FAN7387V [FAIRCHILD]
Ballast Control IC for Compact Fluorescent Lamp; 镇流器控制IC,适用于紧凑型荧光灯![FAN7387V](http://pdffile.icpdf.com/pdf1/p00138/img/icpdf/FAN73_763357_icpdf.jpg)
型号: | FAN7387V |
厂家: | ![]() |
描述: | Ballast Control IC for Compact Fluorescent Lamp |
文件: | 总12页 (文件大小:2098K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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July 2009
FAN7387V
Ballast Control IC for Compact Fluorescent Lamp
Features
Description
The FAN7387V, developed using Fairchild’s unique
high-voltage process and system-in-package (SiP)
concept, is a ballast-control integrated circuit (IC) for a
compact fluorescent lamp (CFL). The FAN7387V has a
simple oscillating circuit using an external resistor and
capacitor so the frequency variation is stable across the
temperature range. FAN7387V has a external pin for
dead time control and shutdown. By using this resistor, a
designer can choose the optimum dead time to reduce
the power loss on internal switching devices (MOSFETs).
Integrated Half-Bridge MOSFET
Internal Clock Using RCT
Enable External Sync Function Using RCT
Dead-Time Control by using Resistor
Shut Down (Disable Mode)
Internal Shunt Regulator
UVLO Function High and Low Side
Applications
Compact Fluorescent Lamp Ballast
8-DIP
Ordering Information
Part Number
Operating Temperature
Package
Packing Method
Eco Status
8-Lead, Dual-In-line
Package (DIP)
FAN7387VN
-40 to +125°C
RoHS
Tube
For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
Typical Applications Diagrams
Figure 1. Typical Application Circuit for Fluorescent Lamp (Rapid Starting Method without PTC)
Figure 2. Typical Application Circuit for Fluorescent Lamp (Rapid Starting Method with PTC)
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
2
Internal Block Diagram
HIGH- SIDE DRIVER
VB
UVLO
UVLO
Q
Noise
Canceller
S
Q
R
S
R
Q
Internal CLK
Frequency Divide)r
SET
D
Q
(
Q
RESET
External
Sync
HIN
IN
VDD
Logic Detection Level
DT
LIN
DELAY
SHUTDOWN
LOW- SIDE GATE DRIVER
Always LIN
First
HIN
LIN
Figure 3.
Functional Block Diagram
Pin Configuration
OUT PGND GND
DT/SD
8
7
6
5
FAN7387V
YWW
( YWW: Work Week Code)
1
2
3
4
VDC VB VDD RCT
Figure 4.
Pin Configurations (Top View)
Pin Definitions
Pin #
Name
VDC
VB
Description
1
2
3
4
5
6
7
8
High-voltage Supply
High-Side Floating Supply
Supply Voltage
VDD
RCT
Oscillator Frequency Set Resistor and Capacitor
Dead Time Set Resistor
DT/SD
GND
PGND
OUT
Signal Ground
Power Ground
High-Side Floating Supply Return
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Symbol
VB
Parameter
High-Side Floating Supply
Min.
-0.3
-0.3
Typ.
Max.
465.0
440.0
Unit
V
VOUT
VRCT
ICL
High-Side Floating Supply Return
RCT Pins Input Voltage
V
VDD
50
V
Clamping Current Level(1)
25
mA
V/ns
°C
dVOUT/dt
TA
Allowable Offset Voltage Slew Rate
Operating Temperature Range
Storage Temperature Range
Power Dissipation
-40
-65
+125
+150
TSTG
PD
°C
2.1
70
W
Thermal Resistance (Junction-to-Air)
°C/W
ΘJA
Note:
1. Do not supply a low-impedance voltage source to the internal clamping Zener diode between the GND and the
VDD pin of this device.
