FDB7045L [FAIRCHILD]

N-Channel Logic Level PowerTrench MOSFET; N沟道逻辑电平的PowerTrench MOSFET
FDB7045L
型号: FDB7045L
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

N-Channel Logic Level PowerTrench MOSFET
N沟道逻辑电平的PowerTrench MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件: 总10页 (文件大小:428K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
January 2000  
FDP7045L/FDB7045L  
®
N-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
• 100 A, 30 V. RDS(ON) = 0.0045 W @ VGS = 10 V  
RDS(ON) = 0.006 W @ VGS = 4.5 V.  
This N-Channel Logic Level MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers.  
• Critical DC electrical parameters specified at elevated  
temperature.  
These MOSFETs feature faster switching and lower gate  
charge than other MOSFETs with comparable RDS(on)  
specifications resulting in DC/DC power supply designs  
with higher overall efficiency.  
• Rugged internal source-drain diode can eliminate the  
need for an external Zener diode transient suppressor.  
• High performance PowerTrench technology for  
extremely low RDS(ON)  
.
• 175°C maximum junction temperature rating.  
D
D
G
G
G
TO-220  
FDP Series  
D
S
TO-263AB  
FDB Series  
S
S
TC = 25°C unless otherwise noted  
Absolute Maximum Ratings  
FDP7045L  
FDB7045L  
Symbol  
VDSS  
Parameter  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
V
A
VGSS  
±
ID  
Maximum Drain Current - Continuous  
(Note 1)  
(Note 1)  
100  
75  
- Pulsed  
300  
125  
0.85  
PD  
Total Power Dissipation @ TC = 25 C  
W
°
Derate above 25 C  
W/ C  
°
°
C
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-65 to +175  
°
Thermal Characteristics  
R
θJC  
C/W  
Thermal Resistance, Junction-to-Case  
1.2  
°
R
θJA  
C/W  
Thermal Resistance, Junction-to-Ambient  
62.5  
°
Package Outlines and Ordering Information  
Device Marking  
FDB7045L  
Device  
FDB7045L  
FDP7045L  
Reel Size  
13’’  
Tape Width  
Quantity  
800  
24mm  
N/A  
FDP7045L  
Tube  
45  
ã1999 Fairchild Semiconductor Corporation  
FDP7045L/FDB7045L Rev.C  
TC = 25°C unless otherwise noted  
Electrical Characteristics  
Symbol  
Parameter  
Test Conditions  
Min Typ  
Max Units  
Off Characteristics  
BVDSS  
Drain-Source Breakdown  
Voltage  
Breakdown Voltage Temperature ID = 250 A, Referenced to 25 C  
VGS = 0 V, ID = 250  
A
30  
V
µ
22  
mV/ C  
DSS  
BV  
µ
°
°
Coefficient  
TJ  
IDSS  
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V  
1
A
µ
IGSSF  
Gate-Body Leakage Current,  
Forward  
Gate-Body Leakage Current,  
Reverse  
VGS = 20 V, VDS = 0 V  
VGS = -20 V, VDS = 0 V  
100  
nA  
IGSSR  
-100  
3
nA  
(Note 2)  
On Characteristics  
VGS(th)  
Gate Threshold Voltage  
VDS = VGS, ID = 250  
A
1
1.5  
-5  
V
µ
Gate Threshold Voltage  
Temperature Coefficient  
ID = -250 A, Referenced to 25 C  
mV/ C  
GS(th)  
V
µ
°
°
TJ  
RDS(on)  
Static Drain-Source  
On-Resistance  
VGS = 10 V, ID = 50 A,  
VGS = 10 V, ID = 50 A, TJ=125 C  
VGS = 4.5 V,ID = 40 A  
VGS = 10 V, VDS = 10 V  
0.0039 0.0045  
0.0056 0.0070  
0.0048 0.0060  
°
ID(on)  
gFS  
On-State Drain Current  
50  
A
S
Forward Transconductance  
VDS = 5 V, ID = 50 A  
120  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
V
DS = 15 V, VGS = 0 V,  
5400  
1170  
530  
pF  
pF  
pF  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
(Note 2)  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
V
DD = 15 V, ID = 50 A,  
14  
114  
105  
115  
50  
30  
160  
150  
160  
70  
ns  
ns  
VGS = 10 V  
ns  
ns  
Qg  
Qgs  
Qgd  
V
DS = 15 V,  
nC  
nC  
nC  
ID = 50 A, VGS = 5 V  
16  
16  
Drain-Source Diode Characteristics and Maximum Ratings  
