FD6M043N08 [FAIRCHILD]
75V/65A Synchronous Rectifier Module; 75V / 65A同步整流模块
| 型号： | FD6M043N08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 75V/65A Synchronous Rectifier Module |
| 文件： | 总9页 (文件大小：661K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2008
Power-SPMTM
FD6M043N08
75V/65A Synchronous Rectifier Module
tm
General Features
General Description
The FD6M043N08 is one product in the Power-SPMTM family
that Fairchild has newly developed and designed to be most
suitable for more compact and more efficient synchronous recti-
fication applications such as internet server power supplies and
telecom system power supplies. For higher efficiency, it includes
built-in very low RDS(ON) MOSFETs. This Power-SPM device
can be used in the secondary side of the PWM transformer of
forward/bridge converter to provide high current rectification at
output voltages ranging from 12 Volts down to 5 Volts. With this
product, it is possible to design the secondary side of power
supply systems with reduced parasitic elements resulting in
minimized voltage spike and EMI noise.
•
•
•
Very High Rectification Efficiency at Output 12V
Integrated Solution for Saving Board Space
RoHS Compliant
MOSFET Features
Applications
•
•
•
•
•
•
High Current Isolated Converter
Distributed Power Architectures
Synchronous Rectification
DC/DC Converter
•
•
•
•
•
•
•
VDSS = 75V
QG(TOTAL) = 99nC(Typ.), VGS = 10V
RDS(ON) = 3.5mΩ(Typ.), VGS = 10V, ID = 40A
Low Miller Charge
Battery Supplied Application
ORing MOSFET
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Fully Isolated Package
1
15
EPM15 Package
Block Diagram
10
9
G2
D2
15
8
Q2
14
13
12
11
G1
6
7
S2
Q1
S1
D1
1
2
3
4
5
Figure 1. FD6M043N08 Module Block Diagram
©2008 Fairchild Semiconductor Corporation
FD6M043N08 Rev. A
1
www.fairchildsemi.com
Pin Configuration and Pin Description
Top View
D1
S1
G1
NC
G2
S2
D2
NC
NC
Figure 2. Pinmap of FD6M043N08
Pin Number
Pin Name
Pin Description
1
D1
S1
G1
NC
NC
NC
G2
S2
D2
Drain of Q1, MOSFET
Source of Q1, MOSFET
Gate of Q1, MOSFET
No Connection
2 ~ 5
6
7
8
9
No Connection
No Connection
10
Gate of Q2, MOSFET
Source of Q2, MOSFET
Drain of Q2, MOSFET
11 ~ 14
15
Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified
Symbol
Parameter
Rating
75
Unit
V
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
(Note1)
±20
V
Drain Current, Continuous (VGS = 10V)
Single Pulse Avalanche Energy
65
A
(Note1)
EAS
681
mJ
°C
(Note1,2)
TJ, TSTG
Operating and Storage Temperature Range
-40 ~ 150
Thermal Resistance
Symbol
Parameter
Junction to Case Thermal Resistance
Min.
Typ.
Max.
Unit
RθJC
-
-
3.9
°C/W
(Note1)
Note:
1. Each MOSFET Switch
2. Starting T = 25°C, V = 40V, L = 0.2mH, I = 56.4A
J
D
AS
FD6M043N08 Rev. A
2
www.fairchildsemi.com
Electrical Characteristics TC = 25°C, Unless Otherwise Specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Synchronous Rectifier Switch Part (Each Switch)
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
ID= 250μA, VGS = 0V
75
-
-
-
-
-
1
V
VGS = 0V, VDS = 60V
VGS = ±20V
μA
nA
IGSS
-
±100
VGS(TH)
VD = 20V, IDS = 250μA
2.0
-
4.0
4.3
-
V
RDS(ON)
Drain to Source On Resistance
ID = 40A, VGS = 10V
-
-
3.5
6.44
mΩ
T = 150°C
J
Dynamic Charateristics
CISS
Input Capacitance
-
-
-
-
-
-
-
-
6180
990
310
99
-
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V,
f = 1MHz
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Output Capacitance
-
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
-
148
18
-
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V
12
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “MIller” Charge
30
nC
nC
nC
Qgs2
ID = 80A
18
-
Qgd
Ig = 1.0mA
25
-
Switching Charateristics (VGS = 10V)
tON
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
90
ns
ns
ns
ns
ns
ns
25
25
50
26
-
-
-
ID = 40A
VGS = 10V, VDD = 40V, RG = 5Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
tOFF
Turn-Off Time
130
Drain-Source Diode Charateristics
VSD
Source to Drain Diode Voltage
ISD = 80A, VGS = 0V
-
-
-
-
-
1.25
V
ISD = 40A, VGS = 0V
-
1.0
trr
Reverse Recovery Time
ISD = 40A, dISD/dt = 100A/μs
ISD = 40A, dISD/dt = 100A/μs
