FDD6688 [FAIRCHILD]

30V N-Channel PowerTrench MOSFET; 30V N沟道PowerTrench MOSFET的


型号：	FDD6688
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	30V N-Channel PowerTrench MOSFET 30V N沟道PowerTrench MOSFET的晶体晶体管功率场效应晶体管开关脉冲
文件：	总6页 (文件大小：121K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

June 2004

FDD6688/FDU6688

30V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) and fast switching speed.

84 A, 30 V.

R_DS(ON)= 5 mW @ V_GS= 10 V

R_DS(ON)= 6 mW @ V_GS= 4.5 V

Low gate charge

Fast switching

Applications

High performance trench technology for extremely

low R_DS(ON)

DC/DC converter

Motor Drives

I-PAK

(TO-251AA)

D-PAK

(TO-252)

TO-252

G D S

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbo

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

±20

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 3)

(Note 1a)

(Note 1)

100

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

3.8

1.6

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

1.8

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

R_qJA

Package Marking and Ordering Information

Device Marking

Device

FDD6688

FDU6688

Package

Reel Size

13’’

Tape width

Quantity

2500 units

FDD6688

D-PAK (TO-252)

I-PAK (TO-251)

12mm

N/A

FDU6688

Tube

FDD6688/FDU6688 Rev F(W)

Ó2004 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W_DSS

I_AR

Drain-Source Avalanche Energy Single Pulse, V_DD= 15 V, I_D= 21A

Drain-Source Avalanche Current

370

Off Characteristics

Drain–Source Breakdown

V_GS= 0 V,

I_D= 250 mA

BV_DSS

Voltage

DBVDSS

DT_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 mA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current V_DS= 24 V,

Gate–Body Leakage

V_GS= 0 V

V_DS= 0 V

I_GSS

V_GS= ±20 V,

±100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

1.8

–5

V_DS= V_GS

I_D= 250 mA

Gate Threshold Voltage

Temperature Coefficient

DVGS(th)

DT_J

I_D= 250 mA, Referenced to 25°C

mV/°C

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

V_GS= 4.5 V,

V_GS= 10 V, I_D= 18 A, T_J=125°C

I_D= 18 A

I_D= 16.5 A

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 5 V,

V_DS= 5 V

I_D= 18 A

Forward Transconductance

Dynamic Characteristics

V_DS= 15 V,

f = 1.0 MHz

V _GS= 0 V,

f = 1.0 MHz

C_iss

C_oss

C_rss

R_G

Input Capacitance

3845

930

368

1.2

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 15 mV,

Switching Characteristics (Note 2)

V_DD= 15 V,

V_GS= 10 V,

I_D= 1 A,

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

R_GEN= 6 W

V_DS= 15V,

V_GS= 5 V

I_D= 18 A,

Q_g

Q_gs

Q_gd

FDD6688/FDU6688 Rev F(W)

Electrical Characteristics (continued)

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= 3.2 A

(Note 2)

0.7

1.2

t_rr

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I_F= 18 A ,d_iF/d_t= 100 A/µs

Q_rr

Notes:8

1. R_qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_qJCis guaranteed by design while R_qCAis determined by the user's board design.

_qJA= 40°C/W when mounted on a

_qJA= 96°C/W when mounted

1in²pad of 2 oz copper

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

P_D

3. Maximum current is calculated as:

R_DS(ON)

where P_Dis maximum power dissipation at T_C= 25°C and R_DS(on)is at T_J(max)and V_GS= 10V. Package current limitation is 21A

FDD6688/FDU6688 Rev F(W)

Typical Characteristics

100

1.8

1.6

1.4

1.2

V_GS= 10V

4.0V

V_GS= 3.5V

4.5V

3.5V

4.0V

4.5V

5.0V

3.0V

6.0V

10V

0.8

100

0.5

1.5

2.5

175

3.5

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

0.012

I_D= 9 A

I_D=18A

V_GS= 10V

1.6

1.4

1.2

0.01

0.008

0.006

0.004

0.002

T_A= 125^oC

T_A= 25^oC

0.8

0.6

-50

-25

100

125

150

V_GS, GATE TO SOURCE VOLTAGE (V)

T_J, JUNCTION TEMPERATURE (^oC)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

V_DS= 5V

T_A= 125^oC

25^oC

0.1

-55^oC

T_A= 125^oC

0.01

0.001

0.0001

25^oC

-55^oC

1.5

2.5

0.2

0.4

0.6

0.8

1.2

1.4

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6688/FDU6688 Rev F(W)

Typical Characteristics

5000

4000

3000

2000

1000

V_DS= 10V

15V

f = 1MHz

V_GS= 0 V

I_D=18A

20V

C_ISS

C_OSS

C_RSS

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

1000

100

SINGLE PULSE

R_qJA= 96°C/W

T_C= 25°C

100ms

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

V_GS= 10V

SINGLE PULSE

R_qJA= 96^oC/W

T_C= 25^oC

0.1

0.01

0.1

100

1000

0.01

0.1

100

t₁, TIME (sec)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

_qJAt) = r(t) * R_qJA

0.2

_qJA= 96 °C/W

0.1

0.01

0.05

0.02

0.01

P(pk)

t₁

t₂

T_J- TA = P * R_qJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDD6688/FDU6688 Rev F(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

Power247™

PowerSaver™

PowerTrench

QFET

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

FAST

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

QS™

QT Optoelectronics™ TinyLogic

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TINYOPTO™

TruTranslation™

UHC™

HiSeC™

I²C™

i-Lo™

ImpliedDisconnect™

UltraFET

FACT Quiet Series™

SILENT SWITCHER VCX™

SMART START™

SPM™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

Across the board. Around the world.™

The Power Franchise

ProgrammableActive Droop™

Stealth™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I11

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