EM5810A [EXCELLIANCE]

10A 5V/12V Step-Down Converter;


型号：	EM5810A
厂家：	Excelliance MOS
描述：	10A 5V/12V Step-Down Converter
文件：	总10页 (文件大小：367K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EM5810/A

10A 5V/12V Step-Down Converter

General Description

Applications

EM5810/A is a synchronous rectified PWM

controller with a built in high-side power MOSFET

operating with 5V or 12V supply voltage. It

achieves 10A peak output current with excellent

load and line regulation. This device operates at

200/300kHz and provides an optimal level of

integration to reduce size and cost of the power

supply.

ꢀ

Notebook & Netbook

Graphic Cards & MB

Low Voltage Logic Supplies

Pin Configuration

PSOP-8

This part includes internal soft start, internal

compensation networks, over current protection,

under voltage protection, and shutdown function.

This part is available in SOP-8/PSOP-8 package.

LGATE

GND

VCC

BOOT

VIN

PHASE

Ordering Information

Part Number

EM5810GE

EM5810AGE

Package

SOP-8 EP

Frequency

200kHz

300kHz

Typical Application Circuit

Features

ꢀ

Operate from 5V to 12V Voltage Supply

25mΩ Internal Power MOSFET Switch

0.6V V_REFwith 1.5% Accuracy

Voltage Mode PWM Control

200/300kHz Fixed Frequency Oscillator

0% to 80% Duty Cycle

Internal Soft Start

Over Current Protection

Integrated Bootstrap Diode

Adaptive Non-Overlapping Gate Driver

Under Voltage Protection

Over Voltage Protection

2012/10/4

A.7

EM5810/A

Pin Assignment

Pin Name Pin No.

Pin Function

Lower Gate Driver Output. Connect this pin to the gate of lower MOSFET. This pin

is monitored by the adaptive shoot-through protection circuitry to determine when

the lower MOSFET has turn off.

LGATE

VCC

Bias Supply Voltage. This pin provides the bias supply for the EM5810/A and the

lower gate driver. The supply voltage is internally regulated to 5VDD for internal

control circuit. Connect a well-decoupled 4.5V to 13.2V supply voltage to this pin.

Ensure that a decoupling capacitor is placed near the IC.

Feedback Voltage. This pin is the inverting input to the error amplifier. A resistor

divider from the output to GND is used to set the regulation voltage.

Enable Pin. Pulling this pin lower than 0.3V disables the controller and causes the

oscillator to stop.

PHASE Switch Node. Connect this pin to the drain of the low-side MOSFET. This pin

is used as the source for the high-side MOSFET, and to monitor the voltage drop

across the low-side MOSFET for over current protection. This pin is also monitored

by the adaptive shoot-through protection circuitry to determine when the high-side

MOSFET has turned off. A Schottky diode between this pin and ground is

recommended to reduce negative transient voltage which is common in a power

supply system.

PHASE

VIN

Input Supply Voltage. This supplies power to the high-side MOSFET.

Bootstrap Supply for the floating upper gate driver. Connect the bootstrap

capacitor C _BOOTbetween BOOT pin and the PHASE pin to form a bootstrap circuit.

The bootstrap capacitor provides the charge to turn on the upper MOSFET. Typical

values for C _BOOTrange from 0.1uF to 0.47uF. Ensure that C _BOOTis placed near the

IC.

BOOT

Signal and Power Ground for the IC. All voltages levels are measured with respect

to this pin. Tie this pin to the ground island/plane through the lowest impedance

connection available.

GND

2012/10/4

A.7

EM5810/A

Function Block Diagram

VCC

BOOT

Internal

regulator

VIꢀ

Soft Start

POR

PHASE

OTP

Gate

control

logic

PWM

V_OCP

Vref

Ramp

VCC

17V

Oscillator

LGATE

65% Vref

Eꢀ

GꢀD

ꢀC

Enable

0.3V

130% Vref

2012/10/4

A.7

EM5810/A

Absolute Maximum Ratings _{(Note 1)}

ꢀ Supply voltage, VCC---------------------------------------------------------------- -0.3V to 16V

ꢀ Supply voltage, VIN---------------------------------------------------------------- -0.3V to 16V

ꢀ PHASE to GND

DC-------------------------------------------------------------------------------------- -5V to 16V

<200ns-------------------------------------------------------------------------------- -10V to 32V

ꢀ BOOT to PHASE--------------------------------------------------------------------- 16V

ꢀ BOOT to GND

DC-------------------------------------------------------------------------------------- -0.3V to PHASE+16V

<200ns-------------------------------------------------------------------------------- -0.3V to 42V

ꢀ LGATE

DC-------------------------------------------------------------------------------

<200ns-------------------------------------------------------------------------

-0.3V to VCC + 0.3V

-5V to VCC+5V

ꢀ EN & FB------------------------------------------------------------------------------- -0.3V to 6V

ꢀ Power Dissipation, PD @ TA = 25°C,

PSOP-8 ------------------------------------------------------------------------------- 1.33W

ꢀ Package Thermal Resistance, Θ_{JA(Note 2)}

PSOP-8 ------------------------------------------------------------------------------- 75°C/W

ꢀ Junction Temperature------------------------------------------------------------- 150°C

