4N31SR2M [FAIRCHILD]
Darlington Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT PACKAGE-6;
| 型号： | 4N31SR2M |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Darlington Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT PACKAGE-6 输出元件 光电 |
| 文件： | 总16页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2007
4N29, 4N30, 4N31, 4N32, 4N33
tm
General Purpose 6-Pin Photodarlington Optocoupler
Features
Description
■ High sensitivity to low input drive current
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
■ Meets or exceeds all JEDEC Registered
Specifications
■ VDE 0884 approval available as a test option
– add option .300. (e.g., 4N29.300)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Packages
Schematic
White Package (-M Suffix)
ANODE 1
6 BASE
6
6
1
1
CATHODE
N/C
COLLECTOR
2
3
5
4
6
1
EMITTER
Black Package (No -M Suffix)
6
6
1
1
6
1
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C Unless otherwise specified.)
A
Symbol
Parameter
Device
Value
Units
°C
TOTAL DEVICE
T
Storage Temperature
Non M
M
-55 to +150
-40 to +150
-55 to +100
-40 to +100
260 for 10 sec
250
STG
T
Operating Temperature
Lead Solder Temperature
Non M
M
°C
OPR
T
All
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
All
mW
D
A
Derate above 25°C
3.3
mW/°C
EMITTER
I
Continuous Forward Current
Reverse Voltage
All
All
All
All
80
3
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3.0
150
2.0
A
F
P
LED Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
All
All
All
All
30
30
V
V
CEO
CBO
ECO
5
V
P
Detector Power Dissipation @ T = 25°C
150
2.0
150
mW
mW/°C
mA
D
A
Derate above 25°C
I
Continuous Collector Current
All
C
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Input Forward Voltage*
Reverse Leakage Current*
Capacitance*
I = 10mA
–
–
–
1.2
0.001
150
1.5
100
–
V
F
F
I
V = 3.0V
µA
pF
R
R
C
V = 0V, f = 1.0MHz
F
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage* I = 1.0mA, I = 0
30
30
5.0
–
60
100
8
–
–
V
V
CEO
CBO
ECO
C
B
Collector-Base Breakdown Voltage*
I = 100µA, I = 0
C E
Emitter-Collector Breakdown Voltage* I = 100µA, I = 0
–
V
E
B
I
Collector-Emitter Dark Current*
DC Current Gain
V
= 10V, Base Open
1
100
–
nA
CEO
CE
CE
h
V
= 5.0V, I = 500µA
–
5000
FE
C
Transfer Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS
(1, 2)
I
Collector Output Current*
4N32, 4N33
I = 10mA, V = 10V, I = 0
F CE B
C(CTR)
50 (500)
10 (100)
5 (50)
–
–
–
–
–
–
mA (%)
4N29, 4N30
4N31
(2)
V
Saturation Voltage*
I = 8mA, I = 2.0mA
F C
CE(SAT)
4N29, 4N30, 4N32, 4N33
4N31
–
–
–
–
1.0
1.2
V
AC CHARACTERISTICS
t
Turn-on Time
I = 200mA, I = 50mA,
–
–
5.0
µS
on
F
C
V
= 10V
CC
t
Turn-off Time
off
–
–
–
4N32, 4N33
I = 200mA, I = 50mA,
–
–
100
40
–
µS
F
C
V
= 10V
CC
4N29, 4N30, 4N31
(3, 4)
BW
30
kHz
Bandwidth
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ. Max.
Units
(5)
V
Input-Output Isolation Voltage
ISO
4N29, 4N30, 4N31, 4N32, 4N33
I
≤ 1µA, Vrms, t = 1min.
5300
2500
1500
–
–
–
–
–
–
–
–
–
Vac(rms)
V
I-O
4N32*
4N33*
VDC
VDC
(5)
11
R
C
Isolation Resistance
V
= 500VDC
10
0.8
Ω
ISO
I-O
(5)
Isolation Capacitance
V
= Ø, f = 1MHz
–
pF
ISO
I-O
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current with V @ 10V.
C F
CE
2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .
4. I adjusted to I = 2.0mA and I = 0.7mA rms.
F
C
C
5. The frequency at which I is 3dB down from the 1kHz value.
C
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
3
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
(Black Package)
Fig. 2 LED Forward Voltage vs. Forward Current
(White Package)
1.8
1.7
1.6
1.5
1.4
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
T
T
T
= -55°C
= 25°C
= 100°C
A
A
T
= -55°C
A
1.3
1.2
1.1
1.0
T
T
= 25°C
A
A
= 100°C
A
1
10
100
1
10
100
I
- LED FORWARD CURRENT (mA)
I - LED FORWARD CURRENT (mA)
F
F
Fig.3 Normalized CTR vs. Forward Current
(Black Package)
Fig.4 Normalized CTR vs. Forward Current
(White Package)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0V
V
T
= 5.0V
CE
Normalized to
= 10 mA
Normalized to
I = 10 mA
F
CE
= 25°C
= 25°C
I
F
A
A
0
5
I
10
15
20
0
2
4
6
8
10
12
14
16
18
20
- FORWARD CURRENT (mA)
I - FORWARD CURRENT (mA)
F
F
Fig. 5 Normalized CTR vs. Ambient Temperature
(Black Package)
Fig. 6 Normalized CTR vs. Ambient Temperature
(White Package)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.4
1.2
1.0
0.8
0.6
0.4
I = 5 mA
F
I
= 5 mA
F
I
= 10 mA
F
I
= 10 mA
F
I
= 20 mA
F
Normalized to
= 10 mA
Normalized to
= 10 mA
I
I
= 20 mA
F
F
I
F
T
A
= 25°C
T
A
= 25°C
-75
-50
-25
0
25
50
75
100
125
-60
-40
-20
0
20
40
60
80
100
T
- AMBIENT TEMPERATURE (°C)
T - AMBIENT TEMPERATURE (°C)
A
A
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
4
Typical Performance Curves (Continued)
Fig. 8 CTR vs. RBE (Unsaturated)
(White Package)
Fig. 7 CTR vs. RBE (Unsaturated)
(Black Package)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.9
I
= 20 mA
F
V
= 5.0 V
CE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 10 mA
F
I
I
= 20 mA
= 10 mA
F
F
I
= 5 mA
F
I
= 5 mA
F
V
= 5.0 V
CE
10
100
1000
10
100
1000
R
- BASE RESISTANCE (kΩ)
R
BE
- BASE RESISTANCE (kΩ)
BE
Fig. 9 CTR vs. RBE (Saturated)
(Black Package)
Fig. 10 CTR vs. RBE (Saturated)
(White Package)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 0.3 V
CE
V
= 0.3 V
CE
I
I
= 20 mA
= 10 mA
F
I
= 20 mA
= 10 mA
F
F
I
F
I
= 5 mA
F
I
= 5 mA
F
10
100
1000
10
100
1000
R
- BASE RESISTANCE (k Ω)
R
BE
- BASE RESISTANCE (k Ω)
BE
Fig. 12 Collector-Emitter Saturation Voltage vs Collector Current
(White Package)
Fig. 11 Collector-Emitter Saturation Voltage vs Collector Current
(Black Package)
100
10
1
100
T
= 25˚C
A
10
1
I
= 2.5 mA
I = 2.5 mA
F
F
0.1
0.01
0.1
I
= 20 mA
F
I
= 10 mA
F
I
= 20 mA
F
0.01
I
= 5 mA
0.1
F
I
= 5 mA
F
I
= 10 mA
F
T
= 25˚C
A
0.001
0.001
0.01
1
10
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
I
- COLLECTOR CURRENT (mA)
C
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
Fig. 14 Switching Speed vs. Load Resistor
(White Package)
Fig. 13 Switching Speed vs. Load Resistor
(Black Package)
1000
100
10
1000
I
V
T
= 10 mA
= 10 V
I
V
T
= 10 mA
= 10 V
F
F
CC
CC
= 25°C
= 25°C
A
A
100
10
1
T
off
T
off
T
T
f
f
T
on
r
T
on
1
T
T
r
0.1
0.1
0.1
1
10
100
0.1
1
10
100
R-LOAD RESISTOR (kΩ)
R-LOAD RESISTOR (kΩ)
Fig. 15 Normalized t vs. R
on
Fig. 16 Normalized t vs. R
on
BE
BE
(Black Package)
(White Package)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
10 V
= 2 mA
= 100 Ω
V
I
10 V
= 2 mA
= 100 Ω
CC =
CC =
I
C
L
C
R
R
L
10
100
R
1000
10000
100000
10
100
R
1000
10000
100000
- BASE RESISTANCE (k Ω)
- BASE RESISTANCE (k Ω)
BE
BE
Fig. 17 Normalized t vs. R
off
Fig. 18 Normalized t vs. R
off
BE
BE
(Black Package)
(White Package)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
10 V
= 2 mA
= 100 Ω
V
10 V
CC =
= 2 mA
= 100 Ω
CC =
I
I
C
L
C
L
R
R
10
100
1000
10000
100000
10
100
1000
10000
100000
R
BE
- BASE RESISTANCE (k Ω)
R
BE
- BASE RESISTANCE (k Ω)
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
6
Typical Performance Curves (Continued)
Fig. 19 Dark Current vs. Ambient Temperature
10000
1000
100
10
V
T
= 10 V
CE
A
= 25°
C
1
0.1
0.01
0.001
0
20
40
60
80
100
T
- AMBIENT TEMPERATURE (°C)
A
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
I
I
Adjust
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 20. Switching Time Test Circuit and Waveforms
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
7
Black Package (No -M Suffix)
Package Dimensions (Through Hole)
Package Dimensions (Surface Mount)
PIN 1
ID.
