FGH50T65UPD [ONSEMI]
650V，50A，场截止沟槽 IGBT;
| 型号： | FGH50T65UPD |
| 厂家： | 
ONSEMI |
| 描述： | 650V，50A，场截止沟槽 IGBT 双极性晶体管 |
| 文件： | 总11页 (文件大小：513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年 1 月
FGH50T65UPD
650 V, 50 A 场截止沟道 IGBT
特性
概述
•
•
•
•
•
•
•
•
•
最大结温：TJ = 175°C
正温度系数，易于并联运行
高电流能力
飞兆半导体的新型场截止沟道 IGBT 系列产品采用创新型场截止
沟道 IGBT 技术，为光伏逆变器、 UPS、焊机和数码发电机等低
导通和开关损耗至关重要的应用提供了最佳性能。
低饱和电压：VCE(sat) = 1.65 V (Typ.) @ IC = 50 A
器件 100% 经过 ILM(2) 测试
高输入阻抗
应用
•
光伏逆变器、 UPS、焊机、数码发电机
紧密的参数分布
•
通信电源、 ESS
符合 RoHS 标准
短路耐用性 > 5 µs @25°C
E
C
G
C
G
集电极
(FLANGE)
E
绝对最大额定值
符号
VCES
说明
额定值
650
单位
V
集电极－发射极间电压
栅极－发射极间电压
瞬态栅极－发射极间电压
集电极电流
20
V
VGES
25
V
@ TC = 25°C
@ TC = 100°C
100
A
IC
50
A
集电极电流
ICM (1)
ILM (2)
IF
150
A
集电极脉冲电流
箝位感性负载电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
150
A
60
A
30
150
A
IFM(1)
PD
A
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
340
W
W
µs
°C
°C
°C
170
最大功耗
SCWT
TJ
5
短路耐受时间
-55 至 +175
-55 至 +175
300
工作结温
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
注意：
1: 重复额定值：脉宽受最大结温限制
2: Ic = 150 A, Vce = 400 V, Rg = 10 W
热性能
符号
RθJC(IGBT)
参数
典型值
最大值
单位
°C/W
°C/W
°C/W
0.44
1.2
40
结点 - 壳体的热阻
RθJC(Diode)
RθJA
结点 - 壳体的热阻
结至环境热阻
©2012 飞兆半导体公司
1
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FGH50T65UPD Rev. C2
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
数量
FGH50T65UPD
FGH50T65UPD
TO-247 A03
30
塑料管
不适用
不适用
IGBT 电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V, IC = 1 mA
VGE = 0 V, IC = 250 µA
650
V
集电极 - 发射极击穿电压
ΔBVCES
ΔΤJ
击穿温度系数电压
0.65
V/°C
ICES
IGES
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
250
μA
集电极切断电流
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 50 mA, VCE = VGE
4.0
6.0
7.5
2.3
V
V
G-E 阈值电压
I
C = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V,
C = 175oC
1.65
VCE(sat)
集电极 - 发射极间饱和电压
2.1
V
T
动态特性
Cies
3540
110
60
4710
146
90
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
32
59
41
77
ns
ns
导通延迟时间
上升时间
td(off)
tf
160
22
208
29
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 50 A,
R
G = 6.0 Ω, VGE = 15 V,
ns
感性负载， TC = 25°C
Eon
Eoff
Ets
2.7
0.74
3.44
29
3.5
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
0.96
4.46
td(on)
tr
td(off)
tf
72
ns
166
19
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 50 A,
R
G = 6.0 Ω, VGE = 15 V,
ns
感性负载， TC = 175°C
Eon
Eoff
Ets
3.5
1.2
4.7
mJ
mJ
mJ
µs
导通开关损耗
关断开关损耗
总开关损耗
短路耐受时间
TSC
VGE = 15 V, VCC =400 V,
5
R
G = 10 Ω
Qg
230
31
345
47
nC
nC
nC
总栅极电荷
V
V
CE = 400 V, IC = 50 A,
GE = 15 V
Qge
Qgc
栅极－发射极间电荷
栅极－集电极间电荷
130
195
©2012 飞兆半导体公司
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FGH50T65UPD Rev. C2
二极管电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
T
C = 25°C
TC = 175°C
2.1
1.78
46
2.7
VFM
IF = 30 A
V
二极管正向电压
Erec
trr
T
C = 175°C
C = 25°C
µJ
ns
反向恢复电能
T
41
53
二极管反向恢复时间
IF = 30 A, diF/dt = 200 A/μs
TC = 175°C
TC = 25°C
TC = 175°C
144
76
106
Qrr
nC
二极管反向恢复电荷
486
©2012 飞兆半导体公司
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FGH50T65UPD Rev. C2
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
150
150
TC = 25oC
12 V
TC = 175oC
20 V
15 V
15 V
20 V
120
90
60
30
0
120
90
60
30
0
12 V
10 V
10 V
VGE = 8 V
VGE = 8 V
0
2
4
6
8
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 饱和电压特性
图 4. 饱和电压与可变电流强度下壳温的关系
4
150
Common Emitter
VGE = 15 V
