FDD6N50TMF085 [FAIRCHILD]
N-Channel UniFETTM MOSFET500 V, 6 A, 900 mΩ;
| 型号： | FDD6N50TMF085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel UniFETTM MOSFET500 V, 6 A, 900 mΩ |
| 文件： | 总9页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2013
FDD6N50 / FDU6N50
TM
N-Channel UniFET MOSFET
500 V, 6 A, 900 mΩ
Features
Description
•
•
•
•
•
RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A
Low Gate Charge (Typ. 12.8 nC)
Low Crss (Typ. 9 pF)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
100% Avalanche Tested
Improved dv/dt Capability
Applications
•
•
•
•
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
S
I-PAK
G
D-PAK
G
D
S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
FDD6N50TM /
FDD6N50TM_WS /
FDU6N50TU
Symbol
VDSS
Parameter
Unit
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6
3.8
A
A
(Note 1)
IDM
Drain Current
- Pulsed
24
30
A
V
VGSS
EAS
IAR
Gate-Source voltage
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
270
6
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.9
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
89
0.71
W
W/°C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for
5 Seconds
300
°C
Thermal Characteristics
FDD6N50TM /
FDD6N50TM_WS /
FDU6N50TU
Symbol
Parameter
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
1.4
83
°C/W
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©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
1
Package Marking and Ordering Information
Part Number
FDD6N50TM
Top Mark
FDD6N50
FDD6N50S
FDU6N50
Package
DPAK
DPAK
IPAK
Packing Method
Tape and Reel
Tape and Reel
Tube
Reel Size
330 mm
330 mm
N/A
Tape Width
16 mm
16 mm
N/A
Quantity
2500 units
2500 units
75 units
FDD6N50TM_WS
FDU6N50TU
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
D = 250 μA, Referenced to 25°C
500
--
--
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.5
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
DS = 400 V, TC = 125°C
--
--
--
--
1
10
μA
μA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250 μA
3.0
--
--
5.0
0.9
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 3 A
0.76
2.5
gFS
Forward Transconductance
VDS = 40 V, ID = 3 A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
720
95
9
940
190
13.5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250 V, ID = 6 A,
--
--
--
--
--
--
--
6
55
20
120
60
ns
ns
V
GS = 10 V, RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
ns
(Note 4)
(Note 4)
35
80
ns
Qg
VDS = 400 V, ID = 6 A,
GS = 10 V
12.8
3.7
5.8
16.6
--
nC
nC
nC
V
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
6
24
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 6 A
--
V
VGS = 0 V, IS = 6 A,
275
1.7
ns
μC
dIF/dt =100 A/μs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 6 A, V = 50 V, L=13.5 mH, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 6 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
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©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
VGS
Top :
10.0 V
8.0V
101
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
15
10
5
150℃
25℃
Bottom : 5.0 V
100
10-1
10-2
-55℃
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Note
1. VDS = 40V
2. 250μ s Pulse Test
0
0
10
20
30
40
50
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
2.5
2.0
1.5
1.0
0.5
0.0
101
100
10-1
VGS = 10V
VGS = 20V
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : T = 25℃
J
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
Coss = Cds + Cgd
Crss = Cgd
1000
100
10
VDS = 400V
C
iss
Coss
6
Crss
4
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 6A
0
100
101
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
♦ Notes :
1. VGS = 0 V
♦ Notes :
1. VGS = 10 V
2. ID = 3 A
2. ID = 250 μA
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
102
Operation in This Area
is Limited by R DS(on)
10 us
101
100 us
1 ms
10 ms
100
DC
※ Notes :
10-1
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
10-2
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
100
10-1
10-2
D=0.5
0.2
0.1
※
Notes
:
1. Zθ (t)
=
1.4 ℃ /W M ax.
JC
2. Duty Factor, D=t1/t2
3. TJM
-
TC
=
PDM * Zθ (t)
JC
0.05
0.02
0.01
PDM
t1
t2
single pulse
10-4
10-5
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
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©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
6
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
7
Mechanical Dimensions
Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT251-003
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
8
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
Sync-Lock™
®*
AX-CAP®*
FRFET®
®
tm
BitSiC™
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
PowerTrench®
PowerXS™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
TinyBoost®
Programmable Active Droop™
TinyBuck®
QFET®
TinyCalc™
QS™
TinyLogic®
Quiet Series™
RapidConfigure™
™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
MillerDrive™
STEALTH™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
MotionMax™
SuperFET®
mWSaver®
SuperSOT™-3
SuperSOT™-6
FAST®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
SuperSOT™-8
FastvCore™
FETBench™
FPS™
SupreMOS®
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
9
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