0.350 (8.89)
0.320 (8.13)
0.270 (6.86)
0.240 (6.10)
Pin 1 ID
0.390 (9.90)
0.332 (8.43)
0.260 (6.60)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.92)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.020 (0.51)
0.154 (3.90)
0.100 (2.54)
MIN
0.016 (0.40)
0.008 (0.20)
0.300 (7.62)
0.022 (0.56)
0.016 (0.41)
0.025 (0.63)
0.020 (0.51)
0° to 15°
TYP
0.100 [2.54]
0.035 (0.88)
0.012 (0.30)
0.100 (2.54)
TYP
0.020 (0.50)
0.016 (0.41)
Package Dimensions (0.4” Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
PIN 1 ID
0.070 (1.78)
0.270 (6.86)
0.240 (6.10)
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.415 (10.54)
0.100 (2.54)
0.295 (7.49)
0.070 (1.78)
0.045 (1.14)
0.030 (0.76)
0.200 (5.08)
0.135 (3.43)
0.154 (3.90)
0.100 (2.54)
0.016 (0.40)
0.008 (0.20)
0.004 (0.10)
MIN
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.400 (10.16)
TYP
0.100 (2.54) TYP
Note:
All dimensions are in inches (millimeters).
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
8
White Package (-M Suffix)
Package Dimensions (Through Hole)
Package Dimensions (Surface Mount)
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
Pin 1 ID
0.390 (9.90)
0.332 (8.43)
0.260 (6.60)
0.240 (6.10)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.025 (0.63)
0.020 (0.51)
0.100 (2.54)
0.015 (0.38)
0.100 [2.54]
0.035 (0.88)
0.006 (0.16)
0.020 (0.50)
0.016 (0.41)
0.020 (0.50)
0.016 (0.41)
15°
0.100 (2.54)
0.012 (0.30)
Package Dimensions (0.4” Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
0.070 (1.78)
0.260 (6.60)
0.240 (6.10)
0.060 (1.52)
0.070 (1.77)
0.040 (1.02)
0.415 (10.54)
0.100 (2.54)
0.295 (7.49)
0.014 (0.36)
0.010 (0.25)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
0.008 (0.21)
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters).
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
9
Ordering Information
Black Package
(No Suffix)
White Package
(-M Suffix)
Example
Example
Option
No Suffix
.S
4N32
4N32S
No Suffix
4N32M
Standard Through Hole Device
Surface Mount Lead Bend
S
SR2
T
4N32SM
.SD
4N32SD
4N32W
4N32SR2M Surface Mount; Tape and reel
.W
4N32TM
4N32VM
0.4" Lead Spacing
.300
.300W
.3S
4N32300
4N32300W
4N323S
4N323SD
V
VDE 0884
TV
4N32TVM
4N32SVM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
SV
SR2V
.3SD
4N32SR2VM VDE 0884, Surface Mount, Tape & Reel
Marking Information
1
2
1
2
4N29
V XX YY K
4N29
6
6
V X YY Q
5
3
4
5
3
4
Black Package, No Suffix
White Package, -M Suffix
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
One or two digit year code
4
• Two digits for black package parts, e.g., ‘07’
• One digit for white package parts, e.g., ‘7’
5
6
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts built in the white package (M suffix) that do not have the ‘V’ option (see
definition 3 above) that are marked with date code ‘325’ or earlier are marked in the
portrait format.