Common Emitter
VGE = 15 V
TC = 25oC
TC = 175oC
120
90
60
30
0
100 A
3
50 A
2
IC = 25 A
1
25
50
75
100
125
150
175
0
1
2
3
4
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
8
50 A
100 A
100 A
50 A
4
4
0
IC = 25 A
IC = 25 A
8
0
4
8
12
16
20
4
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2012 飞兆半导体公司
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FGH50T65UPD Rev. C2
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
30000
Common Emitter
TC = 25oC
200 V
Cies
12
300 V
VCC = 400 V
9
6
3
0
1000
Coes
Common Emitter
100
30
VGE = 0 V, f = 1 MHz
TC = 25oC
Cres
0
50
100
150
200
250
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
10000
1000
1000
tr
td(off)
100
100
td(on)
tf
Common Emitter
VCC = 400 V, VGE = 15 V
Common Emitter
VCC = 400 V, VGE = 15 V
10
1
10
1
IC = 50 A
TC = 25oC
TC = 175oC
IC = 50 A
TC = 25oC
TC = 175oC
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
1000
10
Eon
tr
100
Eoff
1
td(on)
Common Emitter
VCC = 400 V, VGE = 15 V
10
Common Emitter
VGE = 15 V, RG = 6 Ω,Vcc = 400 V
IC = 50 A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
1
20
0.1
40
60
80
100
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
©2012 飞兆半导体公司
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FGH50T65UPD Rev. C2
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
1000
100
td(off)
Eon
10
100
1
0.1
Eoff
Common Emitter
VGE = 15 V, RG = 6 Ω
TC = 25oC
TC = 175oC
10
tf
Common Emitter
VGE = 15 V, RG = 6 Ω, Vcc = 400 V
TC = 25oC
TC = 175oC
1
20
0.01
20
40
60
80
100
40
60
80
100
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
1000
150
VCC = 400 V
IcMAX (Pulsed)
load Current : peak of square wave
100
10
10 μs
100 μs
10 ms
120
90
60
30
0
1 ms
IcMAX
(Continuous)
TC = 100oC
DC Operation
1
Single Nonrepetitive
Pulse Tc = 25oC
Duty cycle : 50%
TC = 100oC
0.1
Curves must be derated
linearly with increase
in temperature
Powe Dissipation = 170 W
0.01
0.1
1
10
100
1000
1k
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
图 17. 正向特性
图 18. 反向恢复电流
10
200
TC = 25oC
TC = 175oC
100
10
0
8
200 A/μs
TC = 175oC
6
4
2
diF/dt = 100 A/μs
200 A/μs
TC = 75oC
TC = 25oC
diF/dt = 100 A/μs
0
10
20
30
40
50
60
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage, VF [V]
Forward Current, IF [A]
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FGH50T65UPD Rev. C2
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
250
600
TC = 25oC
TC = 25oC
TC = 175oC
TC = 175oC
500
200
200 A/μs
100 A/μs
400
300
200
100
0
150
100
50
diF/dt =200 A/μs
diF/dt = 100 A/μs
100 A/μs
200 A/μs
diF/dt =200 A/μs
diF/dt = 100 A/μs
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Forward Current, IF [A]
Forwad Current, IF [A]
图 21. IGBT 瞬态热阻抗
1
0.5
0.1
0.01
1E-3
0.2
0.1
0.05
0.02
0.01
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
10
1
0.5
0.2
0.1
PDM
0.1
0.01
0.05
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
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FGH50T65UPD Rev. C2
机械尺寸
图 23. TO-247, MOLDED, 3 LEAD, JEDEC VARIATION AB （有效）
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
尺寸单位为毫米
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FGH50T65UPD Rev. C2
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Rev. I66
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