2502P [FAIRCHILD]

Dual P-Channel 2.5V Specified PowerTrench MOSFET; 双P沟道2.5V指定的PowerTrench MOSFET


型号：	2502P
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Dual P-Channel 2.5V Specified PowerTrench MOSFET 双P沟道2.5V指定的PowerTrench MOSFET
文件：	总5页 (文件大小：145K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

December 2003

FDW2502P



Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild's Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V –12V).

• –4.4 A, –20 V. R_DS(ON)= 35 mΩ @ V_GS= –4.5 V

R_DS(ON)= 57 mΩ @ V_GS= –2.5 V.

• Extended V_GSSrange (±12V) for battery applications.

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Load switch

• Low profile TSSOP-8 package.

• Motor drive

• DC/DC conversion

• Power management

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

–20

Units

V_DSS

Drain-Source Voltage

V_GSS

Gate-Source Voltage

±12

–4.4

–30

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

125

208

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2502P

FDW2502P

13’’

12mm

3000 units

FDW2502P Rev. F (W)

2003 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

–20

V_GS= 0 V, I_D= –250 µA

∆BVDSS

Breakdown Voltage Temperature

–14

I_D= –250 µA, Referenced to 25°C

V_DS= –16 V, V_GS= 0 V

mV/°C

Coefficient

∆T_J

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate–Body Leakage

–1

±100

µA

V_GS= ±12 V,

V_DS= 0 V

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

–0.4 –0.9

3.2

–1.5

V_DS= V_GS, I_D= –250 µA

∆VGS(th)

Gate Threshold Voltage

I_D= –250 µA, Referenced to 25°C

mV/°C

Temperature Coefficient

∆T_J

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= –4.5 V,

I_D= –4.4 A

mΩ

V_GS= –4.5 V, I_D= –4.4 ,T_J=125°C

V_GS= –2.5 V,

V_GS= –4.5 V,

I_D= –3.3 A

V_DS= –5 V

I_D(on)

g_FS

On–State Drain Current

Forward Transconductance

–30

V_DS= –5 V,

I_D= –4.4 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

1465

310

155

7.7

Ω

_DS= –10 V,

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1.0 MHz

R_G

V_GS= 15 mV, f = 1.0 MHz

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

V_DD= –10 V,

V_GS= –4.5 V,

I_D= –1 A,

R_GEN= 6 Ω

V_DS= –5 V,

V_GS= –5 V

I_D= –4.4 A,

Q_g

Total Gate Charge

Q_gs

Q_gd

Gate–Source Charge

Gate–Drain Charge

2.9

3.5

Drain–Source Diode Characteristics and Maximum Ratings

t_rr

Q_rr

I_S

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I_F= –4.4 A,

8.1

d_iF/d_t= 100 A/µs

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward

–0.83

–1.2

V_SD

V_GS= 0 V, I_S= –0.83 A (Note 2)

–0.7

Voltage

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

_θJAis 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.

_θJAis 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDW2502P Rev. F (W)

Typical Characteristics

2.2

V_GS= -4.5V

-3.5V

-3.0V

V_GS= - 2.0V

-2.5V

1.8

1.6

1.4

1.2

-2.5V

-2.0V

-3.0V

-3.5V

-4.0V

-4.5V

0.8

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

1.3

1.2

1.1

0.09

I_D= -2.2A

I_D= -4.4A

_GS= - 4.5V

0.07

0.05

0.03

0.01

T_A= 125^oC

T_A= 25^oC

0.9

0.8

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

V_GS= 0V

V_DS= -5V

T_A= -55^oC

125^oC

T_A= 125^oC

0.1

25^oC

-55^oC

0.01

0.001

0.0001

0.5

1.5

2.5

0.2

0.4

0.6

0.8

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDW2502P Rev. F (W)

Typical Characteristics

2000

1600

1200

800

400

f = 1 MHz

V_GS= 0 V

I_D= -4.4A

V_DS= -5V

C_iss

-15V

-10V

C_oss

C_rss

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

R_DS(ON)LIMIT

SINGLE PULSE

R_θ_JA= 208°C/W

100 s

_A= 25°C

1ms

10ms

100ms

10s

V_GS= -4.5V

SINGLE PULSE

R_θ_JA= 208^oC/W

0.1

0.01

T_A= 25^oC

0.0001 0.001

0.01

0.1

100

1000

0.1

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

_θJA(t) = r(t) * R_θJA

_θJA= 208^oC/W

0.2

0.1

0.05

P(pk)

0.02

0.01

t₁

t₂

_J- T_A= P * R_θJA(t)

0.01

SINGLE PULSE

Duty Cycle, D = t₁/ t₂

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.

Transient thermal response will change depending on the circuit board design.

FDW2502P Rev. F (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

POP™

SuperFET™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

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EnSigna^TM

FACT™

Power247™

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SuperSOT™-3

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SyncFET™

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GlobalOptoisolator™

GTO™

Quiet Series™

RapidConfigure™

RapidConnect™

TINYOPTO™

TruTranslation™

UHC™

HiSeC™

I²C™

SILENT SWITCHER UltraFET

ImpliedDisconnect™

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Across the board. Around the world.™

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I7

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