FDPC8013S [FAIRCHILD]
PowerTrench® Power Clip 30 V Asymmetric Dual N-Channel MOSFET; PowerTrench®电源夹30 V非对称双N沟道MOSFET
| 型号： | FDPC8013S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PowerTrench® Power Clip 30 V Asymmetric Dual N-Channel MOSFET |
| 文件： | 总12页 (文件大小：509K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2012
FDPC8013S
PowerTrench® Power Clip
30 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Max rDS(on) = 9.6 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 22 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
Applications
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
Computing
RoHS Compliant
Communications
General Purpose Point of Load
Pin 1
V+
Pin 1
HSG
LS
GND
V+
PAD9
V+(HSD)
V+
V+
HSG
SW
GND
(HSD
GND
SW
SW
SW
LSG
GND
GND
LSG
GND
GND
(LSS
HSG
SW
SW
SW
SW
SW
SW
PAD10
GND(LSS)
Bottom
Top
3.3 mm x 3.3 mm
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
30
Q2
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
55
261b
100
97
V
V
(Note 4)
±20
Drain Current
-Continuous (Package limited)
-Continuous
TC = 25 °C
TA = 25 °C
20
ID
131a
40
A
-Pulsed
EAS
Single Pulse Avalanche Energy
(Note 3)
TA = 25 °C
TA = 25 °C
21
mJ
W
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
1.61a
0.81c
2.01b
0.91d
PD
TJ, TSTG
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
771a
1511c
5.0
631b
1351d
3.5
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ”
Tape Width
Quantity
13CF/15CF
FDPC8013S
Power Clip 33
12 mm
3000 units
1
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
I
I
D = 250 μA, VGS = 0 V
D = 1 mA, VGS = 0 V
Q1
Q2
30
30
BVDSS
Drain to Source Breakdown Voltage
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
D = 10 mA, referenced to 25 °C
Q1
Q2
16
20
mV/°C
I
V
V
DS = 24 V, VGS = 0 V
DS = 24 V, VGS = 0 V
Q1
Q2
1
500
μA
μA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current,
Forward
VGS = 20 V, VDS= 0 V
V
Q1
Q2
100
100
nA
nA
GS = 20 V, VDS= 0 V
On Characteristics
V
V
GS = VDS, ID = 250 μA
GS = VDS, ID = 1 mA
Q1
Q2
1.2
1.2
1.5
1.7
3.0
3.0
VGS(th)
Gate to Source Threshold Voltage
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
D = 10 mA, referenced to 25 °C
Q1
Q2
-5
-6
mV/°C
I
V
V
V
GS = 10 V, ID = 13 A
GS = 4.5 V, ID = 10 A
GS = 10 V, ID = 13 A,TJ =125 °C
4.6
6.7
6.6
6.4
9.6
9.2
Q1
Q2
rDS(on)
Drain to Source On Resistance
mΩ
V
V
V
GS = 10 V, ID = 26 A
GS = 4.5 V, ID = 22 A
GS = 10 V, ID = 26 A ,TJ =125 °C
1.4
2.0
1.9
1.9
2.7
2.6
V
V
DS = 5 V, ID = 13 A
DS = 5 V, ID = 26 A
Q1
Q2
53
168
gFS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
827
2785
Q1:
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
333
997
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
44
128
Q1
Q2
0.5
0.5
Switching Characteristics
Q1
Q2
6
11
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1:
Q1
Q2
2
5
VDD = 15 V, ID = 13 A, RGEN = 6 Ω
Q1
Q2
16
30
Q2:
Turn-Off Delay Time
Fall Time
ns
V
DD = 15 V, ID = 26 A, RGEN = 6 Ω
Q1
Q2
2
4
ns
Q1
Q2
13
44
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
nC
nC
nC
nC
Q1
DD = 15 V,
D = 13 A
V
I
Q1
Q2
6
21
Qg
Q1
Q2
2.2
7.2
Q2
VDD = 15 V,
Qgs
Qgd
Q1
Q2
1.9
6.6
I
D = 26 A
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V
V
GS = 0 V, IS = 13 A
GS = 0 V, IS = 26 A
(Note 2) Q1
(Note 2) Q2
0.80
0.77
1.2
1.2
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
Q1
Q2
22
29
Q1
ns
nC
IF = 13 A, di/dt = 100 A/μs
Q2
IF = 26 A, di/dt = 300 A/μs
Q1
Q2
7
30
Qrr
Reverse Recovery Charge
Notes:
2
1.R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
b. 63 °C/W when mounted on
a 1 in pad of 2 oz copper
a. 77 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2
d. 135 °C/W when mounted on a
minimum pad of 2 oz copper
c. 151 °C/W when mounted on
minimum pad of 2 oz copper
a
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
o
3. Q1 :E of 21 mJ is based on starting T = 25 C; N-ch: L = 1.2 mH, I = 6 A, V = 23 V, V = 10 V. 100% test at L= 0.1 mH, I = 14.5 A.
