FDPF035N06B_F152 [FAIRCHILD]
Power Field-Effect Transistor, 88A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, SC-91A, TO-220F, FULL PACK-3;型号: | FDPF035N06B_F152 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Field-Effect Transistor, 88A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, SC-91A, TO-220F, FULL PACK-3 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:656K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
November 2013
FDPF035N06B
N-Channel PowerTrench MOSFET
60 V, 88 A, 3.5 mΩ
®
Features
Description
•
•
•
•
•
•
•
•
RDS(on) = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Low FOM RDS(on)*QG
Low Reverse Recovery Charge, Qrr
Soft Reverse Recovery Body Diode
Enables Highly Efficiency in Synchronous Rectification
Fast Switching Speed
Applications
100% UIL Tested
•
•
•
•
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
RoHS Compliant
Motor Drives and Uninterruptible Power Supplies
Renewable System
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDPF035N06B_F152
Unit
V
Drain to Source Voltage
Gate to Source Voltage
60
±20
V
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
88
ID
Drain Current
A
62
IDM
Drain Current
- Pulsed
(Note 1)
(Note 2)
(Note 3)
352
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
600
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
46.3
0.31
-55 to +175
300
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
Symbol
Parameter
Unit
FDPF035N06B_F152
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.24
62.5
oC/W
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDPF035N06B_F152
FDPF035N06B
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
60
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, Referenced to 25oC
0.03
V/oC
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
-
-
-
-
1
μA
nA
IGSS
±100
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 88 A
2
-
-
4
3.5
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
2.91
176
V
DS = 10 V, ID = 88 A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
6035
1685
55
8030
pF
pF
pF
pF
nC
nC
nC
V
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Coss
Output Capacitance
2240
Crss
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
-
-
Coss(er)
Qg(tot)
Qgs
VDS = 30 V, VGS = 0 V
2619
76
99
-
V
V
DS = 30 V, ID = 100 A,
GS = 10 V
29
Qgd
12
-
Vplateau
Qsync
Qoss
ESR
5.2
-
(Note 4)
VDS = 0 V, ID = 50 A
VDS = 30 V, VGS = 0 V
f = 1 MHz
Total Gate Charge Sync.
Output Charge
67.3
92.4
2.0
-
nC
nC
Ω
-
Equivalent Series Resistance (G-S)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
32
33
56
23
74
76
ns
ns
ns
ns
VDD = 30 V, ID = 100 A,
V
GS = 10 V, RG = 4.7 Ω
122
56
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
88
352
1.25
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 88 A
-
V
71
78
ns
nC
V
GS = 0 V, ISD = 100 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, I = 20 A, starting T = 25°C.
AS
J
3. I ≤ 100 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristics.
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
200
*Notes:
1. VDS = 10V
100
10
1
2. 250μs Pulse Test
100
25oC
-55oC
175oC
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.5V
6.0V
5.5V
5.0V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
2
0.1
1
10
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
3.5
3.0
2.5
2.0
200
100
10
1
VGS = 10V
VGS = 20V
175oC
25oC
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
10000
Ciss
VDS = 12V
VDS = 30V
VDS = 48V
8
6
4
2
0
1000
Coss
*Note:
1. VGS = 0V
100
10
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
= C
gd
oss
rss
*Note: ID = 100A
60 80 90
0.1
1
10
60
0
20
40
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.6
1.4
1.2
1.0
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.8
2. ID = 250μA
2. ID = 88A
0.6
-100
0.90
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
100
VGS = 10V
100
80
60
40
20
0
100μs
1ms
10
10ms
100ms
DC
Operation in This Area
is Limited by R DS(on)
1
SINGLE PULSE
T
C = 25oC
0.1
TJ = 175oC
RθJC = 3.24oC/W
RθJC = 3.24oC/W
0.01
0.1
1
10
100
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
3.0
2.5
2.0
1.5
1.0
0.5
0.0
200
100
10
1
TJ = 25 o
C
TJ = 150 o
C
0.001 0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
4
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
4
1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
Single pulse
t2
*Notes:
0.1
1. ZθJC(t) = 3.24oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
10-5
10-4
10-3
10-2
10-1
1
t , Rectangular Pulse Duration [sec]
1
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
7
VCC
Driver
VGS
(Driver)
t
t
VGS
(DUT)
10V
VDD
VR
G
DUT
RG
1
Qsync =
t dt
( )
⋅ V
RG
VGS
RG
Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
8
Mechanical Dimensions
Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Takcheong
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
9
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
10
相关型号:
FDPF10N50UT
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