ꢀ Lead Temperature (Soldering, 10 sec.)---------------------------------------- 260°C

ꢀ Storage Temperature Range----------------------------------------------------- -65°C to 150°C

ꢀ ESD susceptibility (Note3)

HBM (Human Body Mode)------------------------------------------------------- 2KV

MM (Machine Mode)-------------------------------------------------------------- 200V

Recommended Operating Conditions _(Note4)

ꢀ Supply Voltage, V_CC------------------------------------------------------------ 4.5V to 13.2V

ꢀ Supply Voltage, V_IN------------------------------------------------------------ 2.5V to 13.2V

ꢀ Junction Temperature ------------------------------------------------------- -40°C to 125°C

ꢀ Ambient Temperature ------------------------------------------------------ -40°C to 85°C

Electrical Characteristics

V_CC=12V, T_A=25℃, unless otherwise specified

Parameter

V_CCSupply Section

Symbol

Test Conditions

Min Typ

Max Units

V_CCSupply Voltage

V_CC

4.5

13.2

4.4

Supply Current

I_CC

I_CCQ

LGATE open, Switching.

No Switching.

Quiescent Supply Current

V_CCPower on Reset Threshold

V_CCPower on Reset Hysteresis

V_INSupply Section

V_CCRTH

V_CCHYS

4.2

0.2

V_INPower on Reset Threshold

V_INTH

1.5

2012/10/4

A.7

EM5810/A

Internal Oscillator

EM5810

170 200 230

KHz

V_p-p

Free Running Frequency

F_SW

EM5810A

255 300 345

Ramp Amplitude

△V_OSC

Error Amplifier

Open Loop DC Gain

Gain-Bandwidth Product

Slew Rate

A_O

Guaranteed by Design

GBW

MHz

V/us

Trans-conductance

PWM Controller Gate Drivers

g_m

0.2

0.7

Lower Gate Sourcing Current

Lower Gate Sinking Current

Lower Gate R_DS(ON)Sinking

PHASE Falling to LGATE Rising

Delay

I_{LG_SRC}

I_{LG_SNK}

R_{LG_SNK}

V_CC– V_LGATE= 6V

V_LGATE= 6V

-1

1.5

V_LGATE= 0.1V

V_CC= 12V; V_PHASE< 1.2V to V_LGATE

1.2V

LGATE Falling to PHASE Rising

Delay

V_CC= 12V; V_LGATE< 1.2V to V_PHASE

1.2V

High-Side MOSFET

EM5810G/EM5810AG ,V_CC= 12V

EM5810GE/EM5810AGE,V_CC= 12V

mΩ

RDS(ON)

Switch ON Resistance

Reference Voltage

Nominal Feedback Voltage

Enable Voltage

V_FB

V_EN

0.591 0.6 0.609

0.3 0.35

EN Enable Threshold

Protection section

FB Under Voltage Protection

FB Over Voltage Protection

VCC Over Voltage Protection

Over Current Threshold

Soft-Start Interval

V_{FB_UVP}FB falling

115 130 145

16 17 18

-425 -375 -325

2.4 3.6 5.4

150 165

V_{FB_OVP}FB rising

V_{CC_OVP}

V_OCP

T_SS

℃

Temperature Shutdown

T_SD

Guaranteed by Design

Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for

stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended

periods may remain possibility to affect device reliability.

Note 2.

θ_JAis measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of

JEDEC 51-3 thermal measurement standard.

Note 3. Devices are ESD sensitive. Handling precaution is recommended.

Note 4. The device is not guaranteed to function outside its operating conditions.

2012/10/4

A.7

EM5810/A

Typical Operating Characteristics

Power On Waveform

Turn On from EN

V_IN

V_EN

V_OUT

LGATE

I_Lx

LGATE

I_Lx

V_IN=12V，V_OUT=1.5V，C_OUT=1000uF，No Load. V_IN=12V，V_OUT=1.5V，C_OUT=1000uF，No Load.

Turn Off from EN

Load Transient Response (Turn on)

I_OUT

V_EN

V_OUT

PHASE

LGATE

I_Lx

V_IN=12V，V_OUT=1.5V，C_OUT=1000uF，I_OUT=8A. V_IN=12V，V_OUT=1.5V，C_OUT=1000uF，Load=0~9A

Load Transient Response (Turn off)

Over Current Protection

PHASE

V_OUT

I_OUT

V_OUT

PHASE

I_OUT

V_IN=12V，V_OUT=1.5V，C_OUT=1000uF，

Load=0~9A

V_IN=12V, V_OUT=1.5, C_OUT=1000uF.

Output Short Ground

2012/10/4

A.7

EM5810/A

Over Current Protection

PHASE

V_OUT

I_OUT

V_IN=12V, V_OUT=1.5, C_OUT=1000uF.

Turn On to Short Circuit

2012/10/4

A.7

EM5810/A

the controller and latch.

