FDC6306PL99Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6;
| 型号： | FDC6306PL99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 |
| 文件： | 总5页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 1999
FDC6306P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Features
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
• -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V
RDS(on) = 0.250Ω @ VGS = -2.5 V
• Low gate charge (3 nC typical).
• Fast switching speed.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
• High performance trench technology for extremely
low RDS(ON)
.
TM
• SuperSOT -6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
• Load switch
• Battery protection
• Power management
D2
S1
3
2
1
4
5
6
D1
G2
S2
SuperSOTTM-6
G1
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
A
8
±
(Note 1a)
Drain Current - Continuous
- Pulsed
-1.9
-5
(Note 1a)
(Note 1b)
PD
Power Dissipation for Single Operation
0.96
0.9
W
(Note 1c)
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
130
60
C/W
C/W
JA
°
°
JC
θ
Package Outlines and Ordering Information
Device Marking
306
Device
Reel Size
Tape Width
Quantity
3000 units
FDC6306P
7’’
8mm
.
1999 Fairchild Semiconductor Corporation
FDC6306P Rev. C
TA = 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
A
-20
V
µ
DSS
Breakdown Voltage Temperature
Coefficient
ID = -250 A, Referenced to 25 C
-18
mV/ C
BV
∆
µ
°
°
∆
TJ
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
A
µ
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
nA
nA
(Note 2)
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
A
-0.4
-0.9
3
-1.5
V
µ
GS(th)
Gate Threshold Voltage
Temperature Coefficient
ID = -250 A, Referenced to 25 C
mV/ C
V
µ
°
°
∆
TJ
∆
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -1.9 A
0.127 0.170
0.182 0.270
0.194 0.250
Ω
V
V
GS = -4.5 V, ID = -1.9 A @125 C
GS = -2.5 V, ID = -1.7 A
°
ID(on)
gFS
On-State Drain Current
VGS = -4.5 V, VDS =- 5 V
-5
A
S
Forward Transconductance
VDS = -5 V, ID = -1.9 A
4
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
V
DS = -10 V, VGS = 0 V,
441
127
67
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
DD = -10 V, ID = -1 A,
GS = -4.5 V, RGEN = 6
6
9
12
18
25
9
ns
ns
Ω
14
3
ns
ns
Qg
Qgs
Qgd
V
V
DS = -10 V, ID = -1.9 A,
GS = -4.5 V
3
4.2
nC
nC
nC
0.7
0.8
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.8
-1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A
-0.8
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
a) 130 °C/W when
b) 140 °C/W when
c) 180 °C/W when
mounted on a 0.125 in2
pad of 2 oz. copper.
mounted on a 0.005 in2
pad of 2 oz. copper.
mounted on a 0.0015 in2
pad of 2 oz. copper.
Scale
1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDC6306P Rev. C
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
12
V GS= -4 .5 V
-4.0V
10
-3 .5 V
VGS = -2.5 V
8
6
4
2
0
-3 .0 V
-3.0V
-2 .5 V
-3.5V
-4.0V
6
-4.5V
-2 .0 V
0.8
0
2
4
8
10
0
1
2
3
4
5
- I , DRAIN CURRENT (A)
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.5
ID = -1 .9 A
ID = -1A
VGS= -4.5V
0.4
0.3
0.2
0.1
0
T
= 125°C
J
0.8
0.6
25°C
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
-V
, GATE TO SOURCE VOLT AG E (V)
T , JUNCTION TEMPERATURE (°C)
GS
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
10
VDS = -5V
VGS = 0V
T = -55°C
J
25°C
125°C
8
6
4
2
0
1
T = 125°C
J
25 °C
0.1
-55°C
0.01
0.001
0.0001
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V , GATE TOSOURCE VOLTAGE (V)
GS
-V , BODY DI ODE FORWARD VOLT AGE (V )
SD
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6306P Rev. C
Typical Characteristics (continued)
1000
5
I D = -1.9A
VDS = -5V
4
-10V
C
iss
300
100
-15V
3
2
1
0
C
oss
C
rss
f = 1 MHz
VGS = 0 V
30
0.1
0
1
2
3
4
0.2
0.5
1
2
5
10
20
Q
, GAT E CHARGE (nC)
g
-V , DRAIN TOSOURCE VOLTAGE (V)
DS
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
5
4
3
2
1
30
10
SINGLE PULSE
RθJA=180°C/W
TA= 25°C
3
1
0.3
0.1
VGS = -4.5V
SINGLE PULSE
Rθ
= 180°C/W
JA
0.03
0.01
TA = 25°C
0
0.01
0.1
1
10
100
300
0.1
0.2
0.5
1
2
5
10
20
50
SINGLE PULSE TIME (SEC)
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
θ
JA
θ
R
=180°C/W
JA
θ
0.2
0.2
0.1
P(pk)
0.1
0.05
t
1
0.05
t
2
0.02
0.01
T
- T = P * R
(t)
JA
J
A
θ
Single Pulse
0.02
Duty Cycle, D = t / t
2
1
0.01
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDC6306P Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
CROSSVOLT™
E2CMOSTM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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