FDD6635 [ONSEMI]
N 沟道，PowerTrench® MOSFET，35V，59A，10mΩ;
| 型号： | FDD6635 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，35V，59A，10mΩ 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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March 2015
FDD6635
35V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
•
59 A, 35 V
RDS(ON) = 10 mΩ @ VGS = 10 V
RDS(ON)
Ω @ VGS
= 13 m = 4.5 V
•
•
Fast Switching
RoHS compliant
Applications
• Inverter
• Power Supplies
D
D
G
G
S
D-PAK
(TO-252)
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
35
V
V
V
A
VDS(Avalanche)
VGSS
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
40
±20
ID
Continuous Drain Current @TC=25°C
@TA=25°C
(Note 3)
(Note 1a)
(Note 1a)
(Note 5)
(Note 3)
59
15
Pulsed
100
EAS
PD
Single Pulse Avalanche Energy
113
mJ
W
Power Dissipation
@TC=25°C
@TA=25°C
@TA=25°C
55
(Note 1a)
(Note 1b)
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.7
40
96
RθJC
RθJA
RθJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
16mm
Quantity
FDD6635
FDD6635
D-PAK (TO-252)
13’’
2500 units
©2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDD6635 Rev. 1.2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics(Note 2)
BVDSS
Drain–Source Breakdown Voltage
35
V
VGS = 0 V,
ID = 250 μA
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
32
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 28 V,
VGS = 0 V
VDS = 0 V
1
μA
IGSS
nA
VGS = ±20 V,
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.9
–5
3
V
VDS = VGS
,
ID = 250 μA
Gate Threshold Voltage
Temperature Coefficient
ΔVGS(th)
ΔTJ
RDS(on)
ID = 250 μA, Referenced to 25°C
mV/°C
mΩ
8.2
10.2
12.4
10
13
16
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V, ID = 13 A
VGS = 10 V,
VDS = 5 V,
ID = 15 A
ID = 15 A, TJ=125°C
ID = 15 A
gFS
Forward Transconductance
53
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1400
317
137
1.4
pF
pF
pF
Ω
VDS = 20 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
11
6
20
12
45
25
36
18
ns
ns
Turn–On Rise Time
VDD = 20 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
Turn–Off Delay Time
Turn–Off Fall Time
28
14
26
13
3.9
5.3
ns
ns
Qg (TOT)
Qg
Total Gate Charge, VGS = 10V
Total Gate Charge, VGS = 5V
Gate–Source Charge
Gate–Drain Charge
nC
nC
nC
nC
VDS = 20 V, ID = 15 A
Qgs
Qgd
FDD6635 Rev. 1.2
www.fairchildsemi.com
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 15 A
(Note 2)
0.8
1.2
V
trr
IF = 15 A, diF/dt = 100 A/µs
26
16
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Qrr
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
5. Starting TJ = 25°C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V
FDD6635 Rev. 1.2
www.fairchildsemi.com
Typical Characteristics
80
2.4
2.2
2
VGS=10V
6.0V
4.0V
70
60
50
40
30
20
10
0
4.5V
VGS = 3.5V
3.5V
1.8
1.6
1.4
1.2
1
4.0V
4.5V
5.0V
3.0V
6.0V
10V
0.8
0
10
20
30
40
50
60
70
80
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1
0.029
ID = 7.5A
ID = 15A
VGS = 10V
0.025
0.021
0.017
0.013
0.009
0.005
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
80
VDS = 5V
VGS = 0V
25oC
70
60
50
40
30
20
10
0
10
1
TA =-55oC
TA = 125oC
125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
4.5
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6635 Rev. 1.2
www.fairchildsemi.com
Typical Characteristics
2000
1600
1200
800
400
0
10
f = 1MHz
VGS = 0 V
ID = 15A
VDS = 10V
15V
8
6
4
2
0
CISS
20V
COSS
CRSS
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
10
100
80
60
40
20
0
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
RDS(ON) LIMIT
100µs
1ms
10ms
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
100
1000
SINGLE PULSE
RθJA = 96癈/W
TA = 25癈
80
60
40
20
0
TJ = 25oC
100
10
1
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
t1, TIME (sec)
tAV, TIME IN AVANCHE(ms)
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
FDD6635 Rev. 1.2
www.fairchildsemi.com
Typical Characteristics
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.0
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6635 Rev. 1.2
www.fairchildsemi.com
Test Circuits and Waveforms
L
BVDSS
VDS
tP
VGS
VDS
VDD
RGEN
+
-
DUT
IAS
VDD
0V
VGS
vary tP to obtain
IAS
tp
0.01Ω
required peak IAS
tAV
Figure 14. Unclamped Inductive Load Test
Circuit
Figure 15. Unclamped Inductive Waveforms
Drain Current Regulator
Same type as DUT
QG
+
10V
10V
50kΩ
10μF
-
1μF
+
-
QGD
QGS
VGS
VDD
VGS
DUT
Charge, (nC)
Ig(REF)
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveform
RL
tON
tOFF
VDS
td(ON)
td(OFF)
tf
tr
VDS
+
VGS
90%
90%
RGEN
DUT
VDD
-
10%
10%
0V
VGS
Pulse Width ≤ 1μs
Duty Cycle ≤ 0.1%
90%
50%
VGS
50%
Pulse Width
10%
0V
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
FDD6635 Rev. 1.2
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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