FDC654P_NL
更新时间：2024-09-18 16:37:02
品牌：FAIRCHILD
描述：Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
概述
规格参数
数据手册FDC654P_NL 概述
Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 小信号场效应晶体管
FDC654P_NL 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 零件包装代码： | SOT | 包装说明： | SMALL OUTLINE, R-PDSO-G6 |
| 针数： | 6 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | 风险等级： | 5.23 |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 3.6 A | 最大漏极电流 (ID)： | 3.6 A |
| 最大漏源导通电阻： | 0.075 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PDSO-G6 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 6 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | P-CHANNEL |
| 最大功率耗散 (Abs)： | 1.6 W | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
FDC654P_NL 数据手册
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PDF下载May 2003
FDC654P
Single P-Channel Logic Level PowerTrenchÒ MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
·
–3.6 A, –30 V. RDS(ON) = 75 mW @ VGS = –10 V
RDS(ON) = 125 mW @ VGS = –4.5 V
·
·
Low gate charge (6.2 nC typical)
Applications
High performance trench technology for extremely
low RDS(ON)
·
·
·
Battery management
Load switch
Battery protection
S
D
1
2
3
6
5
4
D
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–30
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
±20
–3.6
(Note 1a)
–10
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
RqJA
°C/W
°C/W
RqJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.654
FDC654P
7’’
8mm
3000 units
FDC654P Rev E1 (W)
Ó2003 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–30
V
VGS = 0 V, ID = –250 mA
Breakdown Voltage Temperature
Coefficient
–22
DBVDSS
DTJ
ID = –250 mA,Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –24 V, VGS = 0 V
–1
mA
nA
nA
IGSSF
IGSSR
VGS = 20 V,
VDS = 0 V
100
VGS = –20 V, VDS = 0 V
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–1
–5
–1.9
4
–3
V
VDS = VGS, ID = –250 mA
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
ID = –250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
VGS = –4.5 V,
ID = –3.6 A
ID = –2.7 A
63
100
90
75
125
115
mW
VGS = –10 V, ID = –3.6A,TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
ID = –3.6 A
A
S
Forward Transconductance
6
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
298
83
pF
pF
pF
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
39
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
13
11
6
12
23
20
12
9
ns
ns
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 W
ns
ns
Qg
Qgs
Qgd
6.2
1
nC
nC
nC
VDS = –15 V,
VGS = –10 V
ID = –3.6 A,
1.2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–0.8
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
78°C/W when
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
mounted on a 1in2 pad
of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDC654P Rev E1(W)
Typical Characteristics
15
2
1.8
1.6
1.4
1.2
1
VGS = -10V
-6.0V
-5.0V
12
9
-4.5V
VGS = -3.5V
-4.0V
-4.0V
-4.5V
6
-5.0V
-3.5V
-6.0V
0.8
0.6
0.4
-7.0V
12
3
-10V
-3.0V
0
0
1
2
3
4
5
0
3
6
9
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.3
ID = -3.6A
VGS = -10V
ID = -1.8A
0.25
0.2
TA = 125oC
0.15
0.1
0.8
0.6
TA = 25oC
0.05
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
10
VGS = 0V
TA = -55oC
VDS = -5.0V
25oC
125oC
1
TA = 125oC
6
0.1
25oC
4
0.01
0.001
-55oC
2
0
0.0001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC654P Rev E1(W)
Typical Characteristics
10
400
300
200
100
0
f = 1 MHz
VGS = 0 V
VDS = -5V
ID = -3.6A
-10V
CISS
8
6
4
2
0
-15V
COSS
CRSS
0
1
2
3
4
5
6
7
0
6
12
18
24
30
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
10
8
SINGLE PULSE
RqJA = 156°C/W
TA = 25°C
RDS(ON) LIMIT
10ms
100ms
1ms
6
10ms
100ms
1s
1
4
VGS = -10V
DC
SINGLE PULSE
RqJA = 156oC/W
TA = 25oC
0.1
0.01
2
0
0.1
1
10
100
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + RqJA
R
qJA = 156oC/W
0.2
P(pk)
0.1
0.1
t1
0.05
t2
0.02
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
100 1000
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC654P Rev E1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarksꢀ
ACEx
PACMAN
POP
Power247
PowerTrench
QFET
QS
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
FACT
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT Quiet Series
â
FAST
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
SyncFET
â
QT Optoelectronics TinyLogic
Quiet Series
RapidConfigure
RapidConnect
TruTranslation
UHC
UltraFET
MSXPro
OCX
â
OCXPro
OPTOLOGIC
Across the boardꢀAround the worldꢀ
The Power Franchise
ProgrammableActive Droop
â
â
SILENT SWITCHER VCX
SMARTSTART
OPTOPLANAR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ
As used herein:
1ꢀ Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
userꢀ
2ꢀ A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectivenessꢀ
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
designꢀ
No Identification Needed
Obsolete
Full Production
This datasheet contains final specificationsꢀ Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve designꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductorꢀ
The datasheet is printed for reference information onlyꢀ
Revꢀ I2
FDC654P_NL 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FDC655AN | FAIRCHILD | Single N-Channel, Logic Level, PowerTrenchTM MOSFET | 获取价格 |
|
| FDC655AND84Z | FAIRCHILD | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | 获取价格 |
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| FDC655AND87Z | FAIRCHILD | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | 获取价格 |
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| FDC655ANL99Z | FAIRCHILD | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | 获取价格 |
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| FDC655ANS62Z | FAIRCHILD | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | 获取价格 |
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| FDC655AN_NL | FAIRCHILD | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | 获取价格 |
|
| FDC655BN | FAIRCHILD | Single N-Channel, Logic Level, PowerTrench MOSFET | 获取价格 |
|
| FDC655BN | ONSEMI | N 沟道，PowerTrench® MOSFET，逻辑电平，30 V，6.3 A，25 mΩ | 获取价格 |
|
| FDC655BN-F40 | ONSEMI | N 沟道，PowerTrench® MOSFET，逻辑电平，30 V，6.3 A，25 mΩ | 获取价格 |
|
| FDC655BN_NL | FAIRCHILD | 暂无描述 | 获取价格 |
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