Functional Description

EM5810/A is a voltage mode synchronous buck

PWM controller. The compensation circuit is

implemented internally to minimize the external

component count. This device provides complete

protection function such as over current protection,

under voltage protection and over voltage

protection.

UVP, Under Voltage Protection

The FB voltage is monitored for under voltage

protection. The UVP threshold is typical 0.4V.

When UVP is triggered, EM5810/A will shut down

the converter and cycles the soft start function in a

hiccup mode.

Supply Voltage

The V_CCpin provides the bias supply of EM5810/A

control circuit, as well as lower MOSFET’s gate and

the BOOT voltage for the upper MOSFET’s gate. A

minimum 0.1uF ceramic capacitor is recommended

to bypass the supply voltage.

OVP, Over Voltage Protection

The FB voltage is monitored for over voltage

protection. The OVP threshold is typical 0.8V.

When OVP is triggered, EM5810/A will turn off

upper MOSFET and turn on lower MOSFET.

Power ON Reset

To let EM5810/A start to operation, V_CCvoltage

must be higher than its POR voltage even when EN

voltage is pulled higher than enable high voltage.

Typical POR voltage is 4.2V.

Output Inductor Selection

The output inductor is selected to meet the output

voltage ripple requirements and minimize the

response time to the load transient. The inductor

value determines the current ripple and voltage

ripple. The ripple current is approximately the

following equation:

Enable

To let EM5810/A start to operation, EN voltage

must be higher than its enable voltage. Typical

enable voltage is 0.3V.

V − V_OUT

V_OUT

ΔI_L=

∗

V *F

Soft Start

EM5810/A provides soft start function internally.

The FB voltage will track the internal soft start

signal, which ramps up from zero during soft start

period.

Output Capacitor Selection

An output capacitor is required to filter the output

and supply the load transient. The selection of

output capacitor depends on the output ripple

voltage. The output ripple voltage is approximately

bounded by the following equation:

OCP, Over Current Protection

The over current function protects the converter

from a shorted output by using lower MOSFET’s

on-resistance to monitor the current. The OCP level

can be calculated as the following equation:

ΔV_OUT= ΔI_L*(ESR +

)

8*F * C_OUT

V_OCP

I_OCP= −

R_DS(ON)

When OCP is triggered, EM5810/A will shut down

the converter and cycles the soft start function in a

hiccup mode. If over current condition still exist

after 3 times of hiccup, EM5810/A will shut down

2012/10/4

A.7

EM5810/A

Input Capacitor Selection

Power MOSFET Selection

Use a mix of input bypass capacitors to control the

voltage overshoot across the MOSFET. Use small

ceramic capacitors for high frequency decoupling

and bulk capacitors to supply the current needed

each time the upper MOSFET turn on. Place the

small ceramic capacitors physically close to the

MOSFETs and between the drain of the upper

MOSFET and the source of the lower MOSFET. The

important parameters of the input capacitor are

the voltage rating and the RMS current rating.

The capacitor voltage rating should be at least 1.25

times greater than the maximum input voltage and

a voltage rating of 1.5 times is a conservative

guideline. The RMS current rating requirement can

be expressed as the following equation:

The EM5810/A requires a low-side N-Channel

power MOSFETs. These should be selected based

upon on-resistance, breakdown voltage, gate

supply requirement, and thermal management

requirements.

In high current applications, the MOSFET power

dissipation, package selection and heat sink are the

dominate design factor. The power dissipation

includes two loss components: conduction loss and

switching loss. The conduction losses are the

largest component of power dissipation for both

the upper and lower MOSFETs. These losses are

distributed between the two MOSFETs according

to duty factor.

The power dissipations in the two MOSFETs are

approximately the following equation:

I_RMS= I_OUTD(1 -D)

PD_UPPER= I²_OUT*R_DS(ON)*D + 0.5*I_OUT*V *F *t_SW

For a through hole design, several electrolytic

capacitors may be needed. For surface mount

designs, solid tantalum capacitors can also be used

but caution must be exercised with regard to the

capacitor surge current rating. These capacitors

must be capable of handling the surge current at

power-up. Some capacitor series available from

reputable manufacturers are surge current tested.

PD_LOWER= I²_OUT*R_DS(ON)*(1 - D)

Where D is the duty cycle, t_SWis the combined

switch ON and OFF time.

2012/10/4

A.7

EM5810/A

Ordering & Marking Information

Device Name: EM5810GE for SOP-8 EP

5810

ABCDEFG

EM5810GE Device Name

ABCDEFG: Date Code

Device Name: EM5810AGE for SOP-8 EP

5810A

EM5810AGE Device Name

ABCDEFG: Date Code

ABCDEFG

Outline Drawing

SOP-8 EP

Dimension in mm

Dimension

Min.

4.70 3.70

5.80

0.33

1.20 0.08 0.40 0.19 0.25

3.2

2.21

0∘

Typ.

1.27

Max.

5.10 4.10

6.20

0.51

1.62 0.28 0.83 0.26 0.50

3.6

2.61

8∘

2012/10/4

A.7

EM5810A [EXCELLIANCE]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E