FGP15N60UNDF [FAIRCHILD]
600V, 15A Short Circuit Rated IGBT; 600V ， 15A短路额定IGBT
| 型号： | FGP15N60UNDF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, 15A Short Circuit Rated IGBT |
| 文件： | 总9页 (文件大小：826K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2011
FGP15N60UNDF
600V, 15A
Short Circuit Rated IGBT
tm
Applications
•
Home appliance inverter-driven appplication
- Air Condtioner, Washing Machine, Refrigerator,
Dish Washer
Features
•
Industrial Inverter - Sewing Machine, CNC
•
•
•
•
•
Short circuit rated 10us
High current capability
High input impedance
Fast switching
General Description
RoHS compliant
Using advanced NPT IGBT Technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low power inverter-
driven applications where low-losses and short circuit rugged-
ness feature are essential.
C
G
G C E
TO-220
E
Absolute Maximum Ratings
Symbol
Description
Ratings
600
Units
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
CES
± 20
30
GES
o
@ T = 25 C
C
I
C
o
Collector Current
@ T = 100 C
15
C
o
I
I
Pulsed Collector Current
45
CM (1)
@ T = 25 C
C
o
Diode Forward Current
@ T = 25 C
15
A
C
F
o
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ T = 25 C
178
71
W
W
C
P
D
o
@ T = 100 C
C
o
T
-55 to +150
-55 to +150
C
J
o
T
C
stg
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.2, V =13.5V
GE
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.7
Units
o
R
R
R
(IGBT)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
C/W
θJC
θJC
θJA
o
(Diode)
2.3
C/W
o
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
62.5
C/W
©2011 Fairchild Semiconductor Corporation
FGP15N60UNDF Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Packaging
Type
Max Qty
per Box
Device Marking
Device
Package
Qty per Tube
FGP15N60UNDF
FGP15N60UNDF
TO220
Tube
50ea
-
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
V
V
V
= 0V, I = 250ꢀA
600
-
-
-
-
1
V
CES
CES
GES
GE
CE
GE
C
I
I
= V
, V = 0V
-
-
mA
ꢀA
CES
GES
GE
G-E Leakage Current
= V
, V = 0V
±10
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 15mA, V = V
GE
5.5
-
6.8
2.2
8.5
2.7
V
V
GE(th)
C
C
C
CE
= 15A, V = 15V
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 15A, V = 15V,
GE
-
2.7
-
V
o
T
= 125 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
619
80
-
-
-
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
24
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.3
9.8
-
ns
ns
d(on)
-
r
Turn-Off Delay Time
Fall Time
54.8
9.9
-
ns
d(off)
f
V
R
= 400V, I = 15A,
= 10ꢁ, V = 15V,
GE
CC C
G
12.8
ns
o
Inductive Load, T = 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.37
0.067
0.44
8.9
-
-
-
-
-
-
-
-
-
-
mJ
mJ
mJ
ns
on
off
ts
t
t
t
t
d(on)
r
9.9
ns
Turn-Off Delay Time
Fall Time
56.6
13.2
0.54
0.11
0.65
ns
d(off)
f
V
= 400V, I = 15A,
= 10ꢁ, V = 15V,
GE
CC C
R
G
ns
o
Inductive Load, T = 125 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
mJ
mJ
mJ
on
off
ts
V
= 350V,
CC
T
Short Circuit Withstand Time
R
T
= 100ꢁ, V = 15V,
= 150 C
10
-
-
ꢀs
sc
G
C
GE
o
2
www.fairchildsemi.com
FGP15N60UNDF Rev. A
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Q
Q
Q
Total Gate Charge
-
-
-
43
6
-
-
-
nC
nC
nC
g
V
V
= 400V, I = 15A,
= 15V
CE
GE
C
Gate to Emitter Charge
Gate to Collector Charge
ge
gc
26
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max Units
o
T
= 25 C
-
-
-
-
-
-
1.6
1.5
2.2
C
V
Diode Forward Voltage
I = 15A
F
V
FM
o
T = 125 C
-
C
o
T
= 25 C
82.4
142
213
541
C
t
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
rr
o
T = 125 C
-
C
I =15A, dI /dt = 200A/ꢀs
F
F
o
T
= 25 C
-
C
Q
nC
rr
o
T = 125 C
-
C
3
www.fairchildsemi.com
FGP15N60UNDF Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
80
80
TC = 25oC
TC = 125oC
