FDN340PS62Z [FAIRCHILD]

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3;


型号：	FDN340PS62Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 开关光电二极管晶体管
文件：	总5页 (文件大小：99K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

September 2001

FDN340P

Single P-Channel, Logic Level, PowerTrench^ÒMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor advanced Power Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior switching performance.

· –2A, 20 V

R_DS(ON)= 70 mW @ V_GS= –4.5 V

R_DS(ON)= 110 mW @ V_GS= –2.5 V

· Low gate charge (7.2 nC typical).

These devices are well suited for portable electronics

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

· High performance trench technology for extremely

low R_DS(ON)

· High power version of industry Standard SOT-23

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

SuperSOT -3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

V_GSS

I_D

Gate-Source Voltage

±8

–2

Drain Current – Continuous

– Pulsed

(Note 1a)

–10

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.5

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

250

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

340

FDN340P

7’’

8mm

3000 units

Ó2001 Fairchild Semiconductor Corporation

FDN340P Rev E (W)

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V, I_D= –250 mA

–20

Breakdown Voltage Temperature

Coefficient

DBVDSS

DT_J

I_D= –250 mA,Referenced to 25°C

–12

mV/°C

V_DS= –16 V, V_GS= 0 V

–1

–10

100

–100

I_DSS

Zero Gate Voltage Drain Current

V_DS= –16 V, V_GS= 0 V,T_J=55°C

I_GSSF

I_GSSR

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_GS= 8 V,

V_DS= 0 V

V_GS= –8 V,

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

Temperature Coefficient

V_DS= V_GS, I_D= –250 mA

–0.4

–0.8

–1.5

mV/°C

DVGS(th)

DT_J

R_DS(on)

I_D= –250 mA,Referenced to 25°C

Static Drain–Source

On–Resistance

V_GS= –4.5 V, I_D= –2 A

120

110

V_GS= –4.5 V, I_D= –2 A,T_J=125°C

V_GS= –2.5 V,

I_D= –1.7A,

I_D(on)

g_FS

On–State Drain Current

V_GS= –4.5 V, V_DS= –5 V

–5

Forward Transconductance

V_DS= –4.5 V,

I_D= –2 A

Dynamic Characteristics

600

175

Input Capacitance

779

121

V_DS= –10 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= –10 V,

V_GS= –4.5 V,

I_D= –1 A,

R_GEN= 6 W

7.2

1.7

1.5

Q_g

V_DS= –10V,

V_GS= –4.5 V

I_D= –3.5 A,

Q_gs

Q_gd

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

–0.42

–1.2

Drain–Source Diode Forward

V_SD

V_GS= 0 V, I_S= –0.42 A (Note 2)

–0.7

Voltage

Notes:

_qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_qJCis guaranteed by design while R_qCAis determined by the user's board design.

a. 250°C/W when mounted on a

0.02in pad of 2 oz copper

b. 270°C/W when mounted on a

.001 in pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

FDN340P Rev E (W)

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= -4.5V

-3.0V

-2.5V

-3.5V

V_GS=-2.0V

-2.0V

-2.5V

-3.0V

-3.5V

-4.5V

-1.5V

0.8

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

1.3

0.22

I_D= -1A

I_D= -2A

V_GS= -4.5V

0.18

0.14

0.1

1.2

1.1

T_A= 125^oC

T_A= 25^oC

0.9

0.8

0.7

0.06

0.02

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

V_DS= -5V

V_GS= 0V

T_A= -55^oC

25^oC

125^oC

T_A= 125^oC

0.1

25^oC

0.01

-55^o

0.001

0.0001

0.5

1.5

2.5

0.2

0.4

0.6

0.8

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN340P Rev E (W)

Typical Characteristics

1000

800

600

400

200

f = 1 MHz

V_GS= 0 V

I_D= -3.5A

V_DS= -5V

-10V

C_ISS

-15V

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

= 270° C/W

qJA

R_DS(ON)LIMIT

100ms

1ms

10ms

= 25°C

100ms

V_GS= -10V

SINGLE PULSE

0.1

0.01

_qJA= 270^oC/W

T_A= 25^oC

0.001

0.01

0.1

100

0.1

100

SINGLE PULSE TIME (SEC)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

0.5

0.2

JA (t) = r(t) * R JA

0.1

= 270 °C/W

0.1

0.05

0.02

P(pk)

0.01

0.02

Single Pulse

0.01

0.005

- T = P * R

(t)

qJA

Duty Cycle, D = t /t

0.002

0.001

0.0001

0.001

0.01

0.1

t , TIME (sec)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDN340P Rev E (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

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