FDC655BN [ONSEMI]
N 沟道，PowerTrench® MOSFET，逻辑电平，30 V，6.3 A，25 mΩ;
| 型号： | FDC655BN |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，逻辑电平，30 V，6.3 A，25 mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDC655BN
Single N-Channel, Logic Level, PowerTrench® MOSFET
30 V, 6.3 A, 25 mΩ
Features
General Description
Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.3 A
Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
Fast switching
This N-Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-
state resistance and yet maintain superior switching
performance.
Low gate charge
These devices are well suited for low voltage and battery
powered applicatoins where low in-line power loss and fast
switching are required.
High performance trchnology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
D
D
S
D
D
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
TA = 25°C
(Note 1a)
6.3
ID
A
20
( Note 1a)
(Note 1b)
1.6
PD
W
0.8
TJ, TSTG
-55 to + 150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
SSOT-6TM
Reel Size
7 ’’
Tape Width
8 mm
Quantity
.55B
FDC655BN
3000 units
©2010 Semiconductor Components Industries, LLC.
October-2017, Rev.3
Publication Order Number:
1
FDC655BN/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 µA, referenced to 25°C
25
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1
1.9
-5
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 µA, referenced to 25°C
mV/°C
V
GS = 10 V, ID = 6.3 A
21
26
30
35
25
33
36
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 5.5 A
mΩ
VGS = 10 V, ID = 6.3 A, TJ = 125°C
VDS = 10 V, ID = 6.3 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
470
100
60
620
130
90
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3.0
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
2
11
10
26
10
13
7
ns
ns
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
15
2
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
9
nC
nC
nC
nC
Qg
VGS = 0 V to 5 V
5
VDD = 15 V,
ID = 6.3 A
Qgs
Qgd
1.4
1.6
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
1.3
1.2
26
A
V
VSD
trr
Source-Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 1.3 A
(Note 2)
0.8
15
4
ns
nC
IF = 6.3 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
10
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
2
a. 78 °C/W when mounted on a 1 in pad of 2 oz copper on FR-4 board.
b. 156 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
20
5
4
3
2
1
0
VGS = 10 V
VGS = 6 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 4.5 V
16
VGS = 3 V
12
8
VGS = 3.5 V
VGS = 4.5 V
VGS = 3 V
4
VGS = 10 V
PULSE DURATION = 80 µs
VGS = 6 V
12
DUTY CYCLE = 0.5% MAX
0
0
4
8
16
20
0
0.5
1.0
1.5
2.0
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
90
ID = 6.3 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
70
60
50
40
30
20
10
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
ID = 6.3 A
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
100
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
16
12
8
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
1
TJ = 25 o
C
TJ = 25 o
C
0.1
4
TJ = -55 o
C
TJ = -55 o
C
0
1.0
0.01
1.5
2.0
2.5
3.0
3.5
4.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
1000
100
10
ID = 6.3 A
Ciss
8
VDD = 10 V
6
Coss
VDD = 15 V
4
VDD = 20 V
Crss
2
0
f = 1 MHz
= 0 V
V
GS
0.1
1
10
30
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
100
1000
100
10
THIS AREA IS
LIMITED BY r
DS(on)
VGS = 10 V
10
1
1 ms
SINGLE PULSE
RθJA = 156 oC/W
TA = 25 oC
10 ms
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
RθJA = 156 oC/W
0.1
1
10 s
DC
TA = 25 o
C
0.01
0.1
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure10. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
RθJA = 156 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
0.001
DM
θJA
0.0003
10-4
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
www.onsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FDC6561AND87Z
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明