FDP6676J69Z [FAIRCHILD]

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN;


型号：	FDP6676J69Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN 局域网开关脉冲晶体管
文件：	总5页 (文件大小：82K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

April 2001

FDP6676/FDB6676

30V N-Channel Logic Level PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

• 42 A, 30 V.

R_DS(ON)= 6.0 mΩ @ V_GS= 10 V

_DS(ON)= 7.5 mΩ @ V_GS= 4.5 V

• Critical DC electrical parameters specified at

extremely low R_DS(ON)

elevated temperature

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Synchronous rectifier

• DC/DC converter

• 175°C maximum junction temperature rating

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 16

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

240

P_D

W°C

°C

Total Power Dissipation @ T_C= 25°C

0.48

Derate above 25°C

Operating and Storage Junction Temperature Range

T_J, T_STG

-65 to +175

Thermal Characteristics

R_θJC

Thermal Resistance, Junction-to-Case

1.6

°C/W

R_θJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

FDP6676

Device

FDP6676

FDB6676

Reel Size

Tube

Tape width

n/a

24mm

Quantity

800 units

FDB6676

13”

FDP6676/FDB6676 Rev C(W)

2000 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

W_DSS

I_AR

Single Pulse Drain-Source

Avalanche Energy

V_DD= 15 V,

I_D= 20 A

370

Maximum Drain-Source Avalanche

Current

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V, I_D= 250 µA

∆BVDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= 24 V,

V_GS= 16 V,

V_GS= 0 V

V_DS= 0 V

µA

I_GSSF

I_GSSR

100

–100

V_GS= –16 V, V_DS= 0 V

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

1.5

V_DS= V_GS, I_D= 250 µA

∆VGS(th)

∆T_J

Gate Threshold Voltage

Temperature Coefficient

I_D= 250 µA, Referenced to 25°C

–4.5

mV/°C

mΩ

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

V_GS= 4.5 V,

I_D= 42 A

I_D= 39 A

4.3

4.9

7.0

7.5

V_GS=10V, I_D= 42 A, T_J=125°C

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 5 V,

V_DS= 5 V

I_D= 42 A

Forward Transconductance

141

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

5324

841

V_DS= 15 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

384

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= 15 V,

V_GS= 10 V,

I_D= 1 A,

R_GEN= 6 Ω

149

Q_g

Q_gs

Q_gd

V_DS= 15 V,

I_D= 42 A,

_GS= 5 V

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

1.3

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= 42 A

0.9

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.

3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A

FDP6676/FDB6676 Rev. C(W)

Typical Characteristics

1.8

1.6

1.4

1.2

150

V_GS= 10V

3.5V

4.5V

120

V_GS= 3.0V

3.0V

3.5V

4.0V

4.5V

6.0V

10V

2.5V

0.8

120

150

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.017

1.9

I_D= 21 A

I_D=42 A

1.7

1.5

1.3

1.1

0.9

0.7

0.5

V_GS= 10V

0.014

0.011

0.008

0.005

0.002

T_A= 125^oC

T_A= 25^oC

-50

-25

100

125

150

175

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_DS= 5V

V_GS= 0V

T_A= 125^oC

25^oC

0.1

T_A= 125^oC

-55^oC

0.01

25^oC

0.001

-55^oC

0.0001

0.2

0.4

0.6

0.8

1.2

1.5

2.5

3.5

_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP6676/FDB6676 Rev. C(W)

Typical Characteristics

7000

6000

5000

4000

3000

2000

1000

V_DS= 5V

f = 1MHz

V_GS= 0 V

I_D= 42 A

10V

C_ISS

15V

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

SINGLE PULSE

_θJC= 1.6°C/W

T_C= 25°C

800

600

400

200

100ms

R_DS(ON)LIMIT

100

10s

V_GS= 10V

SINGLE PULSE

_θJC= 1.6^oC/W

_C= 25^oC

100

1000

0.1

100

t₁, TIME (sec)

_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θJC(t) = r(t) + R_θJC

R_θJC= 1.6 °C/W

0.2

0.1

0.05

0.02

0.01

P(pk)

t₁

t₂

0.01

_J- T_C= P * R_θJC(t)

SINGLE PULSE

Duty Cycle, D = t₁/ t₂

0.001

0.0001

0.001

0.01

0.1

100 1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDP6676/FDB6676 Rev. C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

PACMAN™

POP™

PowerTrench

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

SMART START™

Star* Power™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

FAST

FASTr™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

UltraFET

VCX™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

FACT Quiet Series™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H1

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