FDMS8670AS [FAIRCHILD]
N-Channel PowerTrench㈢ SyncFET⑩; N沟道PowerTrench㈢ SyncFET⑩
| 型号： | FDMS8670AS |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench㈢ SyncFET⑩ |
| 文件： | 总7页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2007
FDMS8670AS
tm
N-Channel PowerTrench® SyncFETTM
30V, 42A, 3.0mΩ
Features
General Description
Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A
Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A
The FDMS8670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
Advanced Package and Silicon combination
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Pin 1
D
S
S
S
G
G
5
6
7
8
4
3
2
1
D
D
D
S
S
S
D
D
D
D
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
C = 25°C
42
T
127
ID
A
TA = 25°C
(Note 1a)
(Note 1a)
23
-Pulsed
200
EAS
Single Pulse Avalanche Energy
Power Dissipation
384
mJ
W
TC = 25°C
TA = 25°C
50
PD
Power Dissipation
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.6
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDMS8670AS
FDMS8670AS
Power 56
13’’
3000units
1
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 10mA, referenced to 25°C
28
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
500
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1mA
1.0
1.7
-5
3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10mA, referenced to 25°C
mV/°C
VGS = 10V, ID = 23A
2.4
3.5
3.5
143
3.0
4.7
4.7
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 18A
VGS = 10V, ID = 23A, TJ = 125°C
VDD = 10V, ID = 23A
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2718
1537
343
3615
2045
515
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
14
5
26
10
52
10
55
28
ns
ns
VDD = 15V, ID = 23A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
32
4
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
39
20
7.2
4.0
nC
nC
nC
nC
VDD = 15V,
ID = 23A
Qg
VGS = 0V to 4.5V
Qgs
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS =2A (Note 3)
0.4
39
48
0.7
63
77
V
ns
nC
IF = 23A, di/dt = 300A/µs
Qrr
Reverse Recovery Charge
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
a. 50°C/W when mounted on
a 1 in pad of 2 oz copper.
2
2. Starting T = 25°C, L = 3mH, I = 16A, V = 30V, V =10V.
J
AS
DD
GS
3. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
2
Typical Characteristics TJ = 25°C unless otherwise noted
200
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
160
VGS = 3V
VGS = 3.5V
VGS = 4V
120
VGS = 3.5V
VGS = 4V
80
VGS = 4.5V
VGS = 3V
VGS = 10V
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
0
40
80
120
160
200
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
14
ID = 23A
GS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 23A
6
TJ = 125oC
TJ = 25oC
4
2
0
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
175
100
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
140
105
70
35
0
10
1
VDS = 5V
TJ = 125oC
TJ = 25oC
0.1
TJ = 125oC
TJ = 25oC
TJ = -55oC
0.01
TJ = -55oC
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
5000
1000
ID = 23A
8
Ciss
VDD = 10V
6
Coss
VDD = 15V
VDD = 20V
4
Crss
2
0
f = 1MHz
= 0V
V
GS
100
0.1
1
10
30
0
10
20
Q , GATE CHARGE(nC)
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
140
120
100
80
40
VGS = 10V
10
TJ = 25oC
Limited by Package
VGS = 4.5V
60
TJ = 125oC
40
20
R
θJC = 1.6oC/W
1
0.01
0
25
0.1
1
10
100
600
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
2000
300
100
1000
100
10
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
100µs
TA = 25oC
10
1
1ms
10ms
THIS AREA IS
100ms
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
1s
0.1
10s
DC
R
θJA = 125oC/W
TA = 25oC
1
0.5
0.01
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
0.01
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
θJA = 125oC/W
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.001
0.0005
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
5
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with
a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8670AS.
0.01
T
= 125oC
= 100oC
J
0.001
0.0001
1E-5
T
J
T
J
= 25oC
1E-6
0
5
10
15
20
25
30
TIME: 25nS/Div
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS8670AS SyncFET Body Diode
Reverse Recovery Characteristics
Figure 15. SyncFET Body Diode Reverse Leakage
vs Drain to Source Voltage
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
6
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury to the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
www.fairchildsemi.com
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