FDJ1032C_08 [FAIRCHILD]
Complementary PowerTrench MOSFET; 互补的PowerTrench MOSFET
| 型号： | FDJ1032C_08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Complementary PowerTrench MOSFET |
| 文件： | 总9页 (文件大小：3826K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F
June 2008
FDJ1032C
Complementary PowerTrench® MOSFET
Features
General Description
■ Q1 –2.8 A, –20 V.
R
R
R
= 160 mΩ @ V = –4.5 V
These N & P-Channel MOSFETs are produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and yet main-
tain superior switching performance.
DS(ON)
DS(ON)
DS(ON)
GS
= 230 mΩ @ V = –2.5 V
GS
= 390 mΩ @ V = –1.8 V
GS
■ Q2 3.2 A, 20 V.
■ Low gate charge
R
R
= 90 mΩ @ V = 4.5 V
DS(ON)
DS(ON)
GS
= 130 mΩ @ V = 2.5 V
GS
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
■ High performance trench technology for extremely low
R
DS(ON)
■ FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
■ RoHS Compliant
Applications
■ DC/DC converter
■ Load switch
■ Motor Driving
Bottom Drain Contact
S2
S1
4
5
6
3
2
1
G1
Q2 (N)
G2
S2
S1
Q1 (P)
Bottom Drain Contact
Absolute Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Q1
–20
8
Q2
20
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
V
V
A
DSS
12
GSS
I
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
–2.8
–12
3.2
12
D
P
(Note 1a)
(Note 1b)
1.5
0.9
W
°C
D
T , T
Operating and Storage Junction Temperature Range
–55 to +150
J
STG
Thermal Characteristics
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
80
5
°C/W
θJA
θJC
©2008 Fairchild Semiconductor Corporation
FDJ1032C Rev. B2(W)
1
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Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.H
FDJ1032C
7"
8mm
3000 units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV
Drain-Source Breakdown
Voltage
V
V
= 0 V, I = –250 µA
Q1
Q2
–20
20
V
mV/°C
µA
DSS
GS
GS
D
= 0 V, I = 250 µA
D
∆BVDSS
∆T
BreakdownVoltageTemperature
Coefficient
I
I
= –250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
D
Q1
Q2
–13
13
D
J
I
Zero Gate Voltage Drain Current
V
V
= –16 V, V = 0 V
Q1
Q2
–1
1
DSS
DS
GS
= 16 V, V = 0 V
DS
GS
I
Gate-Body Leakage
V
V
=
=
8 V, V = 0 V
Q1
Q2
100
100
nA
GSS
GS
GS
DS
12 V, V = 0 V
DS
On Characteristics (Note 2)
V
Gate Threshold Voltage
V
V
= V , I = –250 µA
Q1
Q2
–0.4
0.6
–0.8
1.0
–1.5
1.5
V
GS(th)
DS
DS
GS
D
= V , I = 250 µA
GS
D
∆VGS(th)
Gate Threshold Voltage
Temperature Coefficient
I
I
= –250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
D
Q1
Q2
3
–3
mV/°C
mΩ
D
∆T
J
R
Static Drain-Source
On-Resistance
V
V
V
V
= –4.5 V, I = –2.8 A
Q1
108
163
283
150
160
230
390
238
DS(on)
GS
D
= –2.5 V, I = –2.2 A
GS
GS
GS
D
= –1.8 V, I = –1.7 A
D
= –4.5 V, I =2.8A, T = 125°C
D
J
V
V
V
= 4.5 V, I = 3.2 A
Q2
70
100
83
90
130
132
GS
GS
GS
D
= 2.5 V, I = 2.7 A
D
= 4.5 V, I = 3.2, T = 125°C
D
J
g
Forward Transconductance
V
V
= –5 V, I = – 2.8 A
Q1
Q2
5
7.5
S
FS
DS
DS
D
= 5 V, I = 3.2 A
D
Dynamic Characteristics
C
C
C
R
Input Capacitance
Q1:
Q1
Q2
290
200
pF
pF
pF
Ω
iss
oss
rss
G
V
= –10 V, V = 0 V, f = 1.0 MHz
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
55
50
Q2:
V
= 10 V, V = 0 V, f = 1.0 MHz
DS
GS
Q1
Q2
29
30
V
=
Q1
Q2
14
3
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q1:
Q1
Q2
8
7
16
14
ns
ns
ns
ns
d(on)
V
V
= –10 V, I = –1 A,
D
DD
GS
= –4.5 V, R
= 6 Ω
GEN
Q1
Q2
13
8
23
16
r
Q2:
Q1
Q2
13
11
23
20
d(off)
f
V
V
= 10 V, I = 1 A,
D
DD
GS
= 4.5V, R
= 6 Ω
GEN
Q1
Q2
18
2
32
4
2
www.fairchildsemi.com
FDJ1032C Rev. B2(W)
Electrical Characteristics (Continued)
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Q
Total Gate Charge
Q1:
Q1
Q2
3
2
4
3
nC
nC
nC
g
V
= –10 V, I = –2.8 A, V = –4.5V
D GS
DS
Q
Gate-Source Charge
Gate-Drain Charge
Q1
Q2
0.65
0.4
gs
gd
Q2:
V
= 10 V, I = 3.2 A, V = 4.5 V
D GS
DS
Q
Q1
Q2
0.75
1.0
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
I
Q1
Q2
–1.25
1.25
A
V
S
V
t
Drain-Source Diode Forward
Voltage
V
V
= 0 V, I = –1.3 A (Note 2)
Q1
Q2
–0.8
0.8
–1.2
1.2
SD
GS
GS
S
= 0 V, I = 1.3 A (Note 2)
S
Diode Reverse Recovery Time
I = –4.2A, d /d = 100 A/µs
Q1
Q2
14
11
nS
nC
rr
F
IF
t
I = 5.9A, d /d = 100 A/µs
F
IF
t
Q
Diode Reverse Recovery
Charge
I = –4.2A, d /d = 100 A/µs
Q1
Q2
4
2.5
rr
F
IF
t
I = 5.9A, d /d = 100 A/µs
F
IF
t
Notes:
1.
