首页 |元器件品牌

FGH40N120ANTU [FAIRCHILD]

暂无描述;
FGH40N120ANTU
型号： FGH40N120ANTU
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

暂无描述

晶体 晶体管 功率控制 瞄准线 双极性晶体管 栅 局域网
文件： 总7页 (文件大小：509K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
July 2008  
®
IGBT  
FGH40N120AN  
1200V NPT IGBT  
Features  
Description  
•
•
•
•
High speed switching  
Employing NPT technology, Fairchild’s AN series of IGBTs pro-  
vides low conduction and switching losses. The AN series offers  
an solution for application such as induction heating (IH), motor  
control, general purpose inverters and uninterruptible power  
supplies (UPS).  
Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A  
High input impedance  
RoHS complaint  
Applications  
Induction Heating, UPS, AC & DC motor controls and general  
purpose inverters.  
E
C
C
G
G
COLLECTOR  
(FLANGE)  
E
Absolute Maximum Ratings  
Symbol  
Parameter  
FGH40N120AN  
Units  
VCES  
VGES  
Collector-Emitter Voltage  
1200  
±25  
64  
V
V
Gate-Emitter Voltage  
Collector Current  
@TC = 25°C  
@TC = 100°C  
A
IC  
ICM(1)  
PD  
Collector Current  
40  
A
Pulsed Collector Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Short Circuit Withstand Time,  
160  
417  
167  
A
@TC = 25°C  
@TC = 100°C  
W
W
SCWT  
10  
µs  
V
CE = 600V, VGE = 15V, TC = 125°C  
TJ  
Operating Junction Temperature  
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 seconds  
TL  
300  
°C  
Notes:  
(1) Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
0.3  
Units  
RθJC(IGBT)  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
--  
°C/W  
°C/W  
40  
©2006 Fairchild Semiconductor Corporation  
FGH40N120AN Rev. A2  
1
www.fairchildsemi.com  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
FGH40N120AN  
FGH40N120AN  
TO-247  
-
-
30  
Electrical Characteristics of the IGBT  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
BVCES  
Collector-Emitter Breakdown Voltage  
VGE = 0V, IC = 1mA  
1200  
--  
--  
--  
--  
V
BVCES  
∆TJ  
/
Temperature Coefficient of Breakdown  
Voltage  
V
GE = 0V, IC = 1mA  
0.6  
V/°C  
ICES  
IGES  
Collector Cut-Off Current  
G-E Leakage Current  
VCE = VCES, VGE = 0V  
VGE = VGES, VCE = 0V  
--  
--  
--  
--  
1
mA  
nA  
±250  
On Characteristics  
VGE(th)  
G-E Threshold Voltage  
IC = 250µA, VCE = VGE  
3.5  
--  
5.5  
2.6  
7.5  
3.2  
V
V
I
C = 40A, VGE = 15V  
IC = 40A, VGE = 15V,  
C = 125°C  
IC = 64A, VGE = 15V  
Collector to Emitter  
Saturation Voltage  
VCE(sat)  
--  
--  
2.9  
--  
--  
V
V
T
3.15  
Dynamic Characteristics  
Cies  
Coes  
cres  
Input Capacitance  
--  
--  
--  
3200  
370  
--  
--  
--  
pF  
pF  
pF  
V
CE = 30V, VGE = 0V  
Output Capacitance  
f = 1MHz  
Reverse Transfer Capacitance  
125  
Switching Characteristics  
td(on) Turn-On Delay Time  
tr  
td(off)  
tf  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
15  
20  
--  
--  
ns  
ns  
Rise Time  
Turn-Off Delay Time  
Fall Time  
110  
40  
--  
ns  
V
R
CC = 600V, IC = 40A,  
G = 5Ω, VGE = 15V,  
Inductive Load, TC = 25°C  
80  
3.45  
1.65  
5.1  
--  
ns  
Eon  
Eoff  
Ets  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
2.3  
1.1  
3.4  
20  
mJ  
mJ  
mJ  
ns  
td(on)  
tr  
td(off)  
tf  
25  
--  
ns  
Turn-Off Delay Time  
Fall Time  
120  
45  
--  
ns  
V
CC = 600V, IC = 40A,  
