2N339 [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器型号: | 2N339 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | NPN General Purpose Amplifier |
文件: | 总2页 (文件大小:28K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
2N3390
2N3391
2N3391A
2N3392
2N3393
TO-92
B
C
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
25
25
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
-55 to +150
C
TJ, T
stg
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3390 / 3391/A / 3392 / 3393
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
1997 Fairchild Semiconductor Corporation
3390-93, Rev B
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
IC = 10 mA, IB = 0
C = 10 µA, IE = 0
25
V
V(BR)CBO
V(BR)EBO
ICBO
25
V
V
I
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
5.0
IE = 10 µA, IC = 0
VCB = 18 V, IE = 0
VEB = 5.0 V, IC = 0
100
100
nA
nA
IEBO
Emitter-Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 4.5 V, IC = 2.0 mA
400
250
150
90
800
500
300
180
2N3390
2N3391/A
2N3392
2N3393
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 10 V, f = 1.0 MHz
IC = 2.0 mA, VCE = 4.5 V,
f = 1.0 kHz 2N3390
2.0
10
pF
dB
Cob
Small-Signal Current Gain
hfe
400
250
150
90
1250
800
500
400
2N3391/A
2N3392
2N3393
NF
Noise Figure
V
CE = 4.5 V, IC = 100 µA,
5.0
RG = 500 Ω, 2N3391A only
BW = 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
相关型号:
2N3390
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92B, 3 PIN
MICRO-ELECTRO
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