FDP6644SJ69Z [FAIRCHILD]

Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN;


型号：	FDP6644SJ69Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
文件：	总6页 (文件大小：160K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JANUARY 2002

FDP6644S/FDB6644S

30V N-Channel PowerTrench^SyncFET^™

General Description

Features

This MOSFET is designed to replace a single MOSFET

and parallel Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

R_DS(ON)and low gate charge. The FDP6644S includes

an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDP6644S/FDB6644S as the low-side switch in a

synchronous rectifier is indistinguishable from the

performance of the FDP6644/FDB6644 in parallel with

a Schottky diode.

• 28 A, 30 V.

R_DS(ON)= 10 mΩ @ V_GS= 10 V

R_DS(ON)= 12 mΩ @ V_GS= 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (27nC typical)

• High performance trench technology for extremely

low R_DS(ON)and fast switching

• High power and current handling capability

•

TO-263AB

TO-220

FDP Series

FDB Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

150

(Note 1)

– Pulsed

P_D

W/°C

°C

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

0.48

–65 to +125

T_J, T_STG

T_L

Maximum lead temperature for soldering purposes,

°C

275

1/8” from case for 5 seconds

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.1

62.5

°C/W

Package Marking and Ordering Information

Device Marking

FDB6644S

Device

Reel Size

13’’

Tape width

24mm

Quantity

800 units

FDB6644S

FDP6644S

Tube

n/a

FDP6644S/FDB6644S Rev C1(W)

2002 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V,

I_D= 1mA

∆BVDSS

Breakdown Voltage Temperature

I_D= 10mA, Referenced to 25°C

mV/°C

Coefficient

∆T_J

I_DSS

I_GSSF

I_GSSR

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= 24 V, V_GS= 0 V

V_GS= 16 V, V_DS= 0 V

V_GS= –16 V V_DS= 0 V

500

100

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 1mA

1.3

∆VGS(th)

Gate Threshold Voltage

I_D= 10mA, Referenced to 25°C

–9.5

mV/°C

mΩ

Temperature Coefficient

∆T_J

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V, I_D= 28 A

11.5

V_GS= 4.5 V, I_D= 25 A

V_GS=10 V, I_D=28 A, T_J=125°C

I_D(on)

g_FS

On–State Drain Current

Forward Transconductance

V_GS= 10 V, V_DS= 5 V

V_DS= 5 V,

I_D= 28 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

2851

540

196

V_DS= 15 V, V _GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DS= 15 V,

I_D= 1 A,

V_GS= 10 V, R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

V_DS= 15 V,

_GS= 5 V

I_D= 28 A,

Drain–Source Diode Characteristics

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= 3.5 A

V_GS= 0 V, I_S= 7 A

I_F= 28 A,

(Note 1)

0.48

0.6

0.7

t_rr

Diode Reverse Recovery Time

d_iF/d_t= 300 A/µs

(Note 2)

Q_rr

Diode Reverse Recovery Charge

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. See “SyncFET Schottky body diode characteristics” below.

FDP6644S/FDB6644S Rev C1 (W)

Typical Characteristics

120

1.8

1.6

1.4

1.2

V_GS= 10V

4.5V

6.0V

3.0V

V_GS= 3.0V

3.5V

4.5V

2.5V

6.0V

10V

0.8

120

125

3.5

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.025

1.6

I_D= 28A

I_D= 14A

_GS=10V

1.4

1.2

0.02

0.015

0.01

T_A= 125^oC

0.8

0.6

T_A= 25^oC

0.005

-50

-25

100

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

T_A= 55^oC

V_DS= 5V

V_GS= 0V

25^oC

125^oC

T_A= 125^oC

25^oC

0.1

0.01

-55^oC

1.5

2.5

0.2

0.4

0.6

0.8

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP6644S/FDB6644S Rev C1 (W)

Typical Characteristics (continued)

4000

3200

2400

1600

800

f = 1MHz

_GS= 0 V

V_DS= 10V

I_D= 28A

15V

C_ISS

20V

C_OSS

C_RSS

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

100

1000

800

600

400

200

SINGLE PULSE

_θJC= 2.1°C/W

T_A= 25°C

100µs

R_DS(ON)LIMIT

10ms

100ms

10s

V_GS= 10V

SINGLE PULSE

_θJC= 2.1^oC/W

_A= 25^oC

0.1

100

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

_θJC(t) = r(t) * R_θJC

_θJC= 2.1 °C/W

0.2

0.1

0.05

0.02

P(pk

t₁

t₂

_J- T_C= P * R_θJC(t)

0.01

SINGLE PULSE

Duty Cycle, D = t₁/ t₂

0.001

0.0001

0.001

0.01

0.1

100

1000

Figure 11. Transient Thermal Response Curve.

FDP6644S/FDB6644S Rev C1 (W)

Typical Characteristics (continued)

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode

in parallel with PowerTrench MOSFET. This diode

exhibits similar characteristics to a discrete external

Schottky diode in parallel with a MOSFET. Figure 12

FDP6644S.

Schottky barrier diodes exhibit significant leakage at

high temperature and high reverse voltage. This will

increase the power in the device.

Figure 14. SyncFET diode reverse leakage

versus drain-source voltage and

temperature.

0.01

T_A= 100^oC

0.001

0.0001

T_A= 25^oC

0.00001

Time: 12.5ns/div

_DS, REVERSE VOLTAGE (V)

Figure 12. FDP6644S SyncFET body diode

reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an

equivalent size MOSFET produced without SyncFET

(FDP6644).

Time: 12.5ns/div

Figure 13. Non-SyncFET (FDP6644) body

diode reverse recovery characteristic.

FDP6644S/FDB6644S Rev C1 (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

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