FDB8030L [ONSEMI]
N 沟道,PowerTrench® MOSFET,逻辑电平,30V,80A,4.5mΩ;型号: | FDB8030L |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,逻辑电平,30V,80A,4.5mΩ |
文件: | 总6页 (文件大小:305K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
• 80 A, 30 V.
R
DS(ON) = 0.0035 Ω @ VGS = 10 V
RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
• Critical DC electrical parameters specified at
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
elevated temperature
R
DS(on) specifications.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
D
D
G
G
G
S
TO-263AB
FDB Series
TO-220
FDP Series
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
VGSS
ID
Gate-Source Voltage
V
A
±20
80
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
300
PD
187
W
W°C
°C
Total Power Dissipation @ TC = 25°C
1.25
Derate above 25°C
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
-65 to +175
275
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.8
RθJC
°C/W
°C/W
62.5
RθJA
Publication Order Number:
FDP8030L/D
2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 20 V,
ID = 80 A
1500
80
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V, ID = 250 µA
Breakdown Voltage Temperature
Coefficient
∆BVDSS
∆TJ
23
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
V
V
DS = 24 V,
GS = 20 V,
GS = –20 V
V
GS = 0 V
DS = 0 V
VDS = 0 V
10
µA
nA
nA
IGSSF
IGSSR
V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.5
–5
2
V
V
DS = VGS, ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 80 A
TJ=125°C
3.1
4.0
3.5
5.6
VGS = 4.5 V,
VGS = 10 V,
VDS = 10 V,
ID = 70 A
VDS = 10 V
ID = 80 A
3.6
4.5
ID(on)
gFS
On–State Drain Current
60
A
S
Forward Transconductance
170
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
10500
2700
1650
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
tD(on)
tr
tD (off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
20
185
160
200
120
27
35
ns
ns
V
V
DD = 15 V,
GS = 4.5 V,
ID = 50 A,
GEN = 10 Ω
R
225
200
240
170
RGS = 10 Ω
ns
ns
Qg
nC
nC
nC
V
DS = 15 V,
ID = 80 A, VGS = 5 V
Qgs
Qgd
48
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current (Note 1)
Maximum Pulsed Drain-Source Diode Forward Current
Drain–Source Diode Forward Voltage GS = 0 V, IS = 80 A (Note 1)
80
300
1.3
A
A
V
ISM
VSD
(Note 1)
V
1
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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2
Typical Characteristics
3
2.5
2
100
3.0V
4.5V
80
VGS= 2.5V
3.5V
60
3.0V
1.5
1
3.5V
40
4.5V
2.5V
6.0V
80
10V
20
0
0.5
0
20
40
60
100
120
0
0.5
1
1.5
2
I
, DRAIN CURRENT (A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.01
ID = 40A
1.6
1.4
1.2
1
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
ID = 80A
VGS = 10V
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
T
25
50
75
100
125
150
2
3
4
5
6
7
8
, JUNCTION TEMPERATURE (°C)
J
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
50
40
30
20
10
0
60
VDS = 10V
10
1
T = 125°C
A
T
= 125°C
A
25°C
25°C
-55°C
0.1
-55°C
0.01
0.001
0.0001
VGS = 0V
1.2
1
2
3
4
V
, GATE TO SOURCE VOLTAGE (V)
GS
0
0.2
0.4
0.6
0.8
1
1.4
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
10
18000
10000
ID = 80A
VDS = 5V
10V
15V
C
iss
8
6
4
2
0
5000
C
oss
2000
1000
500
C
rss
VGS = 0V
0.1
0.5
1
2
5
10
30
0
40
80
Q
120
160
200
240
V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
DS
g
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5000
4000
3000
2000
1000
0
600
100
SINGLE PULSE
R θJC = 0.8°C/W
TC = 25°C
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
10
1
SINGLE PULSE
TJ = MAX RATED
θJC = 0.8oC/W
TC = 25 oC
10 ms
100 ms
DC
R
CURVE BENT TO
MEASURED DATA
0.1
1
10
100
0.1
0.3
1
3
10
30
100
300
1,000
V
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (mSEC)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.5
0.3
0.2
R
(t) = r(t) * R
JC
θ
JC
θ
R
= 0.8 °C/W
JC
θ
0.1
0.1
P(pk)
0.05
0.05
t
1
0.02
0.01
t
0.03
0.02
2
T - T = P * R
θJC
Duty Cycle, D = t /t
(t)
J
C
Single Pulse
1
2
0.005
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
t
,TIME (ms)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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