIB1718A-1P

Excelics

PRELIMINARY DATA SHEET

17.3-18.1GHz, 1W Internally Matched Power FET

•

17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT

IMPEDANCE MATCHED TO 50 OHM

•

EIA FEATURES HIGH PAE( 25% TYPICAL)

EIB FEATURES HIGH IP3(43dBm TYPICAL)

+30.5/+29.5dBm TYPICAL P_1dBOUTPUT POWER FOR

EIA/EIB

•

7.5/6.0dB TYPICAL G_1dBPOWER GAIN FOR EIA/EIB

NON-HERMETIC METAL FLANGE PACKAGE

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

EIA1718A-1P

EIB1718A-1P

SYMBOLS

PARAMETERS/TEST CONDITIONS

UNIT

dBm

MIN

TYP

MAX

MIN

TYP

MAX

Output Power at 1dB Compression f=17.3-18.1GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

30.5

29.0

29.5

P_1dB

G_1dB

PAE

Gain at 1dB Compression

f=17.3-18.1GHz

6.5

7.5

5.5

6.0

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Power Added Efficiency at 1dB compression

f=17.3-18.1GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Drain Current at 1dB Compression

440

425

43*

Id_1dB

IP₃

Output 3^rdOrder Intercept Point

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

f=17.3-18.1GHz

dBm

Saturated Drain Current Vds=3V, Vgs=0V

550

-13

720

760

-1.0

-15

850

-2.5

550

720

360

-2.0

-15

850

-3.5

I_dss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=6mA

G_m

V_p

Drain Breakdown Voltage Igd=2.4mA

BV_gd

Thermal Resistance (Au-Sn Eutectic Attach)

^oC/W

R_th

*Typical –45dBc IM3 at Pout=20dBm/Tone

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

Vds

Vgs

Ids

-3V

Idss

Forward Gate Current

Input Power

90mA

32dBm

175^oC

-65/175^oC

8.5

15mA

Igsf

Tch

Tstg

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

7.1W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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