BCV26 [FAIRCHILD]
PNP Darlington Transistor; PNP达林顿晶体管
| 型号： | BCV26 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP Darlington Transistor |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
30
V
V
V
A
Collector-Base Voltage
40
10
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BCV26
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
ã 1997 Fairchild Semiconductor Corporation
PNP Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
I = 10 A, I = 0
30
40
10
V
V
V
V(BR)CBO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
µ
C
E
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IE = 100 nA, IC = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
0.1
0.1
A
µ
µ
IEBO
Emitter-Cutoff Current
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
4,000
10,000
20,000
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1.0
1.5
V
VCE(sat)
VBE(sat)
IC = 100 mA, IB = 0.1 mA
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 30 mA, VCE = 5.0 V,
f = 100 MHz
VCB = 30 V, IE = 0, f = 1.0 MHz
220
3.5
MHz
pF
fT
Collector Capacitance
CC
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
50
1.6
1.2
0.8
0.4
0
β
= 1000
VCE = 5V
40
125 °C
- 40 ºC
30
25 °C
20
125 ºC
25 °C
10
- 40 °C
0
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
0.001
0.01
0.1
1
IC - COLLECTOR CURRENT (A)
PNP Darlington Transistor
(continued)
Typical Characteristics (continued)
Base Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
2
1.6
1.2
0.8
0.4
0
2
β
= 1000
1.6
1.2
0.8
0.4
0
- 40 ºC
25 °C
- 40 ºC
25 °C
125 ºC
125 ºC
V
= 5V
CE
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (A)
Collector-Cutoff Current
vs. Ambient Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
16
12
8
f = 1.0 MHz
V
= 15V
CB
1
C
ib
0.1
0.01
4
C
ob
0
25
50
75
100
125
0.1
1
10
100
TA- AMBIENT TEMPERATURE (ºC)
REVERSE VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
SOT-23
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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