42
62
-
-
ns
Qrr
Reverse Recovery Charge
nC
FD6M043N08 Rev. A
3
www.fairchildsemi.com
Typical Performance Characteristics Each Switch, Unless Otherwise Specified
Figure 3. On-Region Characteristics
120
VGS
VDS
Top :
10.0 V
8.0 V
7.0 V
6.0 V
ID
D
80
40
0
VGS
Bottom : 5.0 V
G
VDS
VGS,STEP
*Notes :
1. 250μs Pulse Test
FD6M043N08
2. TC = 25oC
S
0.0
0.5
1.0
1.5
VDS, Drain-Source Voltage[V]
Figure 4. Transfer Characteristics
150
VDS
ID
120
90
150oC
25oC
D
VGS
-40oC
G
60
30
0
VDS
VGS
*Notes :
FD6M043N08
1. VDS = 15V
2. 250μs Pulse Test
S
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS, Input Voltage[V]
Figure 5. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 6. Output Capacitance Characteristics
10
100
Ciss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + C
gd
Crss = Cgd
8
4
0
Ciss
150oC
25oC
10
* Notes :
Coss
1. VGS = 0 V
2. f = 1 MHz
*Notes :
1. VGS = 0V
2. 250μs Pulse Test
Crss
1
0.3
75
0.1
1
10
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
VDS, Drain-Source Voltage [V]
FD6M043N08 Rev. A
4
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.20
2.5
2.0
1.5
1.0
* Notes:
1. VGS = 0V
2. ID = 250μA
1.10
1.00
* Notes :
1. VGS = 10 V
2. ID = 40 A
0.5
0.90
0.85
0.0
-50
0
50
100
150
200
-50
0
50
100
150 200
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
Figure 9. Transient Thermal Response Curve
10
1
0.5
0.2
0.1
0.05
PDM
0.1
0.02
0.01
t1
t2
*Notes:
1. ZθJC(t) = 3.9oC/W Typ.
2. Duty Factor, D= t1/t2
0.01
0.001
Single pulse
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
Figure 10. Maximum Safe Operating Area
Figure 11. Unclamped Inductive Switching
Capability
400
200
If R = 0
100
tAV
If R ?
tAV
=
(L)(IAS)/(1.3*Rated BVDSS - VDD
0
(L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1]
)
100μs
1ms
=
100
10
1
10ms
DC
10
Starting TJ = 25oC
Operation in This Area
is Limited by R DS(on)
Starting TJ = 125oC
* Notes :
1
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage [V]
tAV, Time In Avalanche [ms]
FD6M043N08 Rev. A
5
www.fairchildsemi.com
AC Test Circuits and Waveforms
tp
VDS
IAS
V
DS
I
AS
L
D
VGS
V
DD
G
VDD
VGS
tp
FD6M043N08
S
0
t
AV
Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms
VDS
D
RL
VGS
RG
G
VDD
PULSE
FD6M043N08
S
Figure 13. Switching Test Circuit
tON
tOFF
td(OFF)
td(ON)
tr
tf
90%
90%
VDS
10%
10%
90%
50%
VGS
50%
PULSE WIDTH
10%
Figure 14. Switching Test Waveforms
FD6M043N08 Rev. A
6
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Application circuits
VIN
VOUT
10
9
15
D2
G2
8
6
Q2
14
13
12
11
G1
7
S2
PWM
Q1
Controller
S1
D1
1
2
3
4
5
OPTO
Feedback
Figure 15. Application Circuit of Forward Converter with FD6M043N08
LF
VOUT
VIN
10
9
15
D2
G2
CF
Q1
8
6
Q2
CR
14
13
12
11
G1
FOD817
KA431
VOUT_FB
7
S2
Q1
Q2
S1
D1
1
2
3
4
5
LF
Figure 16. Application Circuit of Asymmetrical HB Converter with FD6M043N08
LF
VOUT
VIN
Q1
Q3
10
9
15
D2
G2
CF
8
6
Q2
14
13
12
11
G1
FOD817
KA431
VOUT_FB
7
S2
Q1
Q2
Q4
S1
D1
1
2
3
4
5
LF
Figure 17. Application Circuit of Full Bridge Converter with FD6M043N08
FD6M043N08 Rev. A
7
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Detailed Package Outline Drawings
26.20
25.80
2.70
2.30
23.10
22.90
(0.50)
(R0.50)
5.35
5.15
10.70
10.30
(12.00)
14.50
13.50
18.50
17.50
(1.50)
(R0.55)
(R0.55)
(0.77)
0.70
0.30
(6.00)
0.60
0.40
MAX 3.07
MAX 0.80
2.97
2.77
0.70
0.50
3.48
2.88
1.27
22.86
(R0.50)
2.70
2.30
Figure 18. EPM15 Package
Dimensions in Millimeters
FD6M043N08 Rev. A
8
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
PDP SPM™
The Power Franchise®
FPS™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
SMART START™
SPM®
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
MicroPak™
UHC®
Ultra FRFET™
UniFET™
VCX™
Fairchild®
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
OPTOPLANAR®
FAST®
VisualMax™
®
SyncFET™
FastvCore™
®
FlashWriter® *
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Preliminary
Formative / In Design
First Production
This datasheet contains preliminary data; supplementary data will be published
at a later date. Fairchild Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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