FDD6530A_NL [FAIRCHILD]
Power Field-Effect Transistor, 21A I(D), 20V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3;型号: | FDD6530A_NL |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Field-Effect Transistor, 21A I(D), 20V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 开关 脉冲 晶体管 |
文件: | 总5页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
July 2001
FDD6530A
20V N-Channel PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
·
21 A, 20 V
RDS(ON) = 32 mW @ VGS = 4.5 V
RDS(ON) = 47 mW @ VGS = 2.5 V
·
·
·
Low gate charge (6.5 nC typical)
Fast switching
Applications
High performance trench technology for extremely
low RDS(ON)
·
·
DC/DC converter
Motor drives
.
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
20
V
V
A
VGSS
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±8
ID
(Note 3)
(Note 1a)
(Note 1)
21
100
PD
W
Power Dissipation
33
(Note 1a)
(Note 1b)
3.3
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
4.5
45
96
RqJC
RqJA
RqJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6530A
FDD6530A
13’’
16mm
2500 units
FDD6630A Rev C (W)
Ó2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 10 V
55
8
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250 mA
20
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
15
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 16 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
1
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
0.4
20
0.9
–3
1.2
V
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
VGS = 2.5 V,
VGS = 4.5 V, ID = 8 A, TJ = 125°C
ID = 8 A
ID = 6.6 A
26
36
36
32
47
48
mW
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
A
S
Forward Transconductance
VDS = 5 V,
ID = 8 A
21
Dynamic Characteristics
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
Ciss
Coss
Crss
Input Capacitance
710
173
84
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
7
16
14
32
8
ns
ns
18
4
ns
ns
VDS = 10 V,
VGS = 4.5 V
ID = 8 A,
Qg
Qgs
Qgd
6.5
1.3
1.9
9
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.7
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.7 A
(Note 2)
0.8
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
R
qJA = 45°C/W when mounted on a
b)
R
qJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
D
P
3. Maximum current is calculated as:
DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6530A Rev. C (W)
Typical Characteristics
30
1.8
1.6
1.4
1.2
1
VGS = 4.5V
3.0V
3.5V
24
2.5V
VGS = 2.5V
18
12
6
3.0V
3.5V
2.0V
4.0V
4.5V
0.8
0
0
6
12
18
24
30
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.8
1.6
1.4
1.2
1
ID = 4 A
ID = 8 A
VGS = 4.5V
0.09
TA = 125oC
0.06
TA = 25oC
0.03
0.8
0.6
0
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
15
VGS = 0V
VDS = 5V
TA =-55oC
25oC
125oC
10
TA = 125oC
12
9
1
25oC
0.1
-55oC
6
0.01
0.001
3
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6530A Rev. C (W)
Typical Characteristics
5
1200
1000
800
600
400
200
0
ID = 8 A
VDS = 5V
10V
f = 1MHz
VGS = 0 V
4
3
2
1
0
15V
CISS
COSS
CRSS
0
4
8
12
16
20
0
2
4
6
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
100
80
60
40
20
0
SINGLE PULSE
R
qJA = 96°C/W
TA = 25°C
100ms
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
R
qJA = 96oC/W
TA = 25oC
0.1
1
10
100
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
qJA(t) = r(t) + RqJA
RqJA = 96 °C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6530A Rev. C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
STAR*POWER™
Stealth™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
EcoSPARK™
E2CMOSTM
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
EnSignaTM
UltraFET
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
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NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
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