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
10
Tape Dimensions
Black Package, No Suffix
12.0 0.1
4.0 0.1
4.85 0.20
Ø1.55 0.05
1.75 0.10
4.0 0.1
0.30 0.05
7.5 0.1
16.0 0.3
9.55 0.20
13.2 0.2
Ø1.6 0.1
10.30 0.20
User Direction of Feed
0.1 MAX
White Package, -M Suffix
12.0 0.1
2.0 0.05
4.5 0.20
Ø1.5 MIN
1.75 0.10
4.0 0.1
0.30 0.05
11.5 1.0
24.0 0.3
9.1 0.20
21.0 0.1
Ø1.5 0.1/-0
10.1 0.20
User Direction of Feed
0.1 MAX
Note:
All dimensions are in millimeters.
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
11
Reflow Soldering Profile
Black Package, No Suffix
300
250
215°C, 10–30 s
225 C peak
200
150
Time above 183°C, 60–150 sec
Ramp up = 3C/sec
100
50
0
• Peak reflow temperature: 225°C (package surface temperature)
• Time of temperature higher than 183°C for 60–150 seconds
• One time soldering reflow is recommended
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
White Package, -M Suffix
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
20
33 Sec
0
0
60
120
180
270
360
Time (s)
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
12
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
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reference information only.
Rev. I26
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
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Contents
•General description
•Features
•Product status/pricing/packaging
Product Change Notices
(PCNs)
Datasheet
•Applications
•Order Samples
Download this
datasheet
•Ordering information
•Safety agency certificates
•Qualification Support
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Quality and reliability
Design center
General description
e-mail this datasheet
The 4N29, 4N30, 4N31, 4N32 and 4N33 have a gallium arsenide infrared
emitter optically coupled to a silicon planar photodarlington.
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This page
Print version
Features
z
z
z
High sensitivity to low input drive current
Meets or exceeds all JEDEC registered specifications
VDE 0884 approval available as a test option - add option .300.
(e.g. 4N29.300)
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Applications
z
z
z
z
z
Low power logic circuits
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedances
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Ordering information
The following options can be ordered with this part:
Order Entry
Option
Description
Identifier
S
SD
W
.S
.SD
.W
Surface-Mount Lead Bend
Surface-Mount; Tape and Reel
0.4" Lead Spacing
300
300W
3S
.300
.300W
.3S
VDE 0884
VDE 0884; 0.4" Lead Spacing
VDE 0884; Surface-Mount
3SD
.3SD
VDE 0884; Surface-Mount; Tape and Reel
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Product status/pricing/packaging
Product Product status
Pb-free Status
Package type
Leads
Packing method
4N31
Lifetime Buy
Lifetime Buy
Lifetime Buy
Lifetime Buy
Lifetime Buy
Lifetime Buy
Lifetime Buy
Lifetime Buy
DIP-B
6
BULK
4N31300
4N31300W
4N313S
4N313SD
4N31S
DIP-B
DIP-B
6
6
6
6
6
6
6
BULK
BULK
SMDIP-B
SMDIP-B
SMDIP-B
SMDIP-B
DIP-B
BULK
TAPE REEL
BULK
4N31SD
4N31W
TAPE REEL
BULK
Indicates product with Pb-free second-level interconnect. For more information click here.
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Safety agency certificates
Certificate
E90700, Vol. 1 (936 K)
E90700, Vol. 1 (936 K)
0122085 (677 K)
P01101067 (1638 K)
FI 16812 (964 K)
310684-02 (623 K)
1027742 (2305 K)
94766 (1673 K)
Agency
Underwriters Laboratories Inc.
Underwriters Laboratories Inc.
SEMKO
NEMKO
FIMKO
DEMKO Testing & Certification
Canadian Standards Association
VDE Pruf-und Zertifizierungsinstitut
UL (1577)
C-UL
SEMKO
NEMKO
FIMKO
DEMKO
CSA
VDE
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Qualification Support
Click on a product for detailed qualification data
Product
4N31
4N31300
4N31300W
4N313S
4N313SD
4N31S
4N31SD
4N31W
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© 2007 Fairchild Semiconductor
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