FDD6606 [FAIRCHILD]
30V N-Channel PowerTrench MOSFET; 30V N沟道PowerTrench MOSFET的
| 型号： | FDD6606 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench MOSFET |
| 文件： | 总6页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2004
FDD6606
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
• 75 A, 30 V
RDS(ON) = 6 mΩ @ VGS = 10 V
RDS(ON) = 8 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• Motor Drives
D
D
G
G
S
D-PAK
(TO-252)
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
ID
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
75
100
71
A
PD
W
(Note 1a)
(Note 1b)
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
RθJC
RθJA
RθJA
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
12mm
Quantity
2500 units
FDD6606
FDD6606
D-PAK (TO-252)
13’’
FDD6606 Rev B (W)
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID = 17 A
240
17
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA
∆BVDSS
Breakdown Voltage Temperature
20
ID = 250 µA, Referenced to 25°C
mV/°C
Coefficient
∆TJ
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
DS = 24 V,
VGS = 0 V
VDS = 0 V
10
±100
µA
nA
VGS = ± 20 V,
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.9
–7
3
V
V
DS = VGS
,
ID = 250 µA
Gate Threshold Voltage
∆VGS(th)
ID = 250 µA, Referenced to 25°C
mV/°C
Temperature Coefficient
∆TJ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V, ID = 17 A, TJ=125°C
ID = 17 A
ID = 15 A
5
6
8
6.0
8.0
11.9
mΩ
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = 10 V,
VDS = 5 V,
VDS = 5 V
ID = 17 A
50
A
S
65
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
2400
577
258
1.4
pF
pF
pF
Ω
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
14
12
38
18
24
10
11
20
37
64
32
31
ns
ns
ns
VDD = 15 V,
ID = 1 A,
RGEN = 6 Ω
V
V
GS = 10 V,
DS = 15V,
ns
Qg
Qgs
Qgd
nC
nC
nC
ID = 17 A,
VGS = 5 V
FDD6606 Rev B (W)
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.2
1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 3.2 A
(Note 2)
0.7
Voltage
trr
Diode Reverse Recovery Time
IF = 17 A, diF/dt = 100 A/µs
32
20
nS
nC
Qrr
Diode Reverse Recovery Charge
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
R
θJA = 40°C/W when mounted on a
b)
R
θJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
PD
RDS(ON)
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6606 Rev B (W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
100
VGS = 3.5V
VGS=10V
4.0V
4.5V
80
60
4.0V
3.5V
4.5V
5.0V
40
20
0
10V
3.0V
0.8
0
20
40
ID, DRAIN CURRENT (A)
60
80
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.8
1.6
1.4
1.2
1
0.02
ID = 8.5A
ID = 17A
VGS = 10V
0.015
0.01
0.005
0
TA = 125oC
TA = 25oC
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
100
VGS = 0V
VDS = 5V
10
1
60
40
20
0
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
TA =125oC
25oC
-55oC
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6606 Rev B (W)
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
f = 1MHz
GS = 0 V
VDS = 10V
ID = 17A
V
CISS
15V
8
6
4
2
0
20V
COSS
CRSS
0
0
5
10
15
20
25
30
0
10
20
Qg, GATE CHARGE (nC)
30
40
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
1000
100
10
SINGLE PULSE
R
θJA = 96°C/W
100µs
1ms
T
A = 25°C
RDS(ON) LIMIT
10ms
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
R
θJA = 96oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
R
θJA(t) = r(t) * RθJA
0.2
RθJA = 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6606 Rev B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I8
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