FCP20N60 [FAIRCHILD]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FCP20N60 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总10页 (文件大小：1248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2005
SuperFETTM
FCP20N60 / FCPF20N60
600V N-Channel MOSFET
Features
Description
TM
•
•
•
•
•
650V @T = 150°C
SuperFET
is, Farichild’s proprietary, new generation of high
J
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
Typ. R
= 0.15Ω
DS(on)
Ultra low gate charge (typ. Q = 75nC)
g
Low effective output capacitance (typ. C .eff = 165pF)
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
oss
100% avalanche tested
D
{
z
ꢀ ꢁ
z
z
G
{
TO-220
G D
TO-220F
{
S
G
D S
S
Absolute Maximum Ratings
Symbol
DSS
Parameter
FCP20N60 FCPF20N60
Unit
V
Drain-Source Voltage
Drain Current
600
V
I
- Continuous (T = 25°C)
- Continuous (T = 100°C)
20
20*
12.5*
A
A
D
C
C
12.5
(Note 1)
I
Drain Current
- Pulsed
A
DM
60
60*
V
E
Gate-Source voltage
30
690
20
V
mJ
A
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
I
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
20.8
4.5
mJ
V/ns
AR
dv/dt
P
Power Dissipation
(T = 25°C)
208
1.67
39
0.3
W
W/°C
D
C
- Derate above 25°C
T
T
T
Operating and Storage Temperature Range
-55 to +150
300
°C
J, STG
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
L
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
θJC
Parameter
FCP20N60 FCPF20N60
Unit
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
0.6
3.2
Thermal Resistance, Junction-to-Ambient
62.5
62.5
θJA
©2005 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. A1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
FCP20N60
FCPF20N60
Package
Reel Size
Tape Width
Quantity
FCP20N60
TO-220
-
-
50
FCPF20N60
TO-220F
-
-
50
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Off Characteristics
Parameter
Conditions
Min
Typ Max Units
BV
Drain-Source Breakdown Voltage
V
V
= 0V, I = 250µA, T = 25°C
600
--
--
--
--
V
V
DSS
GS
GS
D
J
= 0V, I = 250µA, T = 150°C
650
D
J
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250µA, Referenced to 25°C
--
--
0.6
--
--
V/°C
D
/
∆T
J
BV
Drain-Source Avalanche Breakdown
Voltage
DS
V
= 0V, I = 20A
700
V
GS
D
I
Zero Gate Voltage Drain Current
V
V
= 600V, V = 0V
--
--
--
--
1
10
µA
µA
DSS
DS
DS
GS
= 480V, T = 125°C
C
I
I
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
V
= 30V, V = 0V
--
--
--
--
100
nA
nA
GSSF
GS
GS
DS
= -30V, V = 0V
-100
GSSR
DS
On Characteristics
V
Gate Threshold Voltage
V
V
V
= V , I = 250µA
3.0
--
--
5.0
0.19
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10V, I = 10A
0.15
17
D
(Note 4)
g
Forward Transconductance
= 40V, I = 10A
--
FS
D
Dynamic Characteristics
C
C
C
C
C
Input Capacitance
V
= 25V, V = 0V,
--
--
--
--
--
2370
1280
95
3080
1665
--
pF
pF
pF
pF
pF
iss
DS
GS
f = 1.0MHz
Output Capacitance
oss
rss
oss
oss
Reverse Transfer Capacitance
Output Capacitance
V
V
= 480V, V = 0V, f = 1.0MHz
65
85
DS
DS
GS
eff.
Effective Output Capacitance
= 0V to 400V, V = 0V
165
--
GS
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
= 300V, I = 20A
--
--
--
--
--
--
--
62
140
230
65
135
290
470
140
98
ns
ns
d(on)
DD
G
D
R
= 25Ω
r
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
V
V
= 480V, I = 20A
75
nC
nC
nC
g
DS
GS
D
= 10V
13.5
36
18
gs
--
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
I
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
20
60
1.4
--
A
A
S
SM
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0V, I = 20A
--
V
SD
GS
S
t
= 0V, I = 20A
530
10.5
ns
µC
rr
GS
F
S
dI /dt =100A/µs
(Note 4)
Q
Reverse Recovery Charge
--
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 10A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 20A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
J
SD
DD
DSS
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FCP20N60 / FCPF20N60 Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
VGS
102
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
150°C
Bottom : 5.5 V
101
100
25°
C
-55°C
Note
1. VDS = 40V
2. 250 s Pulse Test
Notes :
1. 250
µ
s Pulse Test
2. TC = 25°C
µ
2
4
6
8
10
10-1
100
101
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Drain Current and Gate Voltage
102
0.4
0.3
0.2
0.1
0.0
VGS = 10V
101
VGS = 20V
150°C
25°C
100
Notes :
1. VGS = 0V
2. 250µs Pulse Test
Note : TJ = 25°C
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
12
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
Crss = Cgd
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10
8
VDS = 250V
VDS = 400V
Coss
6
Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
4
Crss
2
Note : ID = 20A
60 70
0
10-1
100
101
0
10
20
30
40
50
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FCP20N60 / FCPF20N60 Rev. A1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
Notes :
0.9
0.8
1. VGS = 0 V
Notes :
2. ID = 250µA
1. VGS = 10 V
2. ID = 20 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
for FCP20N60
Figure 9-2. Maximum Safe Operating Area
for FCPF20N60
Operation in This Area
Operation in This Area
102
102
is Limited by R DS(on)
is Limited by R DS(on)
100 us
100 us
1 ms
101
100
10-1
10-2
101
1 ms
10 ms
10 ms
100 ms
DC
100
DC
Notes :
1. TC = 25
2. TJ = 150
3. Single Pulse
Notes :
°
C
1. TC = 25°C
10-1
°C
2. TJ = 150
3. Single Pulse
°C
10-2
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [°C]
4
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FCP20N60 / FCPF20N60 Rev. A1
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP20N60
100
10-1
10-2
D=0.5
0.2
N otes
1. ZθJC (t)
2. D uty Factor, D =t1/t2
3. TJM TC PD M ZθJC (t)
:
=
0.6°C /W M ax.
0.1
-
=
*
0.05
0.02
0.01
PDM
t1
single pulse
10-3
t2
10-5
10-4
10-2
10-1
100
101
t1, Square W ave Pulse D uration [sec]
Figure 11-2. Transient Thermal Response Curve for FCPF20N60
D =0.5
100
0.2
0.1
N otes
1. Z θ JC (t) = 3.2
2. D uty F actor, D = t1/t2
:
°
C /W M ax.
0.05
10-1
3. T J M
- T C = P D M * Z θ JC (t)
0.02
0.01
PDM
single pulse
10-4
t1
10-2
t2
10-5
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
5
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FCP20N60 / FCPF20N60 Rev. A1
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
10V
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
L
1
2
----
--------------------
BVDSS - VDD
EAS
=
L IAS
VDS
I D
2
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
6
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FCP20N60 / FCPF20N60 Rev. A1
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS
( Driver )
--------------------------
Gate Pulse Period
D =
10V
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
7
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FCP20N60 / FCPF20N60 Rev. A1
Mechanical Dimensions
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
ø3.60 0.10
–0.05
1.27 0.10
1.52 0.10
0.80 0.10
+0.10
–0.05
0.50
2.40 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
8
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FCP20N60 / FCPF20N60 Rev. A1
Mechanical Dimensions (Continued)
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
#1
0.35 0.10
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
9.40 0.20
Dimensions in Millimeters
9
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FCP20N60 / FCPF20N60 Rev. A1
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
10
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FCP20N60 / FCPF20N60 Rev. A1
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