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
4
Electrical Characteristics
VBIAS (VDD, VB -VOUT)=14.0V, TA=25°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
High Voltage Supply Section
VDC
High Voltage Supply Voltage
440
V
Low-Side Supply Characteristics (VDD
)
VDDUV+ VDD UVLO Positive-Going Threshold
VDDUV- VDD UVLO Negative-Going Threshold
VDDUHY VDD-Side UVLO Hysteresis
VDD Increasing
VDD Decreasing
9
11
8.8
2.2
15.4
60
13
7.8
9.8
V
VCL
IST
Supply Camping Voltage
IDD=10mA
14.4
Startup Supply Current
VDD=9V
90
µA
IQDD
IDD
Low-Side Quiescent Supply Current
Dynamic Operating Supply Current
230
0.6
380
RDT=100kΩ
20kHz, CL=1nF
mA
High-Side Supply Characteristics (VB-VOUT
)
VHSUV+ High-Side UVLO Positive-Going Threshold
VHSUV- High-Side UVLO Negative-Going Threshold
VHSUHY VBS Supply UVLO Hysteresis
VB-VOUT Increasing
VB-VOUT Decreasing
8
9
10
7.5
8.5
0.5
50
9.5
V
IQHS
IPBS
High-Side Quiescent Supply Current
90
µA
High-Side Dynamic Operating Supply Current
20kHz, CL=1nF
130
180
Oscillator Characteristics
fosc
D
Oscillation Frequency
Duty Cycle
18
20
49.0
22
kHz
%
RT=50kΩ, CT=330pF
Running Mode
Running Mode
Running Mode
Running Mode
Running Mode
47.5
VRCT+ Upper Threshold Voltage of RCT
VDD
VRCT-
VIH
Lower Threshold Voltage of RCT
Logic “1” Input Voltage of RCT
Logic “0” Input Voltage of RCT
Dead Time
VDD/4
3/4 VDD
V
VIL
3/5 VDD
640
tD
440
280
540
400
RDT=100kΩ
ns
tDMIN
Minimum Dead Time
VDT/SD=VDD
520
Protection Characteristics
VSD+
VSD-
ISD
Shutdown “1” Input Voltage
2.5
V
VSD/DT=0 After Run
Mode
Shutdown “0” Input Voltage
Shutdown Current
1
350
µA
Ns
tSD
Shutdown Propagation Delay
180
Internal MOSFET Section
ILKMOS Internal MOSFET Leakage Current
VDS=400V
50
µA
RON
Static Drain-Source On-Resistance
VGS=10V, ID=190mA
4.6
6.0
Ω
Maximum Continuous Drain-Source Diode
Forward Current
IS
0.38
A
Maximum Pulsed Continuous Drain-Source
Diode Forward Current
ISM
3.04
A
V
VSD
Drain-Source Diode Forward Voltage
VGS=0V, IS=0.38A
1.2
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
5
Typical Performance Characteristics
200
150
100
50
12.5
12.0
11.5
11.0
10.5
10.0
9.5
0
-40
-40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 5. Startup Current vs. Temperature
Figure 6. VDD UVLO+ vs. Temperature
10.5
10.0
9.5
10.0
9.6
9.2
8.8
8.4
8.0
7.6
7.2
9.0
8.5
8.0
7.5
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 7. VDD UVLO- vs. Temperature
Figure 8. VB-VOUT UVLO+ vs. Temperature
10.0
16.0
15.8
15.6
15.4
15.2
15.0
14.8
9.6
9.2
8.8
8.4
8.0
7.6
7.2
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 9. VB-VOUT UVLO- vs. Temperature
Figure 10. VCL vs. Temperature
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
500
400
300
200
100
0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100 120
Temperature [°C]
Temperature [°C]
Figure 11. IPDD vs. Temperature
Figure 12. IQDD vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
500
400
300
200
100
0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 13. ISD vs. Temperature
Figure 14. VSD+ vs. Temperature
23
3.0
2.5
2.0
1.5
1.0
22
21
20
19
18
17
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 15. VSD- vs. Temperature
Figure 16. Operating Frequency vs. Temperature
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
7
Typical Performance Characteristics (Continued)
50
40
30
20
10
0
500
475
450
425
400
375
350
325
300
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 17. tDMIN vs. Temperature
Figure 18. Dead-Time Mismatch vs. Temperature
52
51
50
49
48
52
51
50
49
48
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 19. High-Side Duty Ratio vs. Temperature
Figure 20. Low-Side Duty Ratio vs. Temperature
Figure 21. Frequency vs. RT
Figure 22. On-Region Characteristics
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
8
Typical Performance Characteristics (Continued)
Figure 23. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 24. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
Figure 25. Breakdown Voltage Variation vs. Temperature Figure 26. On-Resistance Variation vs. Temperature
Figure 27. Maximum Safe Operating Area
Figure 28. Maximum Drain-Current
vs. Case Temperature
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
9
Application Information
1. Under-Voltage Lockout (UVLO) Function
RCT
LO
FAN7387V has a UVLO circuit for a low-side and high-
side block. When VDD reaches to the VDDUV+, the UVLO
circuit is released and the FAN7387V operates normally.
