EMP207 [EXCELICS]
17.0 - 20.0 GHz Power Amplifier MMIC; 17.0 - 20.0 GHz功率放大器MMIC型号: | EMP207 |
厂家: | EXCELICS SEMICONDUCTOR, INC. |
描述: | 17.0 - 20.0 GHz Power Amplifier MMIC |
文件: | 总3页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EMP207
UPDATED 05/08/2008
17.0 – 20.0 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
17 – 20 GHz Operating Frequency Range
27.0dBm Output Power at 1dB Compression
15.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 17dBm
APPLICATIONS
Dimension: 2250um X 1130um
Thickness: 75um ± 13um
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=380mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
17
20
GHz
Output Power at 1dB Gain Compression
Small Signal Gain
P1dB
Gss
25.5
13.0
27.0
15.0
dBm
dB
Output 3rd Order Intermodulation Distortion
OIMD3
Input RL
Output RL
Idss
-40
-10
-10
536
7
-37
-8
dBc
dB
@∆f=10MHz, Each Tone Pout 17dBm
Input Return Loss
Output Return Loss
-7
dB
Saturate Drain Current
Power Supply Voltage
V
DS =3V, VGS =0V
429
-35
644
8
mA
VDD
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
18
oC/W
ºC
Tb
+85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
VALUE
8 V
VGS
-4 V
IDD
Idss
IGSF
Forward Gate Current
Input Power
7.5mA
PIN
@ 3dB compression
150°C
TCH
Channel Temperature
Storage Temperature
Total Power Dissipation
TSTG
PT
-65/150°C
6.3W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2008
EMP207
UPDATED 05/08/2008
17.0 – 20.0 GHz Power Amplifier MMIC
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and
50 ohm line and separate the wires to minimize the mutual inductance.
CHIP OUTLINE
Chip Size 1130 x 2250 microns
Chip Thickness: 75 ± 13 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised May 2008
EMP207
UPDATED 05/08/2008
17.0 – 20.0 GHz Power Amplifier MMIC
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS
SEMICONDUCTOR, INC.
AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
Revised May 2008
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