FGH50N3 [FAIRCHILD]
300V, PT N-Channel IGBT; 300V ， PT N沟道IGBT
| 型号： | FGH50N3 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 300V, PT N-Channel IGBT |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2002
FGH50N3
300V, PT N-Channel IGBT
General Description
Features
The FGH50N3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
• Low V
. . . . . . . . . . . . . . . . . . . < 1.4V max
CE(SAT)
• Low E
. . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ
OFF
• SCWT (@ T = 125°C). . . . . . . . . . . . . . . . . > 8µs
J
o
o
drop varies only moderately between 25 C and 150 C.
• 300V Switching SOA Capability
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for medium frequency switch mode power
supplies.
• Positive V
50A
Temperature Coefficient above
CE(SAT)
Formerly Developmental Type TA49485
Package
Symbol
E
C
C
G
TO-247
G
COLLECTOR
(FLANGE)
E
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
BV
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T = 25°C
Ratings
Units
300
V
A
A
A
V
V
CES
I
75
C25
C
I
Collector Current Continuous, T = 110°C
75
240
C110
C
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
CM
V
±20
GES
GEM
V
±30
SSOA
Switching Safe Operating Area at T = 150°C, Figure 2
150A at 300V
800
J
E
Single Pulse Avalanche Energy, I = 30A, L = 1.78mH, V = 50V
mJ
mJ
W
AS
CE
DD
E
Single Pulse Reverse Avalanche Energy, I = 30A, L = 1.78mH, V = 50V
800
ARV
EC
DD
P
Power Dissipation Total T = 25°C
463
D
C
Power Dissipation Derating T > 25°C
3.7
W/°C
°C
C
T
Operating Junction Temperature Range
Storage Junction Temperature Range
Short Circuit Withstand Time (Note 2)
-55 to 150
-55 to 150
8
J
T
°C
STG
t
µs
SC
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 180V, TJ = 125°C, VGE = 12Vdc, RG = 5Ω
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
Package Marking and Ordering Information
Device Marking
Device
Package
Tape Width
Quantity
FGH50N3
FGH50N3
TO-247
N/A
30
Electrical Characteristics T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
BV
Collector to Emitter Breakdown Voltage I = 250µA, V = 0V
300V
15V
-
-
-
-
-
-
-
-
V
V
CES
ECS
CE
GE
Emitter to Collector Breakdown Voltage I = 10mA, V = 0V
EC
GE
I
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
V
= 300V
= ± 20V
T = 25°C
250
2.0
±250
µA
mA
nA
CES
CE
J
T = 125°C
-
-
J
I
V
GES
GE
On State Characteristics
V
Collector to Emitter Saturation Voltage
I
V
= 30A
T = 25°C
-
-
1.30
1.25
1.4
1.4
V
V
CE(SAT)
CE
J
= 15V
GE
T = 125°C
J
Dynamic Characteristics
Q
Gate Charge
I
V
= 30A
V
V
= 15V
= 20V
-
-
180
228
4.8
7.0
-
-
nC
nC
V
G(ON)
CE
GE
= 150V
CE
GE
V
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I
I
= 250µA, V = V
4.0
-
5.5
-
GE(TH)
CE
CE
CE
GE
V
= 30A, V = 150V
V
GEP
CE
Switching Characteristics
SSOA
Switching SOA
T = 150°C, R = 5Ω,
150
-
-
A
J
G
V
= 15V , L = 25µH,
GE
Vce = 300V
t
Current Turn-On Delay Time
Current Rise Time
IGBT and Diode at T = 25°C,
-
-
-
-
-
-
-
-
-
-
-
-
20
15
-
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
d(ON)I
J
I
= 30A,
t
CE
-
-
rI
d(OFF)I
V
V
R
= 180V,
= 15V,
= 5Ω,
CE
GE
t
t
Current Turn-Off Delay Time
Current Fall Time
135
12
t
-
fI
G
E
E
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
130
92
-
ON2
OFF
L = 100µH,
Test Circuit - Figure 20
120
-
t
IGBT and Diode at T = 125°C,
19
d(ON)I
J
I
= 30A,
t
CE
13
-
rI
d(OFF)I
V
V
R
= 180V,
= 15V,
= 5Ω,
CE
GE
Current Turn-Off Delay Time
Current Fall Time
155
7
190
15
270
200
t
fI
G
E
E
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
225
135
ON2
OFF
L = 100µH,
Test Circuit - Figure 20
Thermal Characteristics
R
Thermal Resistance Junction-Case
TO-247
-
-
0.27
°C/W
θJC
NOTE:
1. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT.
J
The diode type is specified in figure 20.
2. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
OFF
the input pulse and ending at the point where the collector current equals zero (I = 0A). All devices were tested per
CE
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
Typical Performance Curves T = 25°C unless otherwise noted
J
200
160
120
80
175
150
125
100
75
o
V
= 15V
T = 150 C, R = 5Ω, V = 15V, L = 25µH
J G GE
GE
PACKAGE LIMITED
50
40
25
0
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
o
T
, CASE TEMPERATURE ( C)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
C
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
30
25
20
15
10
5
800
700
600
500
400
300
200
500
o
o
T
T
= 125 C, R = 5Ω, L = 100µH, V = 180V
V
= 180V, R = 5Ω, T = 125 C
J
G
CE
CE
G
J
400
300
o
75 C
C =
V
= 15V
t
I
SC
GE
SC
200
V
= 10V
GE
f
f
= 0.05 / (t
+ t
)
MAX1
d(OFF)I
d(ON)I
= (P - P ) / (E
+ E
)
MAX2
D
C
ON2
OFF
100
60
P
= CONDUCTION DISSIPATION
C
(DUTY FACTOR = 50%)
o
R
= 0.27 C/W, SEE NOTES
ØJC
0
2
10
20
100
9
10
V
11
12
13
14
15
16
I
, COLLECTOR TO EMITTER CURRENT (A)
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
60
60
DUTY CYCLE < 0.5%, V = 10V
GE
DUTY CYCLE < 0.5%, V = 15V
GE
PULSE DURATION = 250µs
PULSE DURATION = 250µs
50
40
30
20
10
0
50
40
30
20
10
0
o
o
T
= 25 C
J
T = 25 C
J
o
o
T
= 150 C
T
= 150 C
J
J
o
o
T
= 125 C
T = 125 C
J
J
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
0.25
0.5
V , COLLECTOR TO EMITTER VOLTAGE (V)
CE
0.75
1.0
1.25
1.5
1.75
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
Typical Performance Curves T = 25°C unless otherwise noted (Continued)
J
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
400
350
300
250
200
150
100
50
R
= 5Ω, L = 100µH, V = 180V
R
= 5Ω, L = 100µH, V = 180V
G
CE
G
CE
o
o
T
= 25 C, T = 125 C, V = 10V
J GE
J
o
T
= 125 C, V = 10V, V = 15V
J
GE
GE
o
o
o
T
= 25 C, V = 10V, V = 15V
T
= 25 C, T = 125 C, V = 15V
J
GE
GE
J
J
GE
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
35
100
R
= 5Ω, L = 100µH, V = 180V
R = 5Ω, L = 100µH, V = 180V
G CE
G
CE
80
60
40
20
0
30
25
20
15
o
o
T
= 25 C, T = 125 C, V = 10V
J GE
J
o
o
T
= 25 C, T = 125 C, V = 10V
J GE
J
o
o
T
= 25 C, T = 125 C, V = 15V
J GE
J
o
o
T
= 25 C, T = 125 C, V =15V
J
J
GE
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
170
24
R
= 5Ω, L = 100µH, V = 180V
R
= 5Ω, L = 100µH, V = 180V
G
CE
G
CE
160
150
140
130
120
110
100
20
16
12
8
o
o
T
= 25 C, T = 125 C, V = 15V
J GE
J
o
T
= 25 C, V = 10V, 15V
J
GE
o
T
= 125 C, V = 10V, 15V
GE
J
4
o
o
T
= 25 C, T = 125 C, V = 10V
J GE
J
0
0
10
20
30
40
50
60
0
10
I , COLLECTOR TO EMITTER CURRENT (A)
CE
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
Typical Performance Curves T = 25°C unless otherwise noted (Continued)
J
250
200
150
100
50
16
14
12
10
8
o
DUTY CYCLE < 0.5%, V = 10V
CE
I
= 1mA, R = 5Ω, T = 25 C
G(REF)
L
J
PULSE DURATION = 250µs
V
= 300V
CE
6
o
T
= 25 C
J
V
= 200V
CE
4
V
= 100V
50
CE
o
T
= 125 C
J
2
o
T
= -55 C
J
0
0
5
6
7
8
9
10
11
0
25
75
100
125
150
175
200
V
, GATE TO EMITTER VOLTAGE (V)
GE
Q
, GATE CHARGE (nC)
G
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
1.2
1.0
0.8
0.6
0.4
0.2
0
40
10
o
R
= 5Ω, L = 100µH, V = 180V, V = 15V
CE GE
G
T
= 125 C, L = 100µH, V = 180V, V = 15V
J
CE
GE
E
= E
+ E
TOTAL
ON2 OFF
ETOTAL = EON2 + EOFF
I
= 60A
CE
I
I
= 60A
= 30A
= 15A
CE
CE
I
I
= 30A
= 15A
CE
CE
1
I
CE
0.1
25
50
75
100
125
150
1
10
100
1000
o
T
, CASE TEMPERATURE ( C)
R
, GATE RESISTANCE (Ω)
C
G
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
10
3.5
DUTY CYCLE < 0.5%
o
FREQUENCY = 1MHz
PULSE DURATION = 250µs, T = 25 C
J
3.0
2.5
2.0
1.5
1.0
C
IES
I
= 60A
CE
C
OES
1.0
I
= 30A
CE
I
= 15A
CE
C
RES
0.1
0.05
0
10
20
30
40
50
60
70
80
90 100
6
7
8
9
10
11
12
13
14
15
16
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
Typical Performance Curves T = 25°C unless otherwise noted (Continued)
J
0
10
0.50
0.20
t
1
0.10
0.05
P
D
-1
10
10
t
2
DUTY FACTOR, D = t / t
1
2
0.02
0.01
PEAK T = (P X Z
X R ) + T
J
D
θ
JC
θJC C
SINGLE PULSE
-2
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FFH30US30S
DIODE 49449
90%
OFF
10%
V
GE
E
ON2
E
L = 100µH
V
CE
R
= 5Ω
G
90%
10%
+
I
CE
t
t
FGH50N3
d(OFF)I
V
= 180V
rI
DD
t
fI
-
t
d(ON)I
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
Handling Precautions for IGBTs
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler’s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than TJM. td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/2.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 21. EON2 is the integral
of the instantaneous power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
5. Gate Voltage Rating - Never exceed the gate-
voltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
PACMAN
POP
Power247
PowerTrench
QFET
QS
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
FACT
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT Quiet Series
â
FAST
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
QT Optoelectronics TinyLogic
Quiet Series
RapidConfigure
RapidConnect
TruTranslation
UHC
UltraFET
MSXPro
OCX
â
OCXPro
OPTOLOGIC
Across the board. Around the world.
The Power Franchise
ProgrammableActive Droop
â
â
SILENT SWITCHER VCX
SMARTSTART
OPTOPLANAR
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NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
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