FGH40N120AN [FAIRCHILD]
1200V NPT IGBT; 1200V NPT IGBT型号: | FGH40N120AN |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 1200V NPT IGBT |
文件: | 总7页 (文件大小:509K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
July 2008
®
IGBT
FGH40N120AN
1200V NPT IGBT
Features
Description
•
•
•
•
High speed switching
Employing NPT technology, Fairchild’s AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
an solution for application such as induction heating (IH), motor
control, general purpose inverters and uninterruptible power
supplies (UPS).
Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
High input impedance
RoHS complaint
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Parameter
FGH40N120AN
Units
VCES
VGES
Collector-Emitter Voltage
1200
±25
64
V
V
Gate-Emitter Voltage
Collector Current
@TC = 25°C
@TC = 100°C
A
IC
ICM(1)
PD
Collector Current
40
A
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
160
417
167
A
@TC = 25°C
@TC = 100°C
W
W
SCWT
10
µs
V
CE = 600V, VGE = 15V, TC = 125°C
TJ
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
°C
°C
TSTG
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
TL
300
°C
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.3
Units
RθJC(IGBT)
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
°C/W
°C/W
40
©2006 Fairchild Semiconductor Corporation
FGH40N120AN Rev. A2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH40N120AN
FGH40N120AN
TO-247
-
-
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1200
--
--
--
--
V
BVCES
∆TJ
/
Temperature Coefficient of Breakdown
Voltage
V
GE = 0V, IC = 1mA
0.6
V/°C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
1
mA
nA
±250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
3.5
--
5.5
2.6
7.5
3.2
V
V
I
C = 40A, VGE = 15V
IC = 40A, VGE = 15V,
C = 125°C
IC = 64A, VGE = 15V
Collector to Emitter
Saturation Voltage
VCE(sat)
--
--
2.9
--
--
V
V
T
3.15
Dynamic Characteristics
Cies
Coes
cres
Input Capacitance
--
--
--
3200
370
--
--
--
pF
pF
pF
V
CE = 30V, VGE = 0V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
125
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
110
40
--
ns
V
R
CC = 600V, IC = 40A,
G = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
80
3.45
1.65
5.1
--
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
2.3
1.1
3.4
20
mJ
mJ
mJ
ns
td(on)
tr
td(off)
tf
25
--
ns
Turn-Off Delay Time
Fall Time
120
45
--
ns
V
CC = 600V, IC = 40A,
G = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
R
--
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate charge
Gate-Emitter Charge
Gate-Collector Charge
2.5
1.8
4.3
220
25
--
mJ
mJ
mJ
nC
nC
nC
--
--
Qg
--
V
V
CE = 600V, IC = 40A,
GE = 15V
Qge
Qgc
--
130
--
2
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FGH40N120AN Rev. A2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
300
160
TC = 25°C
20V
Common Emitter
VGE = 15V
17V
15V
250
TC
TC = 125oC
=
25oC
120
80
40
0
200
150
100
50
12V
VGE = 10V
0
0
2
4
6
8
10
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Load Current vs. Frequency
Temperature at Variant Current Level
5
4
3
2
1
70
Common Emitter
VGE = 15V
VCC = 600V
load Current : peak of square wave
56
80A
42
28
40A
IC = 20A
Duty cycle : 50%
TC = 100oC
14
0
Powe Dissipation = 100W
0.1
1
10
Frequency [kHz]
100
1000
25
50
75
100
125
Case Temperature, TC [°C]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
Common Emitter
TC = 125°C
TC = 25°C
16
16
12
12
8
8
80A
80A
4
4
40A
40A
IC = 20A
IC = 20A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
3
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FGH40N120AN Rev. A2
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
5000
4000
3000
2000
1000
0
100
Ciss
tr
Common Emitter
td(on)
VCC = 600V, VGE = ±15V
Coss
Crss
IC = 40A
TC = 25°C
TC = 125°C
10
0
10
20
30
40
50
60
70
1
10
Gate Resistance, RG [Ω]
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = ±15V, IC = 40A
Common Emitter
VCC = 600V, VGE = ±15V
1000
TC = 25°C
IC = 40A
td(off)
TC = 125°C
TC = 25°C
10
TC = 125°C
Eon
100
Eoff
tf
1
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Common Emitter
VGE = ±15V, RG = 5Ω
VGE = ±15V, RG = 5Ω
TC = 25°C
TC = 25°C
100
tr
TC = 125°C
TC = 125°C
td(off)
100
tf
td(on)
10
20
30
40
50
60
70
80
20
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
4
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FGH40N120AN Rev. A2
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
16
Common Emitter
Common Emitter
VGE = ±15V, RG = 5Ω
RL = 15Ω
14
Vcc = 200V
TC = 25°C
TC = 25°C
10
Eon
Eoff
600V
TC = 125°C
12
10
400V
8
6
4
2
0
1
0.1
20
30
40
50
60
70
80
0
50
100
150
200
250
Collector Current, IC [A]
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
500
IC MAX (Pulse)
10µs
100
100
100µs
10
IC MAX (Continuous)
1ms
10 ms
1
0.1
DC Operation
10
*Notes:
1. TC = 25oC
2. TJ = 150oC
Safe Operating Area
VGE = 15V, TC = 125oC
3. Single Pulse
0.01
1
1
10
100
1000
2000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
PDM
0.01
1E-3
0.02
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
5
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FGH40N120AN Rev. A2
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
www.fairchildsemi.com
6
FGH40N120AN Rev. A2
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which, (a) are intended for surgical implant into the body or
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
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2. A critical component in any component of a life support,
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system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
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changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
7
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FGH40N120AN Rev. A2
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