FDN361BN [FAIRCHILD]
30V N-Channel, Logic Level, PowerTrench MOSFET; 30V N沟道逻辑电平的PowerTrench MOSFET
| 型号： | FDN361BN |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| 文件： | 总5页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2005
FDN361BN
30V N-Channel, Logic Level, PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
• 1.8 A, 30 V.
RDS(ON) = 110 mΩ @ VGS = 10 V
RDS(ON) = 160 mΩ @ VGS = 4.5 V
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• Low gate charge
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
• Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities
• High performance trench technology for extremely
low RDS(ON)
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
± 20
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
1.4
10
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.5
PD
W
0.46
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
RθJA
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
361B
FDN361BN
7’’
8mm
3000 units
www.fairchildsemi.com
©2005 Fairchild Semiconductor Corporation
FDN361BN Rev A(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 μA
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
26
ID = 250 μA,Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
μA
μA
nA
10
VDS = 24 V, VGS = 0 V, TJ = 55°C
IGSS
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
2.1
3
V
V
DS = VGS
,
ID = 250 μA
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
ID = 1.4 A
ID = 1.2 A
92
120
114
110
160
150
mΩ
V
GS = 10 V, ID = 1.4 A, TJ = 125°C
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V,
VDS = 5 V
3.5
A
S
Forward Transconductance
ID = 1.4 A
4
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
145
35
193
47
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
15
23
VGS = 15 mV,
f = 1.0 MHz
1.6
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
3
8
6
16
29
4
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
16
2
ns
ns
Qg
Qgs
Qgd
1.3
0.5
0.5
1.8
nC
nC
nC
VDS = 15 V,
VGS = 4.5 V
ID = 1.4 A,
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 0.42 A (Note 2)
IF = 1.4 A, diF/dt = 100 A/µs
0.8
1.2
22
V
trr
11
4
nS
nC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Qrr
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250°C/W when mounted on a
2
0.02 in pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
FDN361BN Rev A(W)
www.fairchildsemi.com
Typical Characteristics
5
2.8
2.6
2.4
2.2
2
VGS = 10V
6.0V
4.5V
4
3
2
1
0
VGS = 3.5V
3.5V
1.8
1.6
1.4
1.2
1
4.0V
4.5V
5.0V
6.0V
10V
3.0V
0.8
0
1
2
3
4
5
0
0.5
1
1.5
2
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.25
ID = 1.4A
VGS = 10V
ID = 0.7A
0.225
0.2
0.175
TA = 125oC
0.15
0.125
0.8
0.6
0.1
TA = 25oC
0.075
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
5
VDS = 5V
VGS = 0V
1
4
3
TA = 125oC
0.1
25oC
0.01
2
TA = 125oC
-55oC
25oC
1
0.001
-55oC
0
0.0001
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V
SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN361BN Rev A(W)
www.fairchildsemi.com
Typical Characteristics
10
200
180
160
140
120
100
80
f = 1 MHz
GS = 0 V
ID =1.4A
VDS = 10V
15V
V
CISS
8
6
4
2
0
20V
60
COSS
40
20
CRSS
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
5
4
3
2
1
0
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
100μs
RDS(ON) LIMIT
1ms
10ms
1
100ms
1s
VGS = 10V
DC
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 270oC/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN361BN Rev A(W)
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
TinyLogic
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
®
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
SILENT SWITCHER
SMART START™
SPM™
®
UltraFET
HiSeC™
I2C™
UniFET™
VCX™
Wire™
MSXPro™
OCX™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
®
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
®
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
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