BC328-25J18Z [FAIRCHILD]

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN;


型号：	BC328-25J18Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
文件：	总5页 (文件大小：68K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC327/328

Switching and Amplifier Applications

•

Suitable for AF-Driver stages and low power output stages

Complement to BC337/BC338

TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

: BC327

: BC328

Collector-Emitter Voltage

CES

-50

-30

CEO

EBO

: BC327

: BC328

-45

-25

Emitter-Base Voltage

-5

-800

Collector Current (DC)

Collector Dissipation

Junction Temperature

Storage Temperature

°C

625

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage I = -10mA, I =0

CEO

CES

EBO

: BC327

: BC328

-45

-25

Collector-Emitter Breakdown Voltage I = -0.1mA, V =0

: BC327

: BC328

-50

-30

Emitter-Base Breakdown Voltage

IE= -10µA, I =0

-5

Collector Cut-off Current

: BC307

CES

= -45V, V =0

= -25V, V =0

-2

-100

: BC338

DC Current Gain

= -1V, I = -100mA

100

630

FE1

FE2

= -1V, I = -300mA

(sat) Collector-Emitter Saturation Voltage

(on) Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -500mA, I = -50mA

-0.7

-1.2

= -1V, I = -300mA

= -5V, I = -10mA, f=20MHz

100

MHz

= -10V, I =0, f=1MHz

Classification

100 ~ 250

60-

160 ~ 400

100-

250 ~ 630

170-

FE1

FE2

Rev. A, February 2000

Typical Characteristics

-500

-400

-300

-20

-16

-12

-8

-200

I_B= - 1.0mA

I_B= - 0.5mA

-100

-4

I_B= 0

-0

-1

-2

-3

-4

-5

-10

-20

-30

-40

-50

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Static Characteristic

1000

100

-10

PULSE

I_C= 10 I_B

PULSE

V_CE= - 2.0V

V_CE(sat)

-1

- 1.0V

-0.1

V_BE(sat)

-0.1

-0.01

-0.1

-1

-10

-100

-1000

-1

-10

-100

-1000

I_C[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-1000

-100

-10

1000

V_CE= -5.0V

V_CE= -1V

PULSE

100

-1

-0.1

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1

-10

-100

V_BE[V], BASE-EMITTER VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 5. Base-Emitter On Voltage

Figure 6. Gain Bandwidth Product

Rev. A, February 2000

Typical Characteristics ^(Continued)

100

-1000

-100

-10

f = 1MHz

SINGLE PULSE

I_CP

℃

T_C=25

duty cycle<2%

C_ib

C_ob

-1

0.1

100

-1

-10

-100

V_BE[V], COLLECTOR-BASE VOLTAGE

_CE[V], COLLECTOR-EMITTER VOLTAGE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Input and Output Capacitance

vs. Reverse Voltage

Figure 8. Safe Operating Area

0.8

0.6

0.4

0.2

0.0

100

125

150

175

T_C[^OC], CASE TEMPERATURE

Figure 9. Power Derating

Rev. A, February 2000

Package Demensions

TO-92

+0.25

–0.15

4.58

0.46 ±0.10

+0.10

–0.05

1.27TYP

0.38

[1.27 ±0.20

]

[1.27 ±0.20]

3.60 ±0.20

(R2.29)

Dimensions in Millimeters

Rev. A, February 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

相关型号：