(Note 2)  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
75  
A
V
(Note 2)  
VSD  
Drain-Source Diode Forward  
Voltage  
V
= 0 V, I = 50 A  
0.95  
1.2  
Notes:  
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.  
2. PulseTest: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
FDP7045L/FDB7045L Rev.C  
Typical Characteristics  
2.2  
2
80  
VGS = 10V  
3.5V  
3.0V  
4.5V  
60  
40  
20  
0
1.8  
1.6  
1.4  
1.2  
1
VGS = 3.0V  
3.5V  
4.0V  
2.5V  
4.5V  
5.0V  
40  
6.0V  
7.0V  
60  
10V  
0.8  
0
0.5  
1
1.5  
2
0
20  
80  
VDS, DRAIN-SOURCE VOLTAGE (V)  
I
D, DRAIN CURRENT (A)  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation  
with Drain Current and Gate Voltage.  
0.014  
0.012  
0.01  
1.8  
1.6  
1.4  
1.2  
1
ID = 50A  
ID = 38A  
VGS = 10V  
0.008  
0.006  
0.004  
0.002  
0
TA = 125oC  
TA = 25oC  
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
2
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. On-Resistance Variation  
with Temperature.  
Figure 4. On-Resistance Variation  
with Gate-to-Source Voltage.  
60  
100  
10  
VDS = 5V  
VGS = 0V  
50  
40  
30  
20  
10  
0
TA = 125oC  
1
25oC  
-55oC  
0.1  
0.01  
0.001  
0.0001  
TA = 125oC  
25oC  
-55oC  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1
1.5  
2
2.5  
3
3.5  
4
VSD, BODY DIODE FORWARD VOLTAGE (V)  
V
GS, GATE TO SOURCE VOLTAGE (V)  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
and Temperature.  
Figure 5. Transfer Characteristics.  
FDP7045L/FDB7045L Rev.C  
Typical Characteristics (continued)  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
10  
f = 1MHz  
VGS = 0 V  
ID = 50A  
VDS = 5V  
10V  
8
CISS  
15V  
6
4
2
0
COSS  
CRSS  
0
20  
40  
60  
80  
100  
5
10  
15  
20  
25  
30  
Qg, GATE CHARGE (nC)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 7. Gate-Charge Characteristics.  
Figure 8. Capacitance Characteristics.  
1000  
100  
10  
5000  
4000  
3000  
2000  
1000  
0
SINGLE PULSE  
RθJC = 1.2oC/W  
TC = 25oC  
10  
µ
s
RDS(ON) LIMIT  
100  
s
µ
1ms  
10ms  
100ms  
VGS = 10V  
SINGLE PULSE  
RθJC = 1.2oC/W  
TC = 25oC  
1
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
1000  
VDS, DRAIN-SOURCE VOLTAGE (V)  
SINGLE PULSE TIME (SEC)  
Figure 9. Maximum Safe Operating Area.  
Figure 10. Single Pulse Maximum  
Power Dissipation.  
1
D = 0.5  
0.5  
0.3  
0.2  
R
(t) = r(t) * R  
JC  
θ
JC  
θ
0.2  
R
= 1.2 °C/W  
JC  
θ
0.1  
0.1  
P(pk)  
0.05  
0.05  
t
1
0.02  
0.01  
t
2
0.03  
0.02  
T
- T = P * R  
(t)  
JC  
θ
J
C
Duty Cycle, D = t / t  
1
Single Pulse  
2
0.01  
0.01  
0.05  
0.1  
0.5  
1
5
10  
50  
100  
500  
1000  
t
,TIME (ms)  
1
Figure 11. Transient Thermal Response Curve.  
Thermal characterization performed using the conditions described in Note 1.  
Transient themal response will change depending on the circuit board design.  
FDP7045L/FDB7045L Rev.C  
TO-220 Tape and Reel Data and Package Dimensions  
TO-220 Tube Packing  
Configuration: Figur e 1.0  
Packaging Description:  
TO-220 parts are shipped normally in tube. The tube is  
made of PVC plastic treated with anti-static agent.These  
tubes in standard option are placed inside  
plastic bag, barcode labeled, and placed inside  
a
dissipative  
box  
a
45 units per Tube  
made of recyclable corrugated paper. One box contains  
two bags maximum (see fig. 1.0). And one or several of  
these boxes are placed inside  
a labeled shipping box  
whic h comes in different sizes dependi ng on the number  
of parts shipped. The other option comes in bulk as  
described in the Packaging Information table. The units in  
this option are placed inside  