G = 5Ω, VGE = 15V,  
Inductive Load, TC = 125°C  
R
--  
ns  
Eon  
Eoff  
Ets  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Total Gate charge  
Gate-Emitter Charge  
Gate-Collector Charge  
2.5  
1.8  
4.3  
220  
25  
--  
mJ  
mJ  
mJ  
nC  
nC  
nC  
--  
--  
Qg  
--  
V
V
CE = 600V, IC = 40A,  
GE = 15V  
Qge  
Qgc  
--  
130  
--  
2
www.fairchildsemi.com  
FGH40N120AN Rev. A2  
Typical Performance Characteristics  
Figure 1. Typical Output Characteristics  
Figure 2. Typical Saturation Voltage  
Characteristics  
300  
160  
TC = 25°C  
20V  
Common Emitter  
VGE = 15V  
17V  
15V  
250  
TC  
TC = 125oC  
=
25oC  
120  
80  
40  
0
200  
150  
100  
50  
12V  
VGE = 10V  
0
0
2
4
6
8
10  
0
2
4
6
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
Figure 3. Saturation Voltage vs. Case  
Figure 4. Load Current vs. Frequency  
Temperature at Variant Current Level  
5
4
3
2
1
70  
Common Emitter  
VGE = 15V  
VCC = 600V  
load Current : peak of square wave  
56  
80A  
42  
28  
40A  
IC = 20A  
Duty cycle : 50%  
TC = 100oC  
14  
0
Powe Dissipation = 100W  
0.1  
1
10  
Frequency [kHz]  
100  
1000  
25  
50  
75  
100  
125  
Case Temperature, TC [°C]  
Figure 5. Saturation Voltage vs. V  
Figure 6. Saturation Voltage vs. V  
GE  
GE  
20  
20  
Common Emitter  
Common Emitter  
TC = 125°C  
TC = 25°C  
16  
16  
12  
12  
8
8
80A  
80A  
4
4
40A  
40A  
IC = 20A  
IC = 20A  
0
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
Gate-Emitter Voltage, VGE [V]  
Gate-Emitter Voltage, VGE [V]  
3
www.fairchildsemi.com  
FGH40N120AN Rev. A2  
Typical Performance Characteristics (Continued)  
Figure 7. Capacitance Characteristics  
Figure 8. Turn-On Characteristics vs. Gate  
Resistance  
6000  
Common Emitter  
VGE = 0V, f = 1MHz  
TC = 25°C  
5000  
4000  
3000  
2000  
1000  
0
100  
Ciss  
tr  
Common Emitter  
td(on)  
VCC = 600V, VGE = ±15V  
Coss  
Crss  
IC = 40A  
TC = 25°C  
TC = 125°C  
10  
0
10  
20  
30  
40  
50  
60  
70  
1
10  
Gate Resistance, RG [Ω]  
Collector-Emitter Voltage, VCE [V]  
Figure 9. Turn-Off Characteristics vs.  
Gate Resistance  
Figure 10. Switching Loss vs. Gate Resistance  
Common Emitter  
VCC = 600V, VGE = ±15V, IC = 40A  
Common Emitter  
VCC = 600V, VGE = ±15V  
1000  
TC = 25°C  
IC = 40A  
td(off)  
TC = 125°C  
TC = 25°C  
10  
TC = 125°C  
Eon  
100  
Eoff  
tf  
1
10  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
Gate Resistance, RG [Ω]  
Gate Resistance, RG [Ω]  
Figure 11. Turn-On Characteristics vs.  
Collector Current  
Figure 12. Turn-Off Characteristics vs.  
Collector Current  
Common Emitter  
Common Emitter  
VGE = ±15V, RG = 5Ω  
VGE = ±15V, RG = 5Ω  
TC = 25°C  
TC = 25°C  
100  
tr  
TC = 125°C  
TC = 125°C  
td(off)  
100  
tf  
td(on)  
10  
20  
30  
40  
50  
60  
70  
80  
20  
30  
40  
50  
60  
70  
80  
Collector Current, IC [A]  
Collector Current, IC [A]  
4
www.fairchildsemi.com  
FGH40N120AN Rev. A2  
Typical Performance Characteristics (Continued)  
Figure 13. Switching Loss vs. Collector Current  
Figure 14. Gate Charge Characteristics  
16  
Common Emitter  
Common Emitter  
VGE = ±15V, RG = 5Ω  
RL = 15Ω  
14  
Vcc = 200V  
TC = 25°C  
TC = 25°C  
10  
Eon  
Eoff  
600V  
TC = 125°C  
12  
10  
400V  
8
6
4
2
0
1
0.1  
20  
30  
40  
50  
60  
70  
80  
0
50  
100  
