FDH20N40 [FAIRCHILD]
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET; 20A ， 400V ， 0.216 Ohm的N通道开关电源功率MOSFET
| 型号： | FDH20N40 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET |
| 文件： | 总6页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2002
FDH20N40 / FDP20N40
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
Applications
Features
•
Low Gate Charge
Requirement
Q
results in Simple Drive
Switch Mode Power Supplies(SMPS), such as
g
•
•
•
•
•
•
PFC Boost
•
Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
Two-Switch Forward Converter
Single Switch Forward Converter
Flyback Converter
•
•
•
•
Reduced r
DS(ON)
Buck Converter
Reduced Miller Capacitance and Low Input Capacitance
Improved Switching Speed with Low EMI
175°C Rated Junction Temperature
High Speed Switching
Package
Symbol
JEDEC TO-247
JEDEC TO-220AB
SOURCE
DRAIN
GATE
D
S
SOURCE
DRAIN
GATE
G
DRAIN
(FLANGE)
DRAIN
(FLANGE)
Absolute Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Drain to Source Voltage
Ratings
Units
V
V
400
V
V
DSS
GS
Gate to Source Voltage
±30
Drain Current
o
20
14
80
A
A
Continuous (T = 25 C, V = 10V)
C
GS
I
D
o
Continuous (T = 100 C, V = 10V)
C
GS
Pulsed (Note 1)
A
Power dissipation
Derate above 25 C
273
1.82
W
W/ C
P
o
o
D
o
T , T
Operating and Storage Temperature
Soldering Temperature for 10 seconds
Mounting Torque, 8-32 or M3 Screw
-55 to 175
C
J
STG
o
300 (1.6mm from case)
10ibf*in (1.1N*m)
C
Thermal Characteristics
o
R
Thermal Resistance Junction to Case
0.55
C/W
θJC
o
o
o
R
Thermal Resistance Case to Sink, Flat, Greased Surface
Thermal Resistance Junction to Ambient (TO-247)
Thermal Resistance Junction to Ambient (TO-220)
0.24
40
C/W
C/W
C/W
θCS
R
R
θJA
θJA
62
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A,
Package Marking and Ordering Information
Device Marking
FDH20N40
Device
Package
TO-247
TO-220
Reel Size
Tube
Tape Width
Quantity
FDH20N40
FDP20N40
-
-
30
50
FDP20N40
Tube
Electrical Characteristics T = 25°C (unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Statics
B
Drain to Source Breakdown Voltage
I
= 250µA, V = 0V
400
-
-
-
-
V
VDSS
D
GS
V/°C Reference to 25°C
= 1mA
∆B
/∆T Breakdown Voltage Temp. Coefficient
0.43
VDSS
J
I
D
r
Drain to Source On-Resistance
Gate Threshold Voltage
V
V
V
V
V
= 10V, I = 10A
-
0.200
0.216
4.0
Ω
DS(ON)
GS
DS
DS
GS
GS
D
V
= V , I = 250µA
2.0
3.5
V
GS(th)
GS
D
o
= 400V
T
T
= 25 C
-
-
-
-
-
-
25
C
C
I
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
nA
DSS
o
= 0V
=150 C
250
±100
= ±20V
GSS
Dynamics
g
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
V
= 50V, I = 10A
10
-
-
-
S
fs
DS
D
Q
Q
Q
35
42
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
g(TOT)
V
V
= 10V
= 320V
= 20A
GS
-
10
12
gs
DS
I
D
-
12
14.4
gd
t
t
t
t
-
12.4
32.5
30
-
-
-
-
-
-
-
d(ON)
V
I
= 200V
= 20A
= 10Ω
= 15.4Ω
DD
-
r
D
R
R
Turn-Off Delay Time
Fall Time
-
G
D
d(OFF)
f
-
34
C
C
C
Input Capacitance
-
1840
245
18
ISS
V
= 25V, V = 0V
GS
DS
Output Capacitance
Reverse Transfer Capacitance
-
OSS
RSS
f = 1MHz
-
Avalanche Characteristics
E
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
1100
-
-
-
-
mJ
A
AS
I
20
AR
Drain-Source Diode Characteristics
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
-
-
-
-
20
80
A
A
S
G
Pulsed Source Current (Note 1)
(Body Diode)
I
SM
V
Source to Drain Diode Voltage
Reverse Recovery Time
I
I
I
= 20A
-
-
-
0.9
351
4.5
1.2
456
5.85
V
SD
SD
SD
SD
t
= 20A, dI /dt = 100A/µs
ns
µC
rr
SD
Q
Reverse Recovered Charge
= 20A, dI /dt = 100A/µs
SD
RR
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T = 25°C, L = 5.5mH, I = 20A
J
AS
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A
Typical Characteristics
100
o
100
10
1
o
T
= 175 C
T
= 25 C
C
C
V
DESCENDING
V
DESCENDING
GS
GS
10V
7V
6.5V
6V
10V
7V
6.5V
6V
5.5V
5V
5.5V
5V
10
PULSE DURATION = 80
µs
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 1. Output Characteristics
Figure 2. Output Characteristics
40
3.0
2.5
2.0
1.5
1.0
0.5
0.0
PULSE DURATION = 80µs
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
V
= 50V
DD
30
20
10
0
o
o
T
= 175 C
T
= 25 C
J
J
V
= 10V, I = 10A
GS
D
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperatrue
15
ID = 20A
C
1000
100
10
ISS
200V
10
C
OSS
320V
80V
5
C
RSS
V
= 0V, f = 1MHz
GS
0
0
1
1
10
100
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A
Typical Characteristics
40
35
30
25
20
15
100
10
1
100µs
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
1ms
10ms
DC
10
5
o
o
T
= 175 C
T
= 25 C
J
J
TC = 25oC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
1000
VSD, SOURCE TO DRAIN VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Source to Drain Diode Forward Voltage
Figure 8. Maximum Safe Operating Area
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 9. Maximum Drain Current vs Case Temperature
2.0
1.0
0.50
0.20
0.10
t1
0.1
PD
0.05
0.02
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X Z JC X R JC) + TC
SINGLE PULSE
10-4
θ
θ
0.01
0.01
10-5
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
Figure 10. Normalized Maximum Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A
Test Circuits and Waveforms
V
BV
DSS
DS
t
P
V
DS
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 11. Unclamped Energy Test Circuit
Figure 12. Unclamped Energy Waveforms
V
DS
Q
g(TOT)
R
L
V
DS
V
= 10V
GS
V
GS
+
-
V
DD
V
GS
V
= 1V
DUT
GS
0
I
g(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
Figure 13. Gate Charge Test Circuit
Figure 14. Gate Charge Waveforms
V
t
t
DS
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
R
L
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
Figure 15. Switching Time Test Circuit
Figure 16. Switching Time Waveform
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A
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NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
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