static bubble sheet. These smaller boxes are individually  
labeled and placed inside larger box (see fig. 3.0).  
These larger or intermediate boxes then will be placed  
finally inside a labeled shipping box which still comes in  
different sizes depending on the number of units shipped.  
a small box laid with anti-  
a
12 Tubes per Bag  
530mm x 130mm x 83mm  
Intermediate box  
2 bags per Box  
Conduct ive Plastic Bag  
TO-220 Packaging  
Information: Figure 2.0  
FSCINT Label sample  
FAIRCHILD SEMICONDUCTOR CORPORATION  
HTB:B  
QTY:  
1080  
LOT:  
CBVK741B019  
1080 units maximum  
quantity per box  
TO-220 Packaging Information  
NSID:  
D/C1:  
SPEC:  
FDP7060  
Standard  
(no flow code)  
Packaging Option  
S62Z  
SPEC REV:  
QA REV:  
D9842  
B2  
Packaging type  
Rail/Tube  
BULK  
300  
Qty per Tube/Box  
Box Dimension (mm)  
Max qty per Box  
45  
FSCINT Label  
(FSCINT)  
530x130x83 114x102x51  
1,080  
1,500  
Weight per unit (gm)  
1.4378  
1.4378  
Note/Comments  
TO-220 bulk Packing  
Configuration: Figure 3.0  
Anti-static  
530mm x 130mm x 83mm  
Intermediate box  
Bubbl e Sheets  
FSCINT Label  
1500 units maximum  
quantity per intermediate box  
300 units per  
EO70 box  
5 EO70 boxes per per  
Intermediate Box  
114mm x 102mm x 51mm  
EO70 Immediate Box  
FSCINT Label  
TO-220 Tube  
Configuration: Figure 4.0  
0.123  
+0.001  
-0.003  
0.165  
0.080  
Note: All dim ensions are in inches  
0.275  
0.450  
±.030  
9852  
9852  
9852  
9852  
9852  
9852  
9852 9852 9852 9852 9852  
F F F F F  
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L  
9852  
F
F
F
F
F
F
F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L  
1.300  
±.015  
0.160  
0.032  
±.003  
20.000  
+0.031  
-0.065  
0.800  
0.275  
August 1999, Rev. B  
TO-220 Tape and Reel Data and Package Dimensions, continued  
TO-220 (FS PKG Code 37)  
1:1  
Scale 1:1 on letter size paper  
Dimensions shown below are in:  
inches [millimeters]  
Part Weight per unit (gram): 1.4378  
September 1998, Rev. A  
TO-263AB/D2PAK Tape and Reel Data and Package  
Dimensions  
TO-263AB/D2PAK Packaging  
Configuration: Figure 1.0  
Packaging Description:  
TO-263/D2PAK parts are shipped in tape. The carrier tape  
ELECTROSTATIC  
SENSITIVE DEVICES  
is made from  
a dissipative (carbon filled) polycarbonate  
DO NO  
T
S
M
HI  
P
OR  
S
TO  
RE  
N
E
AR  
S
T
RO NG  
E
L
E
CTROS  
T
ATIC  
E
L
E
CTRO  
AGN  
E
TI  
C,  
M
AG NE  
T
IC  
O
R R ADIO ACTIVE FI ELD S  
TNR DATE  
PT NUMB E  
resin. The cover tape is a multilayer film (Heat Activated  
Adhesive in nature) primarily composed of polyester film,  
adhesive layer, sealant, and anti-static sprayed agent.  
These reeled parts in standard option are shipped with  
800 units per 13" or 330cm diameter reel. The reels are  
dark blue in color and is made of polystyrene plastic (anti-  
static coated). This and some other options are further  
described in the Packaging Information table.  
R
PEEL STRENGTH MIN ______________gms  
MAX _____________gms  
Antistatic Cover Tape  
ESD Label  
These full reels are individually barcode labeled, dry  
packed, and placed inside  
a standard intermediate box  
(illustrated in figure 1.0) made of recyclable corrugated  
brown paper. One box contains one reel maximum. And  
these boxes are placed inside a barcode labeled shipping  
box which comes in different sizes depending on the  
number of parts shipped.  
Static Dissipative  
Embossed Carrier Tape  
Moisture Sensitive  
Label  
F63TNR  
Label  
Customized  
Label  
A 3 L 0 B 6 D F  
3 5 9 F 8  
A 3 L 0 B 6 D F  
3 5 9 F 8  
A 3 L 0 B 6 D F  
3 5 9 F 8  
