FDD3680_NL [FAIRCHILD]
Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3;
| 型号： | FDD3680_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2001
FDD3680
100V N-Channel PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
· 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V
RDS(ON) = 51 mW @ VGS = 6 V
· Low gate charge (38 nC typical)
· Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
· High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
· High power and current handling capability.
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
100
VGSS
ID
Gate-Source Voltage
V
A
±20
Drain Current – Continuous
Drain Current – Pulsed
Maximum Power Dissipation
(Note 1)
25
100
PD
(Note 1)
68
W
(Note 1a)
3.8
(Note 1b)
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
2.2
96
RqJC
°C/W
°C/W
(Note 1b)
RqJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
16mm
Quantity
FDD3680
FDD3680
13’’
2500 units
Ó2001 Fairchild Semiconductor Corporation
FDD3680 Rev B1(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
VDD = 50 V,
ID = 6.1 A
245
6.1
mJ
A
Off Characteristics
Drain–Source Breakdown
Voltage
BVDSS
100
V
VGS = 0 V,
ID = 250 mA
Breakdown Voltage Temperature
Coefficient
–101
DBVDSS
DT
J
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = 80 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
10
mA
nA
nA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 20 V,
VGS = –20 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
2
2.4
4
V
DVGS(th)
DT
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 mA, Referenced to 25°C
–6.5
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 10 V,
VGS = 6 V,
ID = 6.1 A
ID = 6.1 A, TJ = 125°C
ID = 5.8 A
32
61
34
46
92
51
mW
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V,
VDS = 5 V
ID = 6.1 A
25
A
S
Forward Transconductance
25
Dynamic Characteristics
C
iss
Input Capacitance
VDS = 50 V,
f = 1.0 MHz
V GS = 0 V,
1735
176
53
pF
pF
pF
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = 50 V,
VGS = 10 V,
ID = 1 A,
RGEN = 10 W
14
8.5
63
25
17
94
34
53
ns
ns
ns
21
ns
Qg
VDS = 50 V,
VGS = 10 V
ID = 6.1 A,
38
nC
nC
nC
Qgs
Qgd
8.1
9.2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.9
1.3
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V,
IS = 2.9 A (Note 2)
0.73
Voltage
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. qJC is guaranteed by design while Rq CA is determined by the user's board design.
R
o
b) RqJA= 96 C/W on a
minimum mounting pad.
o
RqJA= 40 C/W when
a)
2
mounted on a 1in pad of
2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDD3680 Rev B1(W)
Typical Characteristics
1.8
1.6
1.4
1.2
1
40
VGS = 10V
5V
4.5V
30
20
10
0
4V
VGS =4.0V
4.5V
5.0V
6.0
10V
3.5V
0.8
0
10
20
30
40
50
60
0
2
4
6
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.6
0.12
ID = 6.1A
ID = 3.0A
VGS = 10V
2.2
1.8
1.4
1
0.08
0.04
0
TA = 125oC
TA = 25oC
0.6
0.2
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
30
20
10
0
VGS = 0V
VDS =5V
10
1
TA = 125oC
25oC
125oC
-55oC
TA = -55oC
0.1
25oC
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD3680 Rev B1(W)
Typical Characteristics
10
3000
2500
2000
1500
1000
500
f = 1MHz
VGS = 0
ID = 6.1A
VDS = 15V
30V
8
6
4
2
0
50V
CISS
COSS
CRSS
40
0
0
5
10
15
20
25
30
35
40
0
20
60
80
100
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
40
30
20
10
0
SINGLE PULSE
RqJA = 96°C/W
TA = 25°C
100
10
RDS(ON) LIMIT
100ms
1ms
10ms
100ms
1s
1
10s
DC
VGS = 10V
SINGLE PULSE
R JA = 96oC/W
0.1
q
TA = 25oC
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
VDS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
RqJA (t) = r(t) + RqJA
RqJA = 96°C/W
0.1
0.1
0.05
0.02
P(pk
)
t1
0.01
0.01
t2
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
100
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD3680 Rev B1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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