FDP6670AL-OLDDIE [FAIRCHILD]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;


型号：	FDP6670AL-OLDDIE
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总5页 (文件大小：156K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

May 2003

FDP6670AL/FDB6670AL

N-Channel Logic Level PowerTrench^ÒMOSFET

General Description

Features

This N-Channel Logic Level MOSFET has been

designed specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers.

80 A, 30 V

R_DS(ON)= 6.5 mW @ V_GS= 10 V

R_DS(ON)= 8.5 mW @ V_GS= 4.5 V

Critical DC electrical parameters specified at

elevated temperature

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications.

High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

175°C maximum junction temperature rating

It has been optimized for low gate charge, low R_DS(ON)

and fast switching speed.

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

240

P_D

W/°C

°C

Total Power Dissipation @ T_C= 25°C

0.45

Derate above 25°C

Operating and Storage Junction Temperature Range

T_J, T_STG

–65 to +175

Thermal Characteristics

R_qJC

Thermal Resistance, Junction-to-Case

2.2

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

24mm

Quantity

FDB6670AL

FDP6670AL

13’’

800 units

FDP6670AL

Tube

n/a

FDP6670AL/FDB6670AL Rev D(W)

Ó2003 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

W_DSS

I_AR

Single Pulse Drain-Source

Avalanche Energy

V_DD= 15 V,

I_D= 80 A

114

Maximum Drain-Source Avalanche

Current

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V,

I_D= 250 mA

DBVDSS

DT_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 mA, Referenced to 25°C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate–Body Leakage

V_DS= 24 V,

V_GS= 0 V

V_GS= ± 20 V, V_DS= 0 V

± 100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

1.9

–5

V_DS= V_GS

I_D= 250 mA

DVGS(th)

DT_J

Gate Threshold Voltage

Temperature Coefficient

I_D= 250 mA, Referenced to 25°C

mV/°C

R_DS(on)

Static Drain–Source On–

Resistance

V_GS= 10 V,

V_GS= 4.5 V,

V_GS= 10 V, I_D= 40 A, T_J=125°C

I_D= 40 A

I_D= 37 A

5.2

6.5

7.2

6.5

8.5

9.7

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 10V,

V_DS= 10 V

I_D= 40 A

Forward Transconductance

115

Dynamic Characteristics

C_iss

Input Capacitance

2440

580

V_DS= 15 V,

f = 1.0 MHz

V _GS= 0 V,

C_oss

Output Capacitance

C_rss

R_G

Reverse Transfer Capacitance

Gate Resistance

250

1.4

V_GS= 15 mV, f = 1.0 MHz

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= 10V,

V_GS= 10 V,

I_D= 1 A,

R_GEN= 6 W

V_DS= 15 V,

V_GS= 5 V

I_D= 40 A,

Q_g

Q_gs

Q_gd

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward

V_GS= 0 V, I_S= 40 A

Voltage

V_SD

(Note 1)

0.9

1.3

t_rr

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I_F= 40 A,

d_iF/d_t= 100 A/µs

Q_rr

Notes:

1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

FDP6670AL/FDB6670AL Rev D(W)

Typical Characteristics

1.8

1.6

1.4

1.2

100

4.0V

4.5V

V_GS= 10V

6.0V

V_GS= 3.5V

3.5V

4.0V

4.5V

5.0V

6.0V

3.0V

1.5

10V

0.8

0.5

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.021

1.6

I_D= 80A

V_GS=10V

I_D= 40A

1.4

0.017

0.013

0.009

0.005

1.2

T_A= 125^oC

0.8

0.6

T_A= 25^oC

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

1000

V_GS= 0V

V_DS= 10V

100

T_A= 125^oC

25^oC

-55^oC

T_A= 125^oC

25^oC

0.1

0.01

0.001

-55^oC

2.5

3.5

0.2

0.4

0.6

0.8

1.2

1.4

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP6670AL/FDB6670AL Rev D(W)

Typical Characteristics

4000

3000

2000

1000

I_D= 80A

f = 1MHz

V_GS= 0 V

V_DS= 10V

C_iss

15V

20V

C_oss

C_rss

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

5000

1000

SINGLE PULSE

R_qJC= 2.2°C/W

T_A= 25°C

4000

10µs

100µs

1mS

10mS

100mS

R_DS(ON)LIMIT

100

3000

2000

1000

V_GS= 10V

SINGLE PULSE

R_qJA= 2.2^oC/W

T_A= 25^oC

0.1

100

0.00001

0.0001

0.001

0.01

0.1

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_qJC(t) = r(t) * R_qJA

R_qJA= 2.2 °C/W

0.2

P(pk

0.1

t₁

t₂

0.05

0.02

0.01

T_J- T_A= P * R_qJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.01

0.00001

0.0001

0.001

0.01

0.1

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

FDP6670AL/FDB6670AL Rev D(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

PACMAN™

POP™

SPM™

ImpliedDisconnect™

ISOPLANAR™

LittleFET™

FACT™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

Stealth™

FACT Quiet Series™

FAST

Power247™

PowerTrench

QFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

FASTr™

FRFET™

QS™

GlobalOptoisolator™

GTO™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

QT Optoelectronics™ TinyLogic

Quiet Series™

RapidConfigure™

RapidConnect™

TruTranslation™

MSXPro™

HiSeC™

I²C™

UHC™

OCX™

UltraFET

OCXPro™

Across the board. Around the world.™

The Power Franchise™

SILENT SWITCHER VCX™

SMARTSTART™

OPTOLOGIC

OPTOPLANAR™

ProgrammableActive Droop™

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NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I3

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