1N485B [FAIRCHILD]
Small Signal Diode; 小信号二极管型号: | 1N485B |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Diode |
文件: | 总2页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N485B
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
200
200
V
Average Rectified Forward Current
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
4.0
A
A
Pulse Width = 1.0 microsecond
Storage Temperature Range
-65 to +200
°C
Tstg
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
500
300
mW
RθJA
C/W
°
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
VR
VF
IR
Breakdown Voltage
200
V
IR = 5 µA
Forward Voltage
Reverse Current
IF = 100 mA
1.0
V
VR = 175 V
VR = 175 V, TA = 150°C
25
5
nA
µA
2003 Fairchild Semiconductor Corporation
1N485B, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
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changes at any time without notice in order to improve
designꢀ
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Obsolete
Full Production
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The datasheet is printed for reference information onlyꢀ
Revꢀ I2
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