FDB3632_SB82115 [FAIRCHILD]

暂无描述;
FDB3632_SB82115
元器件型号: FDB3632_SB82115
生产厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用:

暂无描述

PDF文件: 总11页 (文件大小:400K)
下载文档:  下载PDF数据表文档文件
型号参数:FDB3632_SB82115参数

FDB3652

rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V

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37 TYSEMI

FDB3652

N-Channel PowerTrench MOSFET 100V, 61A, 16mз

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134 FAIRCHILD

FDB3652_08

N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ

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16 FAIRCHILD

FDB3652_F085

Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3

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0 FAIRCHILD

FDB3652_NL

Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3

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0 FAIRCHILD

FDB3672

N-Channel PowerTrench MOSFET

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49 FAIRCHILD

FDB3672_09

N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ

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17 FAIRCHILD

FDB3672_F085

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3

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0 FAIRCHILD

FDB3682

rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V

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22 TYSEMI

FDB3682

N-Channel PowerTrench MOSFET

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38 KEXIN

FDB3682

N-Channel PowerTrench MOSFET 100V, 32A, 36mз

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96 FAIRCHILD

FDB3682_NL

Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

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0 FAIRCHILD

FDB-37PF

FD TYPE CONNECTOR FOR RIBBON CABLE

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4 HRS

FDB-37SF

FD TYPE CONNECTOR FOR RIBBON CABLE

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7 HRS

FDB3860

N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ

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16 FAIRCHILD