150  
200  
250  
Collector Current, IC [A]  
Gate Charge, Qg [nC]  
Figure 15. SOA Characteristics  
Figure 16. Turn-Off SOA  
500  
IC MAX (Pulse)  
10µs  
100  
100  
100µs  
10  
IC MAX (Continuous)  
1ms  
10 ms  
1
0.1  
DC Operation  
10  
*Notes:  
1. TC = 25oC  
2. TJ = 150oC  
Safe Operating Area  
VGE = 15V, TC = 125oC  
3. Single Pulse  
0.01  
1
1
10  
100  
1000  
2000  
1
10  
100  
1000  
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
Figure 17. Transient Thermal Impedance of IGBT  
1
0.1  
0.5  
0.2  
0.1  
0.05  
PDM  
0.01  
1E-3  
0.02  
0.01  
t1  
t2  
single pulse  
Duty Factor, D = t1/t2  
Peak Tj = Pdm x Zthjc + TC  
1E-5  
1E-4  
1E-3  
0.01  
0.1  
1
10  
Rectangular Pulse Duration [sec]  
5
www.fairchildsemi.com  
FGH40N120AN Rev. A2  
Mechanical Dimensions  
TO-247AB (FKS PKG CODE 001)  
Dimensions in Millimeters  
www.fairchildsemi.com  
6
FGH40N120AN Rev. A2  
TRADEMARKS  
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and  
is not intended to be an exhaustive list of all such trademarks.  
ACEx®  
Green FPS™  
Green FPS™ e-Series™  
GTO™  
i-Lo™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Power247®  
SuperSOT™-8  
SyncFET™  
Build it Now™  
CorePLUS™  
CROSSVOLT™  
CTL™  
POWEREDGE®  
Power-SPM™  
PowerTrench®  
Programmable Active Droop™  
QFET®  
The Power Franchise®  
Current Transfer Logic™  
TinyBoost™  
TinyBuck™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
µSerDes™  
UHC®  
EcoSPARK®  
QS™  
®
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
SMART START™  
SPM®  
STEALTH™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
Fairchild®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
MicroPak™  
MillerDrive™  
Motion-SPM™  
OPTOLOGIC®  
FAST®  
FastvCore™  
FPS™  
OPTOPLANAR®  
®
UniFET™  
VCX™  
FRFET®  
PDP-SPM™  
Power220®  
Global Power ResourceSM  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF  
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE  
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF  
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE  
PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to result  
in a significant injury to the user.  
2. A critical component in any component of a life support,  
device, or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or  
system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
This datasheet contains the design specifications for product  
development. Specifications may change in any manner without notice.  
Advance Information  
Formative or In Design  
This datasheet contains preliminary data; supplementary data will be pub-  
lished at a later date. Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve design.  
Preliminary  
First Production  
Full Production  
Not In Production  
This datasheet contains final specifications. Fairchild Semiconductor  
reserves the right to make changes at any time without notice to improve  
design.  
No Identification Needed  
Obsolete  
This datasheet contains specifications on a product that has been discontin-  
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-  
mation only.  
Rev. I31  
7
www.fairchildsemi.com  
FGH40N120AN Rev. A2  

相关型号：

SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

 Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明