AS
J
AS
DD
GS
AS
o
Q2: E of 97 mJ is based on starting T = 25 C; N-ch: L = 0.6 mH, I = 18 A, V = 23 V, V = 10 V. 100% test at L= 0.1 mH, I = 32.9 A.
AS
J
AS
DD
GS
AS
4. As an N-ch device, the negative V rating is for low duty cycle pulse occurence only. No continuous rating is implied.
gs
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
3
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 3 V
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 3 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 10 V
0.0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
F i g u r e 2 . No rma li zed O n-Re si stan ce
vs Drain Current and Gate Voltage
35
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 13 A
ID = 13 A
VGS = 10 V
28
21
14
TJ = 125 oC
7
TJ = 25 o
C
0
2
3
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
40
40
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
10
VDS = 5 V
30
20
10
0
TJ = 150 o
C
1
TJ = 25 oC
TJ = 25 o
C
TJ = 150 o
C
0.1
0.01
TJ = -55 o
C
TJ = -55 o
C
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
4
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
2000
1000
10
8
Ciss
Coss
Crss
ID = 13 A
6
VDD = 10 V
VDD = 20 V
100
4
VDD = 15 V
2
f = 1 MHz
= 0 V
V
GS
10
0
0.1
1
10
30
0
3
6
9
12
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
50
60
50
40
30
20
10
0
VGS = 10 V
10
TJ = 25 oC
TJ = 100 oC
VGS = 4.5 V
TJ = 125 o
C
Limited by Package
RθJC = 5.0 oC/W
1
0.001
25
50
75
100
125
150
0.01
0.1
1
10
50
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Ambient Temperature
1000
100
10
SINGLE PULSE
RθJA = 151 oC/W
100 μs
100
10
1
THIS AREA IS
1 ms
10 ms
100 ms
1s
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
0.1
θJA = 151 oC/W
TA = 25 oC
10s
DC
R
1
0.5
0.01
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
100
101
0.01
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Si ng l e Pu ls e Max imu m
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
5
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.01
0.02
0.01
P
DM
t
1
t
SINGLE PULSE
RθJA = 151 oC/W
(Note 1b)
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
100
101
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
6
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
100
80
60
40
20
0
6
5
4
3
2
1
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 6 V
VGS = 3 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3.5 V
VGS = 4.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
60
VGS = 10 V
80 100
0.0
0.2
0.4
0.6
0.8
1.0
0
20
40
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
7
1.6
ID = 26 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
V
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
ID = 26 A
TJ = 125 oC
TJ = 25 o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
Figure 16. Normalized On-Resistance
vs Junction Temperature
100
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
1
80
60
40
20
0
VDS = 5 V
TJ = 125 o
C
TJ = 25 oC
TJ = 125 o
C
0.1
TJ = -55 o
C
TJ = 25 o
C
0.01
TJ = -55 o
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
7
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
10000
10
8
ID = 26 A
Ciss
Coss
6
1000
VDD = 10 V
VDD = 15 V
4
Crss
VDD = 20 V
2
f = 1 MHz
= 0 V
100
50
V
GS
0
0.1
1
10
30
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 21. Capacitance vs Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
120
100
80
60
40
20
0
100
10
1
VGS = 10 V
TJ = 25 o
C
VGS = 4.5 V
TJ = 100 o
C
TJ = 125 o
C
Limited by Package
RθJC = 3.5 oC/W
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
1000
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 23. Maximum Continouns Drain
Current vs Ambient Temperature
Figure 22. Unclamped Inductive
Switching Capability
3000
200
100
SINGLE PULSE
θJA = 135 oC/W
1000
100
10
100 μs
R
10
1
THIS AREA IS
LIMITED BY r
1 ms
DS(on)
10 ms
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
0.1
10s
DC
T
A = 25 oC
1
0.5
0.01
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
100
101
100 1000
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Single Pulse Maximum
Power Dissipation
Figure 24. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
8
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
0.01
1E-3
1E-4
0.01
t
1
SINGLE PULSE
θJA = 135 oC/W
t
2
NOTES:
DUTY FACTOR: D = t /t
R
1
2
(Note 1b)
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
100
101
100
1000
Figure 26. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
9
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
with
a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDPC8013S.
104
30
25
20
15
10
5
TJ = 125 o
C
103
102
10
1
TJ = 100 o
C
di/dt = 300 A/μs
TJ = 25 o
C
0
-5
100
0
5
10
15
20
25
30
150
200
250
300
350
400
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 28. SyncFETTM body diode reverse
leakage versus drain-source voltage
Figure 27. FDPC8013S SyncFETTM body
diode reverse recovery characteristic
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
10
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
www.fairchildsemi.com
11
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®
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SPM
μSerDes™
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Sync-Lock™
®*
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proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C1
12
www.fairchildsemi.com
相关型号：
FDPC8014S
Power Field-Effect Transistor, 20A I(D), 25V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWER CLIP 56, 8 PIN
FAIRCHILD
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