FDPF20N50F [FAIRCHILD]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | FDPF20N50F |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总10页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2007
TM
UniFET
FDP20N50F / FDPF20N50F
tm
N-Channel MOSFET
500V, 20A, 0.26Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 0.21Ω ( Typ.)@ VGS = 10V, ID = 10A
Low gate charge ( Typ. 51.7nC)
Low Crss ( Typ. 33.5pF)
Fast switching
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
100% avalanche tested
Improve dv/dt capability
RoHS compliant
D
G
TO-220
FDP Series
TO-220F
FDPF Series
G
S
D
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
FDP20N50F FDPF20N50F
Units
Drain to Source Voltage
Gate to Source Voltage
500
±30
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- P uls ed
20
12.9
80
20*
12.9*
80*
ID
D r a in C u r r e n t
A
IDM
D rai n Cur rent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
1110
20
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
25
mJ
V/ns
W
W/oC
oC
4.5
(TC = 25oC)
- Derate above 25oC
250
2.0
38.5
0.3
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
FDP20N50F FDPF20N50F
Units
RθJC
RθCS
RθJA
0.5
0.5
3.3
-
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP20N50F / FDPF20N50F Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP20N50F
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP20N50F
FDPF20N50F
-
-
-
-
50
50
FDPF20N50F
TO-220F
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
500
-
-
-
-
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, Referenced to 25oC
0.7
V/oC
/
ΔTJ
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
1
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 400V, TC = 125oC
10
IGSS
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 10A
VDS = 20V, ID = 10A
3.0
-
-
5.0
0.26
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
0.21
25
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
2550
350
27
3390
465
40
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
50
65
V
V
DS = 400V, ID = 20A
GS = 10V
14
-
Qgd
Gate to Drain “Miller” Charge
-
20
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
45
120
100
60
100
250
210
130
ns
ns
ns
ns
VDD = 250V, ID = 20A
G = 25Ω
R
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
20
80
1.5
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 20A
-
V
154
0.5
ns
μC
VGS = 0V, ISD = 20A
dIF/dt = 100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, I = 20A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 20A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
2
FDP20N50F / FDPF20N50F Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
80
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
150oC
10
5.5 V
25oC
10
1
*Notes:
*Notes:
1. 250μs Pulse Test
1. VDS = 20V
2. TC = 25oC
2. 250μs Pulse Test
1
0.3
0.1
4
5
6
7
8
1
10
20
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.5
400
100
0.4
150oC
25oC
10
VGS = 10V
0.3
VGS = 20V
0.2
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
50
ID, Drain Current [A]
2. 250μs Pulse Test
1
0.0
0.1
0.5
1.0
1.5
2.0
2.5
0
25
75
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
6000
4500
3000
1500
0
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 125V
VDS = 250V
VDS = 400V
= C + C
ds gd
= C
gd
oss
rss
Coss
8
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Crss
*Note: ID = 20A
40 50
0.1
1
10
50
0
10
20
30
60
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
FDP20N50F / FDPF20N50F Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDP20N50F
200
1.2
1.1
1.0
100
10 μs
100 μs
1 ms
10
1
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.9
0.1
0.01
*Notes:
1. VGS = 0V
2. ID = 1mA
3. Single Pulse
0.8
-100
1
10
100
800
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
- FDPF20N50F
Figure 10. Maximum Drain Current
vs. Case Temperature
200
100
25
20
15
10
5
40μs
100μs
10
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
1. TC = 25oC
0.1
2. TJ = 150oC
3. Single Pulse
0.01
0
25
1
10
100
800
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve - FDP20N50F
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
*Notes:
0.01
1. ZθJC(t) = 0.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
0.002
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
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4
FDP20N50F / FDPF20N50F Rev. A
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50F
5
0.5
1
0.2
0.1
PDM
0.05
t1
t2
0.1
0.02
0.01
*Notes:
1. ZθJC(t) = 3.3oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-4
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
5
FDP20N50F / FDPF20N50F Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
6
FDP20N50F / FDPF20N50F Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
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V
D
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a
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P
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W
i d t h
V
- - - - - - - - - - - - - - - - - - - - - - - - - -
D
=
G
S
G
a
t e
P
u
l s
e
P
e
r i o
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1
0
V
(
D
r i v
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)
I F
,
B
o
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i o
d
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F
o
r w
a
r d
C
u
r r e
n
t
M
I
S
D
d
i / d
t
(
D
U
T
)
I R
d
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B
o
d
y
D
e
i o
R
e
R
e
v
e
r s
d
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C
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r r e
n
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D
S
(
D
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)
B
o
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S
D
i o
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o
v
e
r y
v
/ d
t
V
V
D
D
D
B
o
d
y
D
i o
d
e
www.fairchildsemi.com
7
FDP20N50F / FDPF20N50F Rev. A
Mechanical Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
www.fairchildsemi.com
8
FDP20N50F / FDPF20N50F Rev. A
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
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9
FDP20N50F / FDPF20N50F Rev. A
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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