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user's board design.
θCA
a) 80°C/W when mounted
b) 140°C/W when mounted on
a
2
on a 1in pad of 2 oz
copper (Single Opera-
tion).
minimum pad of
(Single Operation).
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3
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FDJ1032C Rev. B2(W)
Typical Characteristics : Q1
2.6
2.4
2.2
2
10
VGS=-4.5V
-3.5V
-3.0V
VGS=-1.8V
8
6
4
2
0
-2.5V
-2.0V
1.8
1.6
1.4
1.2
1
-2.5V
-2.0V
-1.8V
-3.0V
-3.5V
-4.0V
-4.5V
0.8
0
1
2
3
4
5
150
2.5
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.4
1.3
1.2
1.1
1
0.5
ID = -1.4A
ID = -2.8A
0.44
0.38
0.32
0.26
0.2
VGS = -4.5V
TA = 125°C
0.9
0.8
0.7
0.14
0.08
TA = 25°C
-50
-25
0
25
50
75
100
125
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
5
VDS = -5V
VGS=0V
TA = -55°C
25°C
10
1
4
3
2
1
0
125°C
TA = 125°C
0.1
25°C
0.01
0.001
0.0001
-55°C
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
4
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FDJ1032C Rev. B2(W)
Typical Characteristics : Q1
5
500
400
300
200
100
0
f = 1 MHz
GS = 0 V
ID = -2.8A
VDS = -5V
-10V
V
4
3
2
1
0
-15V
CISS
COSS
CRSS
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
8
100
SINGLE PULSE
RθJA = 140°C/W
TA = 25°C
100 µs
10
1
RDS(ON) LIMIT
1ms
6
10ms
1s
100ms
DC 10s
4
VGS = -4.5V
SINGLE PULSE
RθJA = 140oC/W
0.1
0.01
2
TA = 25oC
0
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
5
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FDJ1032C Rev. B2(W)
Typical Characteristics : Q2
12
2.2
2
3.5V
VGS = 4.5V
3.0V
10
8
VGS = 2.5V
1.8
1.6
1.4
1.2
1
2.5V
6
3.0V
4
3.5V
2.0V
4.0V
4.5V
2
0
0.8
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
V
DS, DRAIN-SOURCE VOLTAGE (V)
I
D, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.5
1.4
1.3
1.2
1.1
1
0.28
0.24
0.2
ID = 3.2A
ID = 1.6A
V
GS = 4.5V
0.16
0.12
0.08
0.04
TA = 125°C
0.9
0.8
0.7
0.6
TA = 25°C
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (°C)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
10
1
VGS = 0V
VDS = 5V
TA = -55°C
25°C
TA = 125°C
125°C
0.1
6
25°C
0.01
0.001
0.0001
4
-55°C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
6
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FDJ1032C Rev. B2(W)
Typical Characteristics : Q2
θ
θ
7
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FDJ1032C Rev. B2(W)
Dimensional Outline and Pad Layout
PKG
L
(0.24)
(0.73)
DRAIN
C
(0.18)
1
3
0.30
0.20
C
L
PKG
(0.46)
(0.50)
6
4
DRAIN 1
DRAIN 2
PKG
C
L
Bottom View
0.30 MIN
4
6
DRAIN 1
TERMINAL
1.70
1.50
A
0.20
PKG
PKG
2.35 MIN
C
L
0.84
C
4
6
B
L
1.35
0.60
0.50 MIN
1.75
1.55
PKG C
L
1
3
DRAIN 2
TERMINAL
0.50
1.00
1
3
Recommended Landing Pattern
0.275
0.125
(0.20)
0.075 M A B
Notes: Unless otherwise specified all dimensions are in millimeters.
0.50
1.00
Top View
PKG
PKG
C
C
L
L
0.225
0.075
0.80
0.65
1.075
0.925
SEATING
PLANE
2.15
1.85
PKG
8
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FDJ1032C Rev. B2(W)
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
®
Build it Now™
CorePLUS™
CorePOWER™
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FPS™
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FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
PDP SPM™
Power-SPM™
PowerTrench
The Power Franchise
®
®
SM
Programmable Active Droop™
TinyBoost™
TinyBuck™
®
QFET
Current Transfer Logic™
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
®
TinyLogic
®
EcoSPARK
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
EfficentMax™
EZSWITCH™ *
™
SMART START™
®
SPM
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
SyncFET™
®
®
Fairchild
UHC
®
Fairchild Semiconductor
FACT Quiet Series™
Ultra FRFET™
UniFET™
VCX™
®
®
FACT
®
®
FAST
OPTOPLANAR
VisualMax™
®
FastvCore™
FlashWriter
®
*
tm
®
* EZSWITCH™ and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I35
9
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FDJ1032C Rev. B2(W)
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