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FGH40N60SFDTU [FAIRCHILD]

600 V, 40 A Field Stop IGBT; 600 V ， 40 A场截止IGBT
FGH40N60SFDTU
型号： FGH40N60SFDTU
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

600 V, 40 A Field Stop IGBT
600 V ， 40 A场截止IGBT

双极性晶体管
文件： 总9页 (文件大小：291K)
中文：  中文翻译
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April 2013  
FGH40N60SFD  
600 V, 40 A Field Stop IGBT  
Features  
General Description  
•
•
•
•
•
High Current Capability  
Using novel field stop IGBT technology, Fairchild®’s field stop  
IGBTs offer the optimum performance for solar inverter, UPS,  
welder, microwave oven, telecom, ESS and PFC applications  
where low conduction and switching losses are essential.  
Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A  
High Input Impedance  
Fast Switching  
RoHS Compliant  
Applications  
•
Solar Inverter, UPS, Welder, PFC, Microwave Oven, Tele-  
com, ESS  
C
E
C
G
G
COLLECTOR  
(FLANGE)  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
600  
Unit  
VCES  
VGES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
V
V
A
A
A
20  
80  
@ TC = 25oC  
@ TC = 100oC  
IC  
ICM (1)  
PD  
Collector Current  
40  
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
Pulsed Collector Current  
120  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
290  
W
W
oC  
oC  
116  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive rating: Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RJC(IGBT)  
RJC(Diode)  
RJA  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Typ.  
Max.  
0.43  
1.45  
40  
Unit  
oC/W  
oC/W  
oC/W  
-
-
-
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
1
www.fairchildsemi.com  
Package Marking and Ordering Information  
Max Qty  
Packaging  
Type  
Device Marking  
Device  
Package  
Qty per Tube  
per Box  
FGH40N60SFD  
FGH40N60SFDTU  
TO-247  
Tube  
30ea  
-
Electrical Characteristics of the IGBT  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Off Characteristics  
BVCES  
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A  
600  
-
-
-
-
V
BVCES  
TJ  
Temperature Coefficient of Breakdown  
0.6  
V/oC  
V
GE = 0V, IC = 250A  
Voltage  
ICES  
IGES  
Collector Cut-Off Current  
G-E Leakage Current  
VCE = VCES, VGE = 0V  
VGE = VGES, VCE = 0V  
-
-
-
-
250  
A  
±400  
nA  
On Characteristics  
VGE(th)  
G-E Threshold Voltage  
IC = 250A, VCE = VGE  
IC = 40A, VGE = 15V  
IC = 40A, VGE = 15V,  
4.0  
-
5.0  
2.3  
6.5  
2.9  
V
V
VCE(sat)  
Collector to Emitter Saturation Voltage  
-
2.5  
-
V
T
C = 125oC  
Dynamic Characteristics  
Cies  
Coes  
Cres  
Input Capacitance  
-
-
-
2110  
200  
60  
-
-
-
pF  
pF  
pF  
V
CE = 30V VGE = 0V,  
,
Output Capacitance  
f = 1MHz  
Reverse Transfer Capacitance  
Switching Characteristics  
td(on) Turn-On Delay Time  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25  
42  
-
-
ns  
ns  
Rise Time  
Turn-Off Delay Time  
Fall Time  
115  
27  
-
ns  
VCC = 400V, IC = 40A,  
R
G = 10, VGE = 15V,  
54  
-
ns  
Inductive Load, TC = 25oC  
Eon  
Eoff  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
1.13  
0.31  
1.44  
24  
mJ  
mJ  
mJ  
ns  
-
-
-
43  
-
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
120  
30  
-
ns  
VCC = 400V, IC = 40A,  
G = 10, VGE = 15V,  
Inductive Load, TC = 125oC  
R
-
ns  
Eon  
Eoff  
Ets  
Qg  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Total Gate Charge  
Gate to Emitter Charge  
Gate to Collector Charge  
1.14  
0.48  
1.62  
120  
14  
-
mJ  
mJ  
mJ  
nC  
nC  
nC  
-
-
-
V
V
CE = 400V, IC = 40A,  
GE = 15V  
Qge  
