FDD6670 [FAIRCHILD]
N-Channel, Logic Level, PowerTrench MOSFET; N沟道逻辑电平的PowerTrench MOSFET
| 型号： | FDD6670 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel, Logic Level, PowerTrench MOSFET |
| 文件： | 总8页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2000
FDD6670A
N-Channel, Logic Level, PowerTrench MOSFET
Features
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
• 66 A, 30 V. RDS(on) = 0.008 Ω @ VGS = 10 V
RDS(on) = 0.010 Ω @ VGS = 4.5 V.
• Low gate charge (35nC typical).
• Fast switching speed.
Applications
• High performance trench technology for extremely
low RDS(on)
.
• DC/DC converter
• Motor drives
D
D
G
G
S
S
TO-252
TC=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
VGSS
ID
Gate-Source Voltage
20
V
A
±
(Note 1)
Maximum Drain Current -Continuous
66
TA = 25oC
Maximum Drain Current -Pulsed
Maximum Power Dissipation
TC = 25oC
15
100
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
PD
70
W
TA = 25oC
TA = 25oC
3.2
1.3
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
(Note 1)
(Note 1a)
(Note 1b)
R
Thermal Resistance, Junction-to-Case
1.8
40
96
C/W
C/W
C/W
θJC
°
°
°
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6670A
FDD6670A
13’’
16mm
2500
2000 Fairchild Semiconductor Corporation
FDD6670A, Rev. C
TA = 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
(Note 2)
Drain-Source Avalanche ratings
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
VDD = 15 V, ID = 66 A
400
66
mJ
A
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 250
A
30
V
µ
Voltage
DSS
Breakdown Voltage
Temperature Coefficient
ID = 250 A, Referenced to 25 C
25
mV/ C
BV
∆
µ
°
°
∆
TJ
IDSS
Zero Gate Voltage Drain
Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VDS = 24 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20 V, VDS = 0 V
1
A
µ
IGSSF
IGSSR
100
-100
nA
nA
(Note 2)
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
A
1
1.6
-4
3
V
µ
GS(th)
Gate Threshold Voltage
Temperature Coefficient
ID = 250 A, Referenced to 25 C
mV/ C
V
µ
°
°
∆
TJ
∆
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 15 A
0.0065 0.008
0.0090 0.013
0.0085 0.010
Ω
V
V
GS = 10 V, ID = 15 A,TJ=125 C
GS = 4.5 V, ID =13 A
°
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
50
A
S
Forward Transconductance
VDS = 5 V, ID = 12 A
55
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
3200
820
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
400
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
15
15
85
42
35
9
27
27
ns
ns
Ω
105
68
ns
ns
Qg
Qgs
Qgd
V
DS = 15 V, ID = 15 A,
50
nC
nC
nC
VGS = 5 V,
16
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.3
1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A
0.72
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
o
o
b) RθJA= 96 C/W when mounted
a) RθJA= 40 C/W when mounted
2
on a minimum pad .
on a 1in pad of 2oz copper.
Scale
1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD6670A, Rev. C
Typical Characteristics
2.2
2
50
VGS = 10V
4.5V
40
VGS = 3.0V
3.5V
1.8
1.6
1.4
1.2
1
3.0V
30
3.5V
20
10
0
4.0V
4.5V
6.0V
10V
0.8
0
1
2
3
4
5
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
0.025
0.02
0.015
0.01
0.005
0
1.6
ID = 15A
ID = 8 A
VGS = 10V
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
10
60
50
40
30
20
10
0
VGS = 0V
VDS = 5V
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
125oC
2
25oC
2.5
TA = -55oC
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
3
3.5
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 5. Transfer Characteristics.
FDD6670A, Rev. C
Typical Characteristics (continued)
10
5000
4000
3000
2000
1000
0
f = 1MHz
VGS = 0 V
ID = 15A
VDS = 5V
15V
8
10V
CISS
6
4
2
0
COSS
CRSS
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
200
150
100
50
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 96 °C/W
100
10
100µs
1ms
10ms
100ms
1s
T
A = 25°C
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 96 oC/W
0.1
0.01
T
A = 25oC
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJA(t) = r(t) + RθJA
0.2
RθJA = 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
T
J - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
FDD6670A, Rev. C
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Packaging
Configuration: Figure 1.0
Packaging Description:
TO-252 parts are shipped in tape. The carrier tape is
ELECTROSTATIC
SENSITIVE DEVICES
made from dissipative (carbon filled) polycarbonate
a
DO NO
T
S
M
HI
P
OR
S
TO
RE
N
E
AR
S
T
RO NG
E
L
E
CTROS
T
ATIC
E
L
E
CTRO
AGN
E
TI
C,
M
AG NE
T
IC
O
R R ADIO ACTIVE FI ELD S
TNR DATE
PT NUMB E
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
R
PEEL STRENGTH MIN ______________gms
MAX _____________gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
8 0 6 6
8 0 6 6
F D
5 3 9 Z F 9
8 0 6 6
8 0 6 6
F D
5 3 9 Z F 9
D
F D
D
D
F D
D
5 3 9 Z F 9
5 3 9 Z F 9
D-PAK (TO-252) Packaging Information
Standard
(no flow code)
Packaging Option
D-PAK (TO-252) Unit Orientation
Packaging type
TNR
2,500
Qty per Reel/Tube/Bag
Reel Size
13" Dia
359x359x57
5,000
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel(kg)
359mm x 359mm x 57mm
Standard Intermediate box
0.300
1.200
ESD Label
Note/Comments
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 2500
SPEC:
FSID: FDD6680
D/C1: Z9942
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
TO-252 (D-PAK) Tape Leader and
Trailer Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
640mm minimum or
80 empty pockets
1680mm minimum or
210 empty pockets
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Embossed Carrier
Tape Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
TO252
(24mm)
6.90
+/-0.10
10.50
+/-0.10
16.0
+/-0.3
1.55
+/-0.05
1.5
+/-0.10
1.75
+/-0.10
14.25
min
7.50
+/-0.10
8.0
+/-0.1
4.0
+/-0.1
2.65
+/-0.10
0.30
+/-0.05
13.0
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
0.9mm
maximum
B0
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
D-PAK (TO-252) Reel
Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Reel
Option
Tape Size
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.646 +0.078/-0.000
16.4 +2/0
0.882
22.4
0.626 – 0.764
15.9 – 19.4
164mm
13" Dia
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
TO-252 (FS PKG Code AA)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
September 1999, Rev. A
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not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
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TinyLogic™
UHC™
CROSSVOLT™
E2CMOSTM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
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GTO™
HiSeC™
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failure to perform when properly used in accordance
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user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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