FDP7N50_0704 [FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET型号: | FDP7N50_0704 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 500V N-Channel MOSFET |
文件: | 总10页 (文件大小:472K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
April 2007
TM
UniFET
FDP7N50/FDPF7N50
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
Low gate charge ( typical 12.8 nC)
Low Crss ( typical 9 pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
TO-220F
TO-220
FDP Series
G D
S
G
D S
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FDP7N50
FDPF7N50
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
7
4.2
7 *
4.2 *
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
28
28 *
A
V
VGSS
EAS
IAR
Gate-Source voltage
±30
270
7
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.9
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate above 25°C
89
0.71
31.3
0.25
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FDP7N50
FDPF7N50
Unit
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.4
0.5
4.0
--
RθCS
RθJA
62.5
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FDP7N50/FDPF7N50 REV. B
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDP7N50
Device
FDP7N50
FDPF7N50
Package
TO-220
Reel Size
Tape Width
Quantity
--
--
--
--
50
50
FDPF7N50
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
500
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
0.5
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.5A
VDS = 40V, ID = 3.5A
3.0
--
--
5.0
0.9
--
V
Ω
S
Static Drain-Source
On-Resistance
0.76
2.5
gFS
Forward Transconductance
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
720
95
9
940
190
13.5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250V, ID = 7A
RG = 25Ω
--
--
--
--
--
--
--
6
55
20
120
60
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
ns
(Note 4, 5)
(Note 4, 5)
35
80
ns
Qg
VDS = 400V, ID = 7A
VGS = 10V
12.8
3.7
5.8
16.6
--
nC
nC
nC
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
7
28
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 7A
--
V
VGS = 0V, IS = 7A
275
0.04
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 7A, V = 50V, L=10mH, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 7A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
www.fairchildsemi.com
FDP7N50/FDPF7N50 REV. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
VGS
Top :
10.0 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
101
15
10
5
150oC
Bottom : 5.0 V
100
10-1
10-2
25oC
-55oC
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
* Note:
1. VDS = 40V
2. 250μs Pulse Test
0
0
10
20
30
40
50
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.5
101
2.0
1.5
1.0
0.5
0.0
VGS = 10V
100
VGS = 20V
150oC
25oC
* Notes :
1. VGS = 0V
* Note : TJ = 25oC
15
2. 250μs Pulse Test
10-1
0.2
0
5
10
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 100V
VDS = 250V
Crss = Cgd
1000
VDS = 400V
Ciss
Coss
6
100
Crss
4
* Notes :
1. VGS = 0 V
2. f = 1 MHz
2
10
* Note : ID = 7 A
0
100
101
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP7N50/FDPF7N50 REV. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
*Notes :
1. VGS = 0 V
∗Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 3.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
- FDP7N50
Figure 9-2. Maximum Safe Operating Area
- FDPF7N50
10 us
10 us
101
101
100 us
100 us
1 ms
10 ms
100 ms
1 ms
10 ms
100 ms
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
DC
DC
* Notes :
* Notes :
1. TC = 25 o
2. TJ = 150 o
1. TC = 25 o
C
C
2. TJ = 150 o
C
C
3. Single Pulse
3. Single Pulse
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current Vs. Case Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
www.fairchildsemi.com
FDP7N50/FDPF7N50 REV. B
Figure 11-1. Transient Thermal Response Curve - FDP7N50
100
D=0.5
0.2
0.1
10-1
PDM
0.05
t1
0.02
0.01
t2
*
N otes :
1. Zθ JC (t)
2. D uty Factor, D =t1/t2
=
1.4 oC /W M ax.
single pulse
10-4
3. TJM
-
TC
=
PDM
*
Zθ JC (t)
10-2
10-5
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve - FDPF7N50
D=0.5
100
0.2
0.1
0.05
PDM
10-1
0.02
t1
0.01
t2
*
N otes
1. ZθJC(t)
2. D uty Factor, D =t1/t2
3. TJM TC PDM θJC(t)
:
=
4.0 oC /W M ax.
-
=
* Z
single pulse
10-4
10-2
10-5
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
5
www.fairchildsemi.com
FDP7N50/FDPF7N50 REV. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP7N50/FDPF7N50 REV. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
www.fairchildsemi.com
FDP7N50/FDPF7N50 REV. B
Mechanical Dimensions
TO-220
Dimensions in Millimeters
8
www.fairchildsemi.com
FDP7N50/FDPF7N50 REV. B
Mechanical Dimensions (Continued)
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
9
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FDP7N50/FDPF7N50 REV. B
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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