FDP6670S [FAIRCHILD]
30V N-Channel PowerTrench? SyncFET; 30V N沟道的PowerTrench剖SyncFET
| 型号： | FDP6670S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench? SyncFET |
| 文件： | 总6页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrenchÒ SyncFET™
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
·
31 A, 30 V.
RDS(ON) = 8.5 mW @ VGS = 10 V
RDS(ON) = 12.5 mW @ VGS = 4.5 V
·
·
·
Includes SyncFET Schottky body diode
Low gate charge (23nC typical)
High performance trench technology for extremely
low RDS(ON) and fast switching
·
High power and current handling capability
D
D
G
G
G
S
TO-263AB
FDB Series
TO-220
FDP Series
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
V
A
±20
62
Drain Current – Continuous
(Note 1)
(Note 1)
– Pulsed
150
PD
W
W/°C
°C
Total Power Dissipation @ T = 25°C
62.5
0.5
C
Derate above 25°C
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
–55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
°C
275
Thermal Characteristics
RqJC
Thermal Resistance, Junction-to-Case
2.1
°C/W
°C/W
RqJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6670S
FDB6670S
13’’
24mm
800 units
45
FDP6670S
FDP6670S
Tube
n/a
FDP6670S/FDB6670S Rev E(W)
Ó 2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
VDD = 25 V,
ID = 16.5 A
285
mJ
A
Maximum Drain-Source Avalanche
Current
16.5
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 1mA
30
V
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
ID = 26mA, Referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
500
100
µA
nA
nA
IGSSF
IGSSR
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 1mA
1
2.2
3
V
DVGS(th)
DTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = 26mA, Referenced to 25°C
–4.5
mV/°C
mW
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
5
8
10
8.5
12.5
19
VGS=10 V, ID =31 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V, VDS = 10 V
60
A
S
Forward Transconductance
VDS = 10 V,
ID = 31 A
69
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
2639
737
pF
pF
pF
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
222
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
13
10
39
35
23
9
24
21
62
56
32
ns
ns
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 W
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 15 V, ID = 31 A,
VGS = 5 V
8
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
(Note 1)
(Note 1)
0.39
0.48
32
0.7
0.9
V
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
nS
nC
diF/dt = 300 A/µs
(Note 2)
Qrr
56
Notes:
1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6670S/FDB6670S Rev E (W)
Typical Characteristics
150
2.2
2
VGS = 10V
6.0V
5.0V
120
VGS = 4.0V
1.8
1.6
1.4
1.2
1
4.5V
90
60
30
0
4.5V
5.0V
4.0V
6.0V
7.0V
8.0V
10V
3.5V
0.8
0
1
2
3
4
5
0
30
60
90
120
150
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.027
1.6
1.4
1.2
1
ID = 31A
VGS = 10V
ID = 15.5A
0.022
0.017
0.012
0.007
0.002
TA = 125o C
TA = 25oC
0.8
0.6
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
-50
-25
0
25
50
75
100
125
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
60
40
20
0
10
1
TA = -55o C
VGS = 0V
VDS = 5V
25oC
TA = 125oC
125oC
25oC
-55oC
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
2
2.5
3
3.5
4
4.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670S/FDB6670S Rev E (W)
Typical Characteristics (continued)
10
3600
3000
2400
1800
1200
600
f = 1MHz
VGS = 0 V
VDS = 10V
ID = 31A
15V
8
6
4
2
0
CISS
20V
COSS
CRSS
0
0
5
10
15
20
25
30
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
1000
800
600
400
200
0
SINGLE PULSE
RqJC = 2.1°C/W
TA = 25°C
10us
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
DC
VGS = 10V
SINGLE PULSE
RqJC = 2.1oC/W
TA = 25oC
1
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJC(t) = r(t) * Rq
JC
RqJC = 2.1 °C/W
0.2
0.1
0.1
P(pk
0.05
t1
t2
0.02
0.01
TJ - Tc = P * RqJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
FDP6670S/FDB6670S Rev E (W)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.01
TA = 100oC
0.001
0.0001
TA = 25oC
TIME: 12.5ns/div
0.00001
0
10
20
30
Figure 12. FDP6670S SyncFET body diode
reverse recovery characteristic.
VDS, REVERSE VOLTAGE (V)
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
FDP6670S/FDB6670S Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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