17V
20V
20V
17V
15V
70
15V
70
60
50
40
30
20
10
0
60
50
VGE =12V
40
30
20
10
0
VGE = 12V
0.0
1.5
3.0
4.5
6.0
7.5
9.0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
80
80
Common Emitter
Common Emitter
VGE = 15V
TC = 25oC
70
VCE = 20V
TC = 25oC
TC = 125oC
70
60
50
40
30
20
10
0
60
TC = 125oC
50
40
30
20
10
0
0
1
2
3
4
5
6
0
3
6
9
12
15
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
TC = 25oC
Common Emitter
VGE = 15V
16
30A
12
15A
8
15A
30A
4
0
IC = 7.5A
IC = 7.5A
8
25
50
75
100
125
4
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGP15N60UNDF Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
3000
Common Emitter
TC = 25oC
Cies
1000
16
Coes
12
8
Cres
100
15A
Common Emitter
VGE = 0V, f = 1MHz
30A
4
IC = 7.5A
TC = 25oC
10
0
4
8
12
16
20
1
10
30
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
100
15
200V
10ꢀs
12
9
400V
10
VCC = 100V
100ꢀs
1ms
1
10 ms
DC
6
Single Nonrepetitive
0.1
o
Pulse T = 25 C
C
3
Curves must be derated
linearly with increase
in temperature
Common Emitter
TC = 25oC
0.01
0
1
10
100
1000
0
5
10 15 20 25 30 35 40 45 50
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Gate Resistance
1000
50
Common Emitter
40
30
VCC = 400V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
td(off)
20
100
tr
Common Emitter
td(on)
VCC = 400V, VGE = 15V
10
5
IC = 15A
TC = 25oC
TC = 125oC
tf
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Gate Resistance, RG [ꢁ]
Gate Resistance, RG [ꢁ]
5
www.fairchildsemi.com
FGP15N60UNDF Rev. A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 14. Turn-off Characteristics vs.
Collector Current
Collector Current
50
300
Common Emitter
VGE = 15V, RG = 10ꢁ
TC = 25oC
TC = 125oC
100
td(off)
10
td(on)
Common Emitter
VGE = 15V, RG = 10ꢁ
tf
tr
TC = 25oC
TC = 125oC
10
1
5
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
CollectorCurrent
1000
3000
Eon
Eon
1000
Eoff
Eoff
100
Common Emitter
VCC = 400V, VGE = 15V
100
Common Emitter
VGE = 15V, RG = 10ꢁ
TC = 25oC
TC = 125oC
IC = 15A
TC = 25oC
TC = 125oC
10
10
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
Gate Resistance, RG [ꢁ]
Collector Current, IC [A]
Figure 17. Turn off Switching
SOA Characteristics
Figure 18. Forward Characteristics
100
30
10
TJ = 75oC
TJ = 25oC
TJ = 125oC
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1
1
10
100
1000
0
1
2
3
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGP15N60UNDF Rev. A
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
100
0.7
TC = 25oC
TC = 125oC
TJ = 125oC
0.6
10
200A/ꢀs
0.5
0.4
0.3
0.2
0.1
0.0
1
TJ = 75oC
0.1
di/dt = 100A/ꢀs
200A/ꢀs
TJ = 25oC
0.01
di/dt = 100A/ꢀs
1E-3
50
200
400
600
0
2
4
6
8
10 12 14 16 18 20
Reverse Voltage, VR [V]
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
200
TC = 25oC
di/dt = 100A/ꢀs
TC = 125oC
150
100
50
200A/ꢀs
di/dt = 100A/ꢀs
200A/ꢀs
0
0
2
4
6
8
10 12 14 16 18 20
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
t1
0.01
t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
1 10
Rectangular Pulse Duration [sec]
7
www.fairchildsemi.com
FGP15N60UNDF Rev. A
Mechanical Dimensions
TO-220
8
www.fairchildsemi.com
FGP15N60UNDF Rev. A
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™
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Saving our world, 1mW/W/kW at a time™
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SMART START™
Solutions for Your Success™
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TranSiC®
TriFault Detect™
TRUECURRENT®*
ꢀSerDes™
MicroPak™
MicroPak2™
MillerDrive™
®
STEALTH™
UHC®
Ultra FRFET™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I58
FGP15N60UNDF Rev. A
9
www.fairchildsemi.com
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