FDPC8014S [ONSEMI]
25V 不对称双 N 沟道 PowerTrench® Power Clip MOSFET;
| 型号： | FDPC8014S |
| 厂家： | 
ONSEMI |
| 描述： | 25V 不对称双 N 沟道 PowerTrench® Power Clip MOSFET |
| 文件： | 总13页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2014
FDPC8014S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
Q2: N-Channel
Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A
Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A
Applications
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
Computing
Communications
MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
General Purpose Point of Load
RoHS Compliant
PAD10
V+(HSD)
PIN1
PIN1
LSG
HSG
GR
LSG
SW
HSG
SW
GR
V+
SW
PAD9
GND(LSS)
SW
SW
V+
V+
SW
SW
V+
Bottom
Top
Power Clip 5X6
Pin
1
Name
H S G
GR
Description
Pin
3 , 4 , 1 0
5,6,7
Name
Description
Pin
Name
L S G
GND(LSS) Low Side Source
Description
H ig h S id e G a t e
Gate Return
V + ( H S D ) H ig h S id e D r a in
8
L o w S id e G a t e
2
SW Switching Node, Low Side Drain 9
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
25Note5
±12
Q2
25
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±12
Drain Current
-Continuous
TC = 25 °C
TA = 25 °C
60
20Note1a
110
41Note1b
ID
-Continuous
-Pulsed
A
TA = 25 °C (Note 4)
(Note 3)
75
160
EAS
Single Pulse Avalanche Energy
73
253
mJ
W
Power Dissipation for Single Operation
TC = 25 °C
TA = 25 °C 2.1Note1a
21
42
2.3 Note1b
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
6.0
3.0
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
60Note1a
130Note1c
55Note1b
120Note1d
°C/W
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
05OD/16OD
FDPC8014S
Power Clip 56
13 ”
12 mm
3000 units
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
I
I
D = 250 μA, VGS = 0 V
D = 1 mA, VGS = 0 V
Q1
Q2
25
25
BVDSS
Drain to Source Breakdown Voltage
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
D = 10 mA, referenced to 25 °C
Q1
Q2
24
24
mV/°C
I
V
V
DS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V
Q1
Q2
1
500
μA
μA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current,
Forward
VGS = 12 V/-8 V, VDS= 0 V
V
Q1
Q2
±100
±100
nA
nA
GS = 12 V/-8 V, VDS= 0 V
On Characteristics
V
V
GS = VDS, ID = 250 μA
GS = VDS, ID = 1 mA
Q1
Q2
0.8
1.1
1.3
1.4
2.5
2.5
VGS(th)
Gate to Source Threshold Voltage
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
D = 10 mA, referenced to 25 °C
Q1
Q2
-4
-3
mV/°C
I
V
V
V
GS = 10V, ID = 20 A
GS = 4.5 V, ID = 18 A
GS = 10 V, ID = 20 A,TJ =125 °C
2.8
3.4
3.9
3.8
4.7
5.3
Q1
Q2
rDS(on)
Drain to Source On Resistance
mΩ
V
V
V
GS = 10V, ID = 41 A
GS = 4.5 V, ID = 37 A
GS = 10 V, ID = 41 A ,TJ =125 °C
0.9
1.0
1.1
1.2
1.4
1.5
V
V
DS = 5 V, ID = 20 A
DS = 5 V, ID = 41 A
Q1
Q2
182
315
gFS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
1695
6580
2375
9870
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
Q1:
V
DS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
495
1720
710
2580
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2:
Q1
Q2
54
204
100
370
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
0.1
0.1
0.4
0.4
1.2
1.2
Switching Characteristics
Q1
Q2
8
16
16
28
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1:
Q1
Q2
2
6
10
11
V
DD = 13 V, ID = 20 A, RGEN = 6 Ω
Q1
Q2
24
47
38
75
Q2:
Turn-Off Delay Time
Fall Time
ns
VDD = 13 V, ID = 41 A, RGEN = 6 Ω
Q1
Q2
2
4
10
10
ns
Q1
Q2
25
93
35
130
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
Q1
nC
nC
nC
nC
Q1
Q2
11
43
16
60
V
DD = 13 V, ID
Qg
VGS = 0 V to 4.5 V
= 20 A
Q2
Q1
Q2
3.4
13
Qgs
Qgd
VDD = 13 V, ID
= 41 A
Q1
Q2
2.2
8.5
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V
V
GS = 0 V, IS = 20 A
GS = 0 V, IS = 41 A
(Note 2) Q1
(Note 2) Q2
0.8
0.8
1.2
1.2
VSD
IS
IS,Pulse
trr
Source to Drain Diode Forward Voltage
Diode continuous forward current
Diode pulse current
V
A
Q1
Q2
60
110
TC = 25 °C
Q1
Q2
75
160
A
Q1
Q2
25
36
40
58
Q1
Reverse Recovery Time
ns
nC
IF = 20 A, di/dt = 100 A/μs
Q2
IF = 41 A, di/dt = 300 A/μs
Q1
Q2
10
47
20
75
Qrr
Reverse Recovery Charge
Notes:
2
1.R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b. 55 °C/W when mounted on
a 1 in pad of 2 oz copper
a. 60 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
c. 130 °C/W when mounted on
minimum pad of 2 oz copper
a
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
o
3. Q1 :E of 73 mJ is based on starting T = 25 C; N-ch: L = 3 mH, I = 7 A, V = 30 V, V = 10 V. 100% test at L= 0.1 mH, I = 24 A.
AS
J
AS
DD
GS
AS
o
Q2: E of 253 mJ is based on starting T = 25 C; N-ch: L = 3 mH, I = 13 A, V = 25 V, V = 10 V. 100% test at L= 0.1 mH, I = 43 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id limited by junction temperature,td<=10 us. Please refer to SOA curve for more details.
5. The continuous V rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied.
DS
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
3
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
75
60
45
30
15
0
5
4
3
2
1
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
60 75
VGS = 4.5 V
45
VGS = 3.5 V
0.0
0.2
0.4
0.6
0.8
1.0
0
15
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
12
1.6
ID = 20 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = 10 V
9
6
3
0
ID = 20 A
TJ = 125 o
C
TJ = 25 o
C
1
2
3
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
100
75
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
10
1
60
45
30
15
0
TJ = 150 o
C
TJ = 150 o
C
TJ = 25 oC
0.1
TJ = 25 o
C
0.01
0.001
TJ = -55 o
C
TJ = -55 o
C
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
4
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
8
10000
1000
100
ID = 20 A
VDD = 13 V
Ciss
6
VDD = 10 V
Coss
4
VDD = 15 V
f = 1 MHz
= 0 V
2
Crss
V
GS
0
10
0
6
12
18
24
30
100
80
0.1
1
10
25
150
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
70
60
50
40
30
20
10
0
30
10
TJ = 25 o
C
VGS = 10 V
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
RθJC = 6.0 oC/W
1
0.001
0.01
0.1
1
10
25
50
75
100
125
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
5000
500
100
SINGLE PULSE
θJC = 6.0 oC/W
TC = 25 o
R
1000
100
10
10 μs
C
10
1
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 6.0 oC/W
TC = 25 oC
10 ms
DC
CURVE BENT TO
MEASURED DATA
0.1
0.1
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
5
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
SINGLE PULSE
Z
(t) = r(t) x R
= 6.0 oC/W
JC
θJC
θJc
R
θ
DUTY FACTOR: D = t1/ t2
0.01
T
-T
= P x Z (t)
J C
DM
θJC
0.005
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
6
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
160
120
80
40
0
6
4
2
0
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
VGS = 3 V
VGS = 3.5 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
0.00
0.25
0.50
0.75
1.00
0
40
80
120
160
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 14. On- Region Characteristics
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
5
1.6
ID = 41 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
ID = 41 A
3
2
TJ = 125 o
C
1
0
TJ = 25 o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs. Gate to
Source Voltage
Figure 16. Normalized On-Resistance
vs. Junction Temperature
200
100
160
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
120
80
40
0
VDS = 5 V
TJ = 125 o
C
1
TJ = 25 o
C
0.1
TJ = 25 o
C
TJ = 125 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
7
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted
10
10000
ID = 41 A
Ciss
8
VDD = 10 V
VDD = 13 V
6
Coss
1000
VDD = 15 V
4
2
f = 1 MHz
V
GS
= 0 V
Crss
0
100
0
20
40
60
80
100
0.1
1
10
25
150
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 21. Capacitance vs. Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
180
160
140
120
100
80
100
10
1
VGS = 10 V
TJ = 100 o
C
Limited by Package
RθJC = 3.0 oC/W
TJ = 25 o
C
VGS = 4.5 V
60
TJ = 125 o
C
40
20
0
25
50
75
100
125
0.001
0.01
0.1
1
10
100
1000
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive
Switching Capability
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
104
2000
1000
SINGLE PULSE
RθJC = 3.0 oC/W
C = 25 oC
10 μs
T
100
10
1
103
102
101
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.0 oC/W
C = 25 oC
10 ms
DC
CURVE BENT TO
MEASURED DATA
T
0.1
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
0.1
1
10
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Single Pulse Maximum
Power Dissipation
Figure 24. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
8
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
= 3.0 oC/W
JC
θJC
θJc
R
SINGLE PULSE
θ
DUTY FACTOR: D = t1/ t2
T
-T
= P x Z (t)
J C
DM
θJC
0.001
10-5
10-4
10-3
t, RECTANGULAR PULSE DURATION (sec)
10-2
10-1
1
Figure 26. Junction-to-Case Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
9
www.fairchildsemi.com
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverses recovery
characteristic of the FDPC8014S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10-2
50
40
TJ = 125 o
C
C
10-3
10-4
10-5
10-6
30
di/dt = 300 A/us
TJ = 100 o
20
10
0
TJ = 25 o
C
-10
100
0
5
10
15
20
25
200
300
400
500
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 27. FDPC8014S SyncFETTM Body
Diode Reverse Recovery Characteristic
Figure 28. SyncFETTM Body Diode Reverse
Leakage vs. Drain-source Voltage
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
10
www.fairchildsemi.com
5.00
4.56
4.20
5.10
4.90
0.10
C
A
1.27
2X
PKG
B
4
3
2
1
C
L
3.30
4
1
2.48
2.08
1.01
6.60
0.00
0.40
0.83
6.10
5.90
PKG
C
L
2.65
1.43
1.98
2.48
0.82
3.30
0.10
C
6
5
8
5
7
8
PIN #1
INDICATOR
2X
0.75
TOP VIEW
SEE
DETAIL A
RECOMMENDED LAND PATTERN
SIDE VIEW
0.10
0.05
C
C
A B
3.15±.05
3.81
1.27
0.51
5
6
7
8
1.57±.05
1.37±.05
0.65±.05
2.46±.05
NOTES: UNLESS OTHERWISE SPECIFIED
0.65±.05
0.53±.05
A) DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION, MO-229,
DATED 11/2001.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
0.91±.05
0.49±.05
0.48±.05
4
3
2
1
C) DIMENSIONS DO NOT INCLUDE
BURRS OR MOLD FLASH. MOLD
FLASH OR BURRS DOES NOT
EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
0.51±.05
3.90±.05
4.22±.05
5.00±.05
BOTTOM VIEW
E) DRAWING FILE NAME: PQFN08KREV2
0.10
0.08
C
C
C
0.05
0.00
0.30
0.20
0.80
0.70
SEATING
PLANE
(SCALE: 2X)
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