- 最新上传
TLV9004QPWRQ1
TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier
TI
ABLIC
CARLOGAVAZZI
MSYSTEM
WJR-3BBS
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
PMBT3904-Q
40 V, 200 mA NPN switching transistorProduction
NEXPERIA
1ED32XXMC12H
EiceDRIVER⢠1ED32xxMC12H Two-level slew-rate control (2L-SRC)
INFINEON
XTAITQ
MURATA
KPE-6Z-D
Plug-in Signal Conditioners K-UNIT
MSYSTEM
MSYSTEM
WJR-3CBG
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
MSYSTEM
XTAITQ
MSYSTEM
EEETG2C4R7WP
Conductive Polymer Hybrid Aluminum Electrolytic Capacitors
PANASONIC
EEETG1C101WP
Conductive Polymer Hybrid Aluminum Electrolytic Capacitors
PANASONIC
BUK9M9R5-40H
N-channel 40 V, 9.5 mΩ logic level MOSFET in LFPAK33Production
NEXPERIA
ABLIC
MSYSTEM
XTAITQ
XTAITQ
XTAITQ
MURATA
INFINEON
MSYSTEM
IQE006NE2LM5
创新的OptiMOS™源极底置25V低压功率MOSFET（IQE006NE2LM5）采用PQFN3.3x3.3封装，使其容易与漏极底置解决方案一起用于同一PCB布线中。在相同的 3.3x3.3mm 封装外形中，最新源极底置封装将当前标准 RDS(on) 降低了约 30%，界定了新的行业基准 RDS(on)。此外，源极底置封装显著缩小了尺寸。现在，可以使用 PQFN3.3x3.3 的封装实现与 5x6mm SuperSO8 相同的性能，从而更高效地利用 PCB 基板面。另外，源极底置还提供了更好的功率损耗转移，这意味着卓越的热管理。总体而言，全新的创新源极底置技术可在最终应用中实现更高的系统效率和功率密度。这对于驱动器、电信系统、SMPS和服务器尤其必要。
INFINEON
ALV-C41-S
Limit Alarms (rotary switch adj.) AL-UNIT
MSYSTEM
TE
MURATA
- 元器件品牌
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