A 3 L 0 B 6 D F  
3 5 9 F 8  
TO-263AB/D2PAK Packaging Information  
Standard  
(no flow code)  
L86Z  
Packaging Option  
TO-263AB/D2PAK Unit Orientation  
Packaging type  
TNR  
800  
Rail/Tube  
Qty per Reel/Tube/Bag  
Reel Size  
45  
-
13" Dia  
Box Dimension (mm)  
Max qty per Box  
Weight per unit (gm)  
Weight per Reel  
359x359x57 530x130x83  
800  
1,080  
1.4378  
-
359mm x 359mm x 57mm  
Standard Intermediate box  
1.4378  
1.6050  
ESD Label  
Note/Comments  
Moisture Sensitive  
Label  
F63TNR Label sample  
F63TNR Label  
LOT: CBVK741B019  
QTY: 800  
SPEC:  
FSID: FDB6320L  
DRYPACK Bag  
D/C1: D9842  
D/C2:  
QTY1:  
QTY2:  
SPEC REV:  
CPN:  
N/F: F  
(F63TNR)3  
TO-263AB/D2PAK Tape Leader and Trailer  
Configuration: Figure 2.0  
Carrier Tape  
Cover Tape  
Components  
Trailer Tape  
Leader Tape  
400mm minimum or  
25 empty pockets  
1520mm minimum or  
95 empty pockets  
September 1999, Rev. B  
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued  
TO-263AB/D2PAK Embossed Carrier Tape  
Configuration: Figure 3.0  
P0  
D0  
T
E1  
E2  
F
W
K0  
Wc  
B0  
Tc  
A0  
D1  
P1  
User Direction of Feed  
Dimensions are in millimeter  
A0  
B0  
W
D0  
D1  
E1  
E2  
F
P1  
P0  
K0  
T
Wc  
Tc  
Pkg type  
TO263AB/  
D2PAK  
(24mm)  
10.60  
+/-0.10  
15.80  
+/-0.10  
24.0  
+/-0.3  
1.55  
+/-0.05  
1.60  
+/-0.10  
1.75  
+/-0.10  
22.25  
min  
11.50  
+/-0.10  
16.0  
+/-0.1  
4.0  
+/-0.1  
4.90  
+/-0.10  
0.450  
+/-0.150  
21.0  
+/-0.3  
0.06  
+/-0.02  
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481  
rotational and lateral movement requirements (see sketches A, B, and C).  
0.9mm  
maximum  
10 deg maximum  
Typical  
component  
cavity  
center line  
0.9mm  
maximum  
B0  
10 deg maximum component rotation  
Typical  
component  
center line  
Sketch A (Side or Front Sectional View)  
Component Rotation  
Sketch C (Top View)  
Component lateral movement  
A0  
Sketch B (Top View)  
Component Rotation  
TO-263AB/D2PAK Reel Configuration:  
Figure 4.0  
W1 Measured at Hub  
Dim A  
Max  
B Min  
Dim C  
Dim A  
max  
Dim D  
min  
Dim N  
DETAIL AA  
See detail AA  
W3  
13" Diameter Option  
W2 max Measured at Hub  
Dimensions are in inches and millimeters  
Reel  
Option  
Tape Size  
Dim A  
Dim B  
Dim C  
Dim D  
Dim N  
Dim W1  
Dim W2  
Dim W3 (LSL-USL)  
13.00  
330  
0.059  
1.5  
512 +0.020/-0.008  
13 +0.5/-0.2  
0.795  
20.2  
4.00  
100  
0.961 +0.078/-0.000  
24.4 +2/0  
1.197  
30.4  
0.941 – 0.1.079  
23.9 – 27.4  
24mm  
13" Dia  
August 1999, Rev. B  
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued  
TO-263AB/D2PAK (FS PKG Code 45)  
1:1  
Scale 1:1 on letter size paper  
Dimensions shown below are in:  
inches [millimeters]  
Part Weight per unit (gram): 1.4378  
August 1998, Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
CoolFET™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench  
QFET™  
SyncFET™  
TinyLogic™  
UHC™  
CROSSVOLT™  
E2CMOSTM  
VCX™  
FACT™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
FASTr™  
GTO™  
HiSeC™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. D  

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FDB8030L

N-Channel Logic Level PowerTrench MOSFET
FAIRCHILD

FDB8030L

N 沟道,PowerTrench® MOSFET,逻辑电平,30V,80A,4.5mΩ
ONSEMI

FDB8030LL86Z

Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
FAIRCHILD

FDB8132

N-Channel PowerTrench? MOSFET 30V, 80A, 1.6mΩ
FAIRCHILD

FDB8132_F085

Power Field-Effect Transistor, 80A I(D), 30V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3
FAIRCHILD

FDB8160

N-Channel PowerTrench? MOSFET 30V, 80A, 1.8mΩ
FAIRCHILD