At UVLO condition, the FAN7387V has a low supply
current of less than 130µA. Once UVLO is released,
FAN7387V operates normally until VDD goes below
VDDUV-, the UVLO hysteresis. FAN7387V also has a
high-side gate driver. The supply for the high-side driver
is applied between VB and VOUT. To prevent malfunction
at low supply voltage between VB and VOUT, FAN7387V
provides an additional UVLO circuit. If VB-VOUT is under
t
Tfix
Tfix
HO
DT
DT
VHSUV+, the driver holds LOW state to turn off the high-
side switch. Once the voltage of VB-VOUT is higher than
VHSUV+, after VB-VOUT exceeds VHSUV-, the operation of
driver resumes.
T
Figure 30. Typical Waveforms of RCT and Internal
Signal (LO, HO) of IC
2. Oscillator
The running frequency is determined by an external
timing resistor (RT) and timing capacitor (CT). The charge
time of capacitor CT from 1/4 VDD to VDD determines the
running frequency of gate driver output (VOUT).
t = 1.38 • RT • CT
(2)
The running frequency of IC is determined by 1/t and is
approximately given as:
1
t
1
frunning
=
=
(3)
2(
t + tfix
)
where t is the discharging time of the RCT voltage and tfix
is constant value about 450ns of IC.
3. Programming Dead Time Control /
Shutdown
A multi-function pin controls dead time using an external
resistor (RDT) and protects abnormal condition using an
external switch. This pin should be connected to an
external capacitor to maintain stable operation.
Figure 29. Typical Connection Method
If the voltage of DT/SD is decreased to under 1V by an
external switch, such as the TR or MOSFET, the
FAN7387V enters shutdown mode. In this mode, the
FAN7387V doesn’t have any output signal.
Figure 30 shows the typical waveforms of RCT and
internal signals (LO and HO) of IC. From the circuit
analysis, the discharging time of RCT, t, is given by:
⎛
⎞
⎟
⎟
⎠
− t
RT • CT
⎜
VRCT (t) = VDD ×In
(1)
⎜
⎝
From Equation 1, it is possible to calculate the
discharging time, t, from VDD to one quarter (1/4) of VDD
by substituting VRCT(t) with 1/4 VDD
.
Figure 31. External Shutdown Circuit
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
10
Physical Dimensions
.400 10.15
.373 9.46
A
[
]
.036 [0.9 TYP]
(.092) [Ø2.337]
PIN #1
(.032) [R0.813]
PIN #1
.250±.005 [6.35±0.13]
B
TOP VIEW
OPTION 1
TOP VIEW
OPTION 2
.070 1.78
.310±.010 [7.87±0.25]
.045
[ ]
1.14
.130±.005 [3.3±0.13]
.210 MAX
[5.33]
7° TYP
7° TYP
C
.015 MIN
[0.38]
.021 0.53
.015 0.37
.300
[7.62]
[
]
.140 3.55
.125 3.17
[
]
.001[.025]
C
.100
[2.54]
.430 MAX
[10.92]
.060 MAX
[1.52]
NOTES:
A. CONFORMS TO JEDEC REGISTRATION MS-001,
VARIATIONS BA
B. CONTROLING DIMENSIONS ARE IN INCHES
+.005
-.000
+0.127
-0.000
.010
0.254
[
]
REFERENCE DIMENSIONS ARE IN MILLIMETERS
C. DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED
.010 INCHES OR 0.25MM.
D. DOES NOT INCLUDE DAMBAR PROTRUSIONS.
DAMBAR PROTRUSIONS SHALL NOT EXCEED
.010 INCHES OR 0.25MM.
E. DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
N08EREVG
Figure 32. 8-Lead Dual Inline Package (DIP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
11
© 2008 Fairchild Semiconductor Corporation
FAN7387V • 1.0.0
www.fairchildsemi.com
12
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