Qgc  
-
58  
-
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
2
www.fairchildsemi.com  
Electrical Characteristics of the Diode  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
1.95  
1.85  
45  
Max Unit  
T
T
T
C = 25oC  
C = 125oC  
C = 25oC  
-
-
-
-
-
-
2.6  
VFM  
Diode Forward Voltage  
IF = 20A  
V
-
-
trr  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
ns  
TC = 125oC  
C = 25oC  
TC = 125oC  
140  
75  
-
IES =20A, dIES/dt = 200A/s  
T
-
Qrr  
nC  
375  
-
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
3
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 1. Typical Output Characteristics  
Figure 2. Typical Output Characteristics  
120  
120  
TC = 25oC  
TC = 125oC  
20V  
15V  
20V  
100  
80  
60  
40  
20  
0
15V  
100  
80  
60  
40  
20  
0
12V  
12V  
10V  
10V  
VGE = 8V  
VGE = 8V  
4.5  
0.0  
1.5  
3.0  
6.0  
0.0  
1.5  
3.0  
4.5  
6.0  
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
Figure 3. Typical Saturation Voltage  
Characteristics  
Figure 4. Transfer Characteristics  
120  
80  
Common Emitter  
VCE = 20V  
TC = 25oC  
Common Emitter  
VGE = 15V  
TC = 25oC  
TC = 125oC  
TC = 125oC  
80  
60  
40  
20  
0
40  
0
6
8
10  
12  
13  
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]  
Gate-Emitter Voltage,VGE [V]  
Figure 5. Saturation Voltage vs. Case  
Figure 6. Saturation Voltage vs. V  
GE  
Temperature at Variant Current Level  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
20  
Common Emitter  
VGE = 15V  
Common Emitter  
TC = -40oC  
16  
12  
8
80A  
40A  
80A  
IC = 20A  
40A  
12  
4
IC = 20A  
8
0
25  
50  
75  
100  
125  
4
16  
20  
o
Gate-Emitter Voltage, VGE [V]  
Collector-EmitterCase Temperature, TC [ C]  
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
4
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 7. Saturation Voltage vs. V  
Figure 8. Saturation Voltage vs. V  
GE  
GE  
20  
20  
Common Emitter  
TC = 125oC  
Common Emitter  
TC = 25oC  
16  
12  
8
16  
12  
8
40A  
80A  
80A  
40A  
4
4
IC = 20A  
8
IC = 20A  
8
0
0
4
12  
16  
20  
4
12  
16  
20  
Gate-Emitter Voltage, VGE [V]  
Gate-Emitter Voltage, VGE [V]  
Figure 9. Capacitance Characteristics  
Figure 10. Gate charge Characteristics  
15  
5000  
Common Emitter  
TC = 25oC  
Common Emitter  
VGE = 0V, f = 1MHz  
TC = 25oC  
12  
4000  
3000  
2000  
1000  
0
Ciss  
200V  
Vcc = 100V  
300V  
9
6
3
0
Coss  
Crss  
0
50  
100  
150  
0.1  
1
10  
30  
Collector-Emitter Voltage, VCE [V]  
Gate Charge, Qg [nC]  
Figure 11. SOA Characteristics  
Figure 12. Turn-on Characteristics vs.  
Gate Resistance  
400  
100  
200  
10s  
100  
100s  
10  
1ms  
10 ms  
DC  
tr  
1
Common Emitter  
VCC = 400V, VGE = 15V  
Single Nonrepetitive  
o
Pulse T = 25 C  
C
Curves must be derated  
linearly with increase  
in temperature  
td(on)  
IC = 40A  
TC = 25oC  
TC = 125oC  
0.1  
0.01  
10  
1
10  
100  
1000  
0
10  
20  
30  
40  
50  
Collector-Emitter Voltage, VCE [V]  
Gate Resistance, RG []  
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
5
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 13. Turn-off Characteristics vs.  
Gate Resistance  
Figure 14. Turn-on Characteristics vs.  
Collector Current  
500  
5500  
Common Emitter  
VGE = 15V, RG = 10  
Common Emitter  
VCC = 400V, VGE = 15V  
TC = 25oC  
IC = 40A  
TC = 25oC  
TC = 125oC  
1000  
TC = 125oC  
tr  
td(off)  
100  
100  
td(on)  
tf  
10  
20  
10  
40  
60  
80  
0
10  
20  
30  
40  
50  
Collector Current, IC [A]  
Gate Resistance, RG []  
Figure 15. Turn-off Characteristics vs.  
Collector Current  
Figure 16. Switching Loss vs. Gate Resistance  
10  
500  
Common Emitter  
Common Emitter  
VCC = 400V, VGE = 15V  
VGE = 15V, RG = 10  
TC = 25oC  
IC = 40A  
TC = 25oC  
TC = 125oC  
TC = 125oC  
td(off)  
Eon  
100  
tf  
1
Eoff  
0.2  
10  
20  
0
10  
20  
30  
40  
50  
40  
60  
80  
Gate Resistance, RG []  
Collector Current, IC [A]  
Figure 17. Switching Loss vs. Collector Current  
Figure 18. Turn off Switching  
SOA Characteristics  
30  
200  
Common Emitter  
VGE = 15V, RG = 10  
TC = 25oC  
TC = 125oC  
100  
10  
Eon  
Eoff  
1
10  
Safe Operating Area  
VGE = 15V, TC = 125oC  
0.1  
1
1
10  
100  
1000  
20  
30  
40  
50  
60  
70  
80  
Collector-Emitter Voltage, VCE [V]  
Collector Current, IC [A]  
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
6
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 19. Forward Characteristics  
Figure 20. Typical Reverse Current vs.  
Reverse Voltage  
80  
200  
100  
TJ = 125oC  
TJ = 125oC  
10  
10  
TJ = 25oC  
TJ = 75oC  
TJ = 75oC  
1
TC = 25oC  
1
0.1  
TJ = 25oC  
TC = 75oC  
TC = 125oC  
0.2  
0.01  
0
1
2
3
4
50  
200  
400  
600  
Forward Voltage, VF [V]  
Reverse Voltage, VR [V]  
Figure 21. Stored Charge  
Figure 22. Reverse Recovery Time  
60  
100  
200A/s  
80  
50  
di/dt = 100A/s  
60  
200A/s  
di/dt = 100A/s  
40  
40  
30  
20  
5
10  
20  
30  
40  
5
10  
20  
30  
40  
Forward Current, IF [A]  
Forward Current, IF [A]  
Figure 23.Transient Thermal Impedance of IGBT  
1
0.1  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
PDM  
0.01  
t1  
single pulse  
t2  
Duty Factor, D = t1/t2  
Peak Tj = Pdm x Zthjc + TC  
1E-3  
1E-5  
1E-4  
1E-3  
0.01  
0.1  
1
Rectangular Pulse Duration [sec]  
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
7
www.fairchildsemi.com  
Mechanical Dimensions  
TO-247A03  
©2008 Fairchild Semiconductor Corporation  
8
www.fairchildsemi.com  
FGH40N60SFD Rev.C0  
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
2Cool™  
AccuPower™  
AX-CAP *  
BitSiC™  
Build it Now™  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
DEUXPEED  
Dual Cool™  
EcoSPARK  
EfficentMax™  
ESBC™  
FPS™  
F-PFS™  
FRFET  
Global Power Resource  
Green Bridge™  
Green FPS™  
Green FPS™ e-Series™  
Gmax™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
Sync-Lock™  
®*  
®
tm  
®
®
®
PowerTrench  
PowerXS™  
Programmable Active Droop™  
QFET  
QS™  
Quiet Series™  
RapidConfigure™  
™
SM  
TinyBoost™  
TinyBuck™  
TinyCalc™  
®
®
TinyLogic  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
®
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™  
®
TranSiC  
®
and Better™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MicroPak2™  
MillerDrive™  
MotionMax™  
mWSaver™  
OptoHiT™  
SignalWise™  
SmartMax™  
TriFault Detect™  
TRUECURRENT *  
SerDes™  
®
SMART START™  
Solutions for Your Success™  
®
®
SPM  
®
STEALTH™  
SuperFET  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
Fairchild  
®
®
UHC  
®
Fairchild Semiconductor  
FACT Quiet Series™  
Ultra FRFET™  
UniFET™  
VCX™  
VisualMax™  
VoltagePlus™  
XS™  
®
FACT  
FAST  
®
®
®
OPTOLOGIC  
OPTOPLANAR  
SupreMOS  
SyncFET™  
FastvCore™  
FETBench™  
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY  
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY  
THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used here in:  
1. Life support devices or systems are devices or systems which, (a) are  
intended for surgical implant into the body or (b) support or sustain life,  
and (c) whose failure to perform when properly used in accordance with  
instructions for use provided in the labeling, can be reasonably  
expected to result in a significant injury of the user.  
2. A critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or  
effectiveness.  
ANTI-COUNTERFEITING POLICY  
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,  
www.Fairchildsemi.com, under Sales Support.  
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their  
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed  
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the  
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild  
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild  
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of  
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and  
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is  
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications  
may change in any manner without notice.  
Advance Information  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later  
date. Fairchild Semiconductor reserves the right to make changes at any time without  
notice to improve design.  
Preliminary  
First Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to  
make changes at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Full Production  
Datasheet contains specifications on a product that is discontinued by Fairchild  
Semiconductor. The datasheet is for reference information only.  
Not In Production  
Rev. I64  
www.fairchildsemi.com  
©2008 Fairchild Semiconductor Corporation  
FGH40N60